• Membrane Journal
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• v.25 no.1
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• pp.42-47
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• 2015

In this study, PEBAX[poly(ether-block-amide)]-NaY zeolite composite membranes were prepared, and those prepared membranes were studied on permeability of $C_3H_6$ and $C_3H_8$, and selectivity ($C_3H_6/C_3H_8$). NaY zeolite particles in PEBAX-NaY zeolite composite membranes was dispersed as aggregated particles with the size $0.5{\sim}2.5{\mu}m$ by SEM observation. TGA measurement showed the weight loss change resulted from the amount of NaY zeolite when NaY zeolite was added into PEBAX. By gas permeation experiment, the permeabilities of $C_3H_6$ and $C_3H_8$ were decreased by the more addition NaY zeolite in PEBAX. Overall, $C_3H_6$ was having higher permeability than $C_3H_8$. The selectivity $C_3H_6/C_3H_8$ was decreased by the more NaY zeolite in PEBAX.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.569-573
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• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.135-139
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• 2004

The layered organic-inorganic hybrid compounds($C_6H_5CH_2NH_3)_2CuCl_4$ and ($NH_3C_6/H_4C_2H_4_6/H_4NH_3)CuCl_4$ have been directly synthesized. From the X-ray diffraction data and the organic guest size, the orientation of the intercalated organic amine was determined. The inorganic sheets consist of $CuCl_4^{2-}$layers of comer-sharing octahedra copper chloride. The protonated organic amine was intercalated into the $CuCl_4^{2-}$layers with bilayer structure for ($C_6H_5CH_2NH_3)_2CuCl_4$ and monolayer structure for ($NH_3C_6/H_4C_2H_4_6/H_4NH_3)CuCl_4$.

• Membrane Journal
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• v.24 no.6
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• pp.423-430
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• 2014

PTMSP/LDH composite membranes were prepared by adding 0, 1, 3, and 5 wt% LDH contents to PTMSP. The gas permeability and selectivity for $H_2$, $N_2$, $CH_4$, $C_3H_8$, $n-C_4H_{10}$ were investigated as a function of LDH content. As LDH content of PTMSP/LDH composite membranes increased to 5 wt%, the gas permeability for $H_2$ and $N_2$ gradually decreased, while $n-C_4H_{10}$ permeability rapidly increased. The gas permeability for $CH_4$ and $C_3H_8$ was found to decrease for the membranes with LDH content range of 0~3 wt%, however increase in the range of 3~5 wt%. As LDH content of PTMSP/LDH composite membranes increased to 5 wt%, the selectivity of membranes gradually increased for $H_2$, $N_2$, $CH_4$, $C_3H_8$, $n-C_4H_{10}$ over $H_2$, $N_2$. However the selectivity for $C_3H_8$ and $n-C_4H_{10}$ over $CH_4$ increased in the range of LDH content 0~3 wt% but decreased in the range of 3~5 wt%. The $CH_4$ and $n-C_4H_{10}$ selectivity over $H_2$ and $N_2$ increased as $CH_4$ and $n-C_4H_{10}$ permeability increased. The $n-C_4H_{10}$ selectivity over $CH_4$ increased with increasing $n-C_4H_{10}$ permeability up to 182,000 barrer and decreased above 182,000 barrer of $n-C_4H_{10}$ permeability. The $C_3H_8$ selectivity over $H_2$ and $N_2$ was found to decrease as the $C_3H_8$ permeability increased from 46,000 to 50,000 barrer, but to increase with increasing permeability from 50,000 to 52,300 barrer and decrease again with increasing permeability from 52,300 to 60,000 barrer. The $C_3H_8$ selectivity over $CH_4$ was found to decrease with increasing $C_3H_8$ permeability up to 52,300 barrer but increase above 52,300 barrer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.640-644
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• 1998

We have fabricated Sb/SiC(4H) Schottky barrier diode (SBD) of which characteristics compared with that of Ti/SiC(4H) SBD. The donor concentration of the n-type SiC(4H) obtained by capacitance-voltage (C-V) measurement was about $2.5{\times}10 ^{17}{\textrm}cm^{-3}$. The ideality factors of 1.31 was obtained from the slope of forward current-voltage (I-V) characteristics of Sb/SiC(4H) SBD at low current density. The breakdown field of Sb/SiC(4H) SBD under the reverse bias voltage was about $4.4{\times}10^2V$/cm. The built-in potential and the Schottky barrier height (SBH) of Sb/SiC(4H) SBD were 1.70V and 1.82V, respectively, which were determined by the analysis of C-V characteristics. The Sb/SiC(4H) SBH of 1.82V was higher than Ti/SiC(4H) SBH of 0.91V. However, the current density and reverse breakdown field of Sb/SiC(4H) were low as compared with those of Ti/SiC(4H). The Sb/SiC(4H), as well as the Ti/SiC(4H), can be utilized as the Shottky barrier contact for the high-power electronic device.

