• Electrical & Electronic Materials
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• v.9 no.4
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• Journal of Conservation Science
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• v.28 no.3
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• pp.247-256
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• 2012

Amber has been used as gemstones and artifacts from the period of the Three Kingdoms or earlier, which are discovered in the process of excavation now. It is, however, very difficult to discuss the importing route and circulation of amber because there are no informations available on the provenance. In this study, we acquired the IR spectra of ambers originating from 5 different locations. We also monitored the change of characteristic IR peaks by artificially aging the ambers under heat, light and heat with oxygen, respectively. As the aging proceeded, the intensity of C=O band and O-H band increased, however, the bands related with C=C bond decreased. There needed some modifications in the discerning scheme because some peak disappeared with aging; yet, it was still possible to discern different ambers largely. Therefore, it is expected that the scheme can be used practically by appraising its applicability to the real amber relics excavated.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.4
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• pp.988-996
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• 1998

BN ceramics with 0.07wt% $V_{2}O_{5}$ and 0.03wt% CuO(BNC3V7) sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. Dielectricconstant of 44.3, TCF of 22 ppm$/^{\circ}C$ and $Qxf_{o}$ value of 22,000 GHz can be obtained from BNC3V7, multilayer type band pass filters using tapped method and conventional method were designed for PCS (Personal Communication System) applications. Tapped method by adopting input/output-tapping scheme the chip filter stucture becomes simpler and needs fewer layers than that using the conventional input/output-coupling scheme. A multilayer type band pass filter fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at $900^{\circ}C$ were compared with the designed ones. Even though the centered frequencies of tapped and conventional band pass chaip filters were measured to shift about 90MHz downward, the band pass characteristics of both filters were similar that of designed ones. The spuriousresonance characteristic of tapped pass chip filter was better than that of conventional chip filer.

• Journal of the Korea Institute of Military Science and Technology
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• v.24 no.1
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• pp.107-114
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• 2021

By analyzing the voice communication performance of the existing tactical FM radios, the performance target of the newly developing TICN combat network radio system VHF band tactical voice communication waveform was derived. In addition, a vocoder and modulation method that can satisfy the performance target and additional requirements are presented, and the expected voice communication quality is analyzed.

• Journal of IKEEE
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• v.22 no.4
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• pp.1202-1205
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• 2018

In this paper, we proposed ggNMOS based on 4H-SiC material and analyzed its electrical characteristics. 4H-SiC is a wide band-gap meterial, which is superior in area contrast and high voltage characteristics to Si material, and is attracting attention in the power semiconductor field. The proposed device has high robustness and strong snapback characteristics. The process consisted of SiC process and electrical characteristics were analyzed by TLP measurement equipment.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.9
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• pp.414-420
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• 2005

A method for partial discharge diagnosis based on UHF narrow band type for GIS has been developed and calibrated. In generally, PD cannot be directly measured under on-line condition, but we can indirectly measure the electromagnetic wave made by PD using the high-frequency antenna. Compared with VHF band, electromagnetic waves of UHF band have a low influence for external noise in high-voltage substation. Therefore, we can detect the real abnormality with several pC in GIS using UHF narrow-band type method. For the case of no internal VHF sensor for GIS of the domestic substation, it has applied to use the external UHF sensor attached in spacer in GIS of existing substation. In this paper, we firstly described the technique of partial discharge measurement using frequency analysis and phase analysis in UHF band. Secondly, we presented the results of sensitivity test, the relationship of dBm-pC and diagnosis result of the cause of PD source by phase analysis. And then, we report the diagnosis result of partial discharge on the real GIS in domestic substation. These results make above method applicable for measurement of quantity and cause of PD for real operation GIS in high-voltage substation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39A no.12
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• pp.691-698
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• 2014

An L-band single side band(SSB) mixer with CMOS switches and a C-band quadrature voltage-controlled oscillator(QVCO) have been developed using the TowerJazz 0.18-um RFCMOS process. The SSB mixer exhibits a conversion gain of 6.6 ~ 7.5 dB with a 70-dBc image rejection ratio and 65-dBc port isolation. The oscillation frequency range of the QVCO is 6.2 ~ 6.7 GHz with an output power of 4~6 dBm. For measurement, 1.8 V supply voltage is used while drawing 36 mA for the mixer and 23 mA for the QVCO.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.7A
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• pp.712-718
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• 2004

We report 1.6 Tb/s (160${\times}$10 Gb/s) WDM transmission over 2,000 km of single mode fiber using distributed hybrid(distributed Raman amplifier＋Erbium-doped fiber amplifier) optical amplifiers. After transmission over 2,000 km of single mode fiber, average optical signal to noise ratios of C/L-band were 20.5 dB, 21.9 dB, respectively. The minimum Q-factors of each band were 14.65 dB (BER=5.8e-8) in C-band, 13.75 dB (BER=5.0e-7) in L-band without forward error correction. We performed 1.6 Tb/s error-free transmission over 2,000 km of single mode fiber using Reed-Solomon (255, 239) forward error correction code.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.196-200
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• 2005

A 40 channel arrayed-waveguide grating (AWG) filter operating in C-band and L-band wavelength regions has been fabricated using PLC (Planar Lightwave Circuit) processes with 0.75 refractive index difference. Its design was optimized for matching the center wavelength with the ITU-recommended wavelength. The characteristics of the fabricated C-band AWG are as follows; average insertion loss < 2.5 dB, polarization-dependent loss < 0.3 dB, non-adjacent crosstalk >35dB, and the loss uniformity of 0.8 dB. In the L-band AWG, wavelength accuracy is below 0.02nm.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.2
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• pp.53-58
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• 2004

In this paper, the low-phase dual-band VCO, by adding switching circuit with PIN diode at feedback loop of the oscillation part having negative-resistance, is realized. In order to reduce the phase noise of the VCO, PBG structure applied to the ground plane of the resonator. When applying for PBG structure, output power is -9.17㏈m and phase noise is -102㏈c/Hz at 5.25㎓, output power is -5.17㏈m and phase noise is -101㏈c/Hz at 1.8㎓, respectively.