• Korean Journal of Materials Research
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• v.24 no.5
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• pp.266-270
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• 2014

Aluminum nitride(AlN) films were grown on the C-face and on the Si-face of (0001) silicon carbide(SiC) substrates using plasma-assisted molecular-beam epitaxy(PA-MBE). This study was focused on first-stage growth manipulation prior to the start of AlN growth. Al pre-exposure, N-plasma pre-exposure, and simultaneous exposure(Al and N-plasma) procedures were used in the investigation. In addition, substrate polarity and, first-stage growth manipulation strongly affected the growth and properties of the AlN films. Al pre-exposure on the C-face and on the Si-face of SiC substrates prior to initiation of the AlN growth resulted in the formation of hexagonal hillocks on the surface. However, crack formation was observed on the C-face of SiC substrates without Al pre-exposure. X-ray rocking-curve measurements revealed that the AlN epilayers grown on the Si-face of the SiC showed relatively lower tilt and twist mosaic than did the epilayers grown on the C-face of the SiC. The results from the investigations reported in this paper indicate that the growth conditions on the Si-face of the SiC without Al pre-exposure was highly preferred to obtain the overall high-quality AlN epilayers formed using PA-MBE.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.457-461
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Fire Science and Engineering
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• v.30 no.6
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• pp.31-36
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• 2016

The flash point is one of the most important properties for characterizing the fire and explosion hazard of liquid solutions. In this study, the flash points of two flammable binary mixtures, n-pentanol + n-propanol and n-pentanol + n-heptanol systems were measured using a Seta flash closed cup tester. The flash point was estimated using the methods based on Raoult's law and multiple regression analysis. The measured flash points were also compared with the predicted flash points. The absolute average errors (AAE) of the results calculated by Raout's law were $1.3^{\circ}C$ and $1.3^{\circ}C$ for the n-pentanol + n-propanol and n-pentanol + n-heptanol mixtures, respectively. The absolute average errors of the results calculated by multiple regression analysis were $0.4^{\circ}C$ and $0.3^{\circ}C$ for the n-pentanol + n-propanol and n-pentanol + n-heptanol mixtures, respectively. According to the AAE, the calculated values based on multiple regression analysis were better than those based on Raoult's law.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.197-200
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• 2001

반응성 스퍼터링법으로 TaN film을 증착한 후 열처리온도에 따라 TaN 박막의 $R_s$(sheet resistance) 특성을 평가하고 미세구조 변화에 따른 전기적 특성 변화를 고찰하였다. TaN 박막을 열처리한 결과 $400^{\circ}C$에서 $600^{\circ}C$까지는 (110)의 회절피크만 보이다가 $700^{\circ}C$ 에서는 (200)의 회절 피크가 나타났고 특히 as-deposition 상태와 $300^{\circ}C$ 열처리시에는 Ta와 TaN 상이 혼재한 상태로 나타났으며 전기저항 변화는 as-deposition 상태가 $140{\Omega}/{\square}$로 가장 높았으며 열처리 온도가 증가함에 따라 저항은 점차적으로 감소하다가 $600^{\circ}C$와 $700^{\circ}C$에서는 전기저항이 다시 증가하였다. $500^{\circ}C$까지는 표면 형상이나 표면조도보다는 열처리 온도의 증가에 따른 TaN 박막의 결정구조 변화가 전기저항에 영향을 주는 주 요인으로 작용하고, $600^{\circ}C$와 $700^{\circ}C$ 열처리시에 결정립의 증가에도 불구하고 전기저항이 증가하는 것은 고온 열처리에 의한 표면조도가 증가하였기 때문이라고 생각된다.

• Korean Journal of Metals and Materials
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• v.50 no.11
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• pp.839-845
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• 2012

The effect of an AlN additive on the thermoelectric properties of SiC ceramics was studied. Porous SiC ceramics with 48-54% relative density were fabricated by sintering the pressed ${\alpha}-SiC$ powder compacts with AlN at $2100-2200^{\circ}C$ for 3 h in an Ar atmosphere. In the undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder. With AlN addition, the reverse phase transformation of 6H-SiC to 4H-SiC was observed during the sintering process. The electrical conductivity of the AlN doped specimen was larger than that of the undoped specimen under the same conditions, which might be due to a reverse phase trans-formation. The Seebeck coefficient of the AlN doped specimen was also larger than that of the undoped specimen. The density of specimen and the amount of addition had significant effects on the thermoelectric properties.