• Korean Journal of Crystallography
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• v.11 no.1
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• pp.46-51
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• 2000

The molecular structures of 2-SC₄H₃CH=NN(H)C/sub 6/H/sub 5/(C/sub 11/H/sub 10/N₂S) and (GaMe₂)₂(2-SC₄H₃CH=NNC/sub 6/H/sub 5/)₂(C/sub 26/H/sub 30/Ga₂N₄S₂) have been determined by X-ray diffraction. Crystallographic data for 2-SC₄H₃CH=NN(H)C/sub 6/H/sub 5/:orthorhombic space group P2₁2₁2₁, a=6.108(1)Å, b=7.593(1)Å, c=22.356(2)Å, V=1037.1(3)ų, Z=4, R=0.0613. Crystallographic data for (GaMe₂)₂(2-SC₄H₃CH=NNC/sub 6/H/sub 5/)₂:monoclinic space group P2₁/n, a=15.996(2) Å, c=9.879(3)Å, β=100.07.(2)°, V=2764.599)ų, Z=4, R=0.0503.

• Journal of the Korean Chemical Society
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• v.11 no.3
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• pp.94-99
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• 1967

The interactions of iodobenzene with iodine, iodine monobromide, iodine monochloride and chlorine in carbon tetrachloride solution have been investigated by means of ultraviolet spectrophotometric measurements. The results reveal the formation of one to one molecular complexes, $C_6H_5I{\cdot}I_2$, $C_6H_5I{\cdot}IBr$, $C_6H_5I{\cdot}ICl$, and $C_6H_5I{\cdot}Cl_2$, in solution. The equilibrium constants obtained at room temperature (about $21^{\circ}C$) for the formation of these four complexes are 0.23, 0.73, 1.2 and 0.070 l $mole^{-1}$, respectively. Comparison of these results with those reported in the literature on other complexes of similar type indicates that the relative stabilities of these complexes decrease in the following orders: ICl>IBr>$I_2$>$Br_2$>$Cl_2$ $C_6H_5I$>$C_6H_6$>$C_6H_5Br$>$C_6H_5Cl$>$C_6H_5F$.

• Korean journal of food and cookery science
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• v.28 no.3
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• pp.249-255
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• 2012

The objectives of this study were to evaluate the physicochemical characteristics of puffer fish under storage conditions. Free amino acids were identified in the order of taurine > alanine > lysine > leucine > glutamic acid > valine. Glutamic acid, lysine, histidine, arginine, proline, and aspartic acid increased over time and with increased temperature, and valine and tyrosine were affected by temperature. ATP decreased dramatically during 36 h of storage at $4^{\circ}C$, 24 h of storage at $12^{\circ}C$, and 16 h of storage at $20^{\circ}C$. IMP reached its highest level when puffer fish was stored for 36 h at 4 and $12^{\circ}C$ and 24 h at $20^{\circ}C$, and hypoxanthine levels grew steeply at 60 h at $4^{\circ}C$, 24 h at $12^{\circ}C$ and 20 h at $20^{\circ}C$. In terms of K value, the puffer fish was available for sliced raw fish within 60 h at $4^{\circ}C$, 24 h at $12^{\circ}C$ and 12 h at $20^{\circ}C$, and the fish can be taken in after cooking within 72 h at $4^{\circ}C$ and $12^{\circ}C$ and 36 h at $20^{\circ}C$. The physicochemical quality characteristics showed that puffer fish is available for sliced raw fish within 36 h at $4^{\circ}C$, 16 h at $12^{\circ}C$ and 12 h at $20^{\circ}C$, and that the fish can be taken after cooking within 72 h at $4^{\circ}C$ and $12^{\circ}C$ and 36 h at $20^{\circ}C$.

• Membrane Journal
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• v.24 no.4
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• pp.259-267
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• 2014

PEBAX[poly(ether-block-amide)-ZIF-8(zeolitic imidazolate framework) composite membranes were prepared with different amounts of ZIF-8; 0, 1, 3, 7, 10, and 20 wt%. Gas permeation experiment were performed by varying the temperature of 25, 35, $40^{\circ}C$ under condition $6kgf/cm^2$. Gas permeability of $C_3H_6$, $C_3H_8$ and selectivity ($C_3H_6/C_3H_8$) were investigated by increasing the amount of ZIF-8 in the PEBAX. The gas permeability of $C_3H_6$ and $C_3H_8$ increased as ZIF-8 content increased among 0 to 7 wt% range and decreased among 7 to 20 wt% range. When the ZIF contents of PEBAX-ZIF composite membrane were 7 wt%, the selectivity ($C_3H_6/C_3H_8$) was taken between 3.6 and 3.8 value and also had the lowest activation energy.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..