• Journal of Environmental Science International
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• v.28 no.9
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• pp.719-727
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• 2019

In this study, the effect on the stability of Aerobic Granular Sludge (AGS) with different Carbon/Nitrogen (C/N) ratios was investigated. The C/N ratios were controlled to 10.0, 7.5, 5.0, and 2.5 using the sequencing batch reactor, and the results showed that the removal efficiency of organic matter and total nitrogen decreased simultaneously with the decrease of C/N ratio. The removal efficiency of organic matter and total nitrogen at C/N ratio of 2.5 was 70.7% and 52.3% respectively. In addition, the AGS/mixed liquor suspended solids (MLSS) ratio showed a tendency to decrease from 85.7% to 73.7%, while the sludge volume index showed a tendency to increase from 82 mL/g to 102 mL/g as the C/N ratio decreased. At the same time, the apparent deviation of polysaccharide (PS) content in extracellular polymeric substances was observed, and polysaccharides/protein (PS/PN) ratio decreased from 0.62 to 0.31 as the C/N ratio decreased. Optical microscope observations showed that the reduction in C/N ratio caused the growth of filamentous bacteria and significantly affected the stability of AGS.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.192.2-192.2
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• 2015

본 논문에서는 사파이어 기판 표면에 레이저 처리를 통해 격자 구조(레이저 격자 구조)를 제작하고 InGaN/GaN 발광다이오드(Light-Emitting Diodes, LED) 박막을 성장 한 시료에서 Bowing 특성 변화를 논의한다. 그리고 Bowing 정도에 따른 InGaN/GaN LED의 광학 및 전기적 특성을 Photoluminescence (PL)와 Electroluminescence (EL) Mapping 법을 이용하여 상호 비교 분석하였다. 2-인치 사파이어 기판 상에 레이저 격자 구조의 간격은 1 mm (GS1-LED), 2 mm (GS2-LED), 3 mm (GS3-LED) 로 제작하였으며, 격자 구조가 없는 LED를 기준 시료(C-LED)로 사용하였다. GS1-LED, GS2-LED, GS3-LED의 Bowing 정도는 C-LED 대비 각각 8%, 7.6%, 6.4% 감소하였다. PL Mapping 결과, GS-LED의 발광 파장의 분포 균일도가 C-LED 보다 개선되는 것을 확인하였고, 파장이 C-LED 대비 단파장으로 이동하였다. 또한, GS-LED시료의 PL 강도는 C-LED보다 증가하였고, 특히 GS2-LED의 PL 강도는 C-LED 대비 6.9% 증가 하였다. EL mapping 결과, GS-LED 발광 파장의 분포 균일도는 PL 결과와 유사하게 측정되었으며, 2인치 기판 전체 면적에 대한 GS-LED의 주요 동작전압 및 출력 전력 수율이 C-LED대비 현저히 개선되었다. 사파이어 기판 표면에 제작한 레이저 격자 구조에 따른 InGaN/GaN LED의 광학적, 전기적 특성을 Bowing의 개선과 응력 완화 현상으로 논의 할 예정이다.

• Applied Chemistry for Engineering
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• v.5 no.4
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• pp.706-713
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• 1994

Isothermal vapor-Liquid equilibrium data have been measured for binary systems MTBE-methanol, MTBE-n-heptane, and methanol-n-heptane at $45^{\circ}C$ and $65^{\circ}C$ by using head space gas chromato-graphy (H.S.G.C). Among these systems a minimum azeotrope was observed in both of MTBE-methanol system and n-heptane-methanol system. Particularly n-heptane-methanol system has a heterogeneous minimum azotrope since it has an immisible region. These equilibrium data were correlated with the excess Gibbs energy model, and the thermodynamic consistency test was also carried out by using Redlich-Kister equation.

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.27-35
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• 1995

The crystal structure of 1-tert-butoxycarbonyl-4-[N-(tert-butoxycarbonyl)-N-(ethoxycarbonylmethyl)amino]-3-phenylsulfonylpyrrolidind [C24H36O8N2S] has been from single crystal x-ray diffraction study ; C24H36O8N2S triclinic, p1, a=11.363(8)Å, b=11.589(6)Å, c=11.013(10)Å,α=95.32(6)°,β=98.64(7)°,γ=79.57(5)°,V=1406.8(18)Å3, t=293K, Z=2, CuKα(λ=1.5418Å). The molecular structure was solved by diredt method and refined by full-matrix least squares to a final R=9.78% for 3621 unique observed [F≥4σ(F)] reflections and 703 paramenters.

• Journal of the Korean Mathematical Society
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• v.56 no.5
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• pp.1333-1354
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• 2019

In authors' paper in 2007, it was shown that the BSE-extension of $C^1_0(R)$, the algebra of continuously differentiable functions f on the real number space R such that f and df /dx vanish at infinity, is the Lipschitz algebra $Lip_1(R)$. This paper extends this result to the case of $C^n_0(R^d)$ and $C^{n-1,1}_b(R^d)$, where n and d represent arbitrary natural numbers. Here $C^n_0(R^d)$ is the space of all n-times continuously differentiable functions f on $R^d$ whose k-times derivatives are vanishing at infinity for k = 0, ${\cdots}$, n, and $C^{n-1,1}_b(R^d)$ is the space of all (n - 1)-times continuously differentiable functions on $R^d$ whose k-times derivatives are bounded for k = 0, ${\cdots}$, n - 1, and (n - 1)-times derivatives are Lipschitz. As a byproduct of our investigation we obtain an important result that $C^{n-1,1}_b(R^d)$ has a predual.