• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.606-610
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• 2007

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC thin films, in which they were deposited on the oxidized Si substrate by APCVD method according to growth temperature. Since the phonon modes were not measured for $0.4{\mu}m$ thick 3C-SiC, $2.0{\mu}m$ thick 3C-SiC deposited on the oxidized Si at $1180^{\circ}C$, in which TO (transverse optical mode) and LO (longitudinal optical mode) phonon modes were appeared at 794.4 and $965.7cm^{-1}$, respectively. The broad FWHM (full width half maximum) can explain that the crystallinity of 3C-SiC deposited at $1180^{\circ}C$ becomes polycrystalline instead of disorder crystal. Additionally, the ratio of intensity $I_{LO}/I_{TO}{\approx}1.0$ of 3C-SiC indicates that the crystal disorder of $3C-SiC/SiO_2/Si$ is small. Compared poly $3C-SiC/SiO_2$ with $SiO_2/Si$ interfaces, $1122.6cm^{-1}$ phonon mode was measured which may belong to C-O bonding and two phonon modes, 1355.8 and $1596.8cm^{-1}$ related to D and G bands of C-C bonding in the Raman range of 200 to $2000cm^{-1}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.197-198
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• 2009

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2004년도 학술대회지
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• pp.380-385
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• 2004

The efficiency of complex slurry preparation route for developing the high performance SiC matrix of RS-SiCf/SiC composites has been investigated. The green bodies for RS-SiC materials prior to the infiltration of nw/ten silicon were prepared with various C/SiC complex matrix slurries, which associated with both different sizes of starting SiC particles and blending ratios of starting SiC and carbon particles. The characterization of RS-SiC materials was examined by means of SEM, TEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, process optimization methodology is also discussed. The flexural strength of RS-SiC materials greatly depended on the content of residual Si. The decrease of starting SiC particle size in the C/SiC complex slurry was effective for improving the flexural strength of RS-SiC materials.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.234-238
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• 2008

The efficiency of fiber reinforced CMC(ceramic matrix composite) on the SiC materials have been investigated, in conjunction with the fabrication process by liquid phase sintering and the characterization. LPS-$SiC_f$/SiC composites was studied with the detailed analysis such as the microstructure, sintered density, flexural strength and fracture behavior. The applicability of carbon interfacial layer has been also investigated in the LPS process. Submicron SiC powder with the constant total amount and composition ratio of $Al_2O_3,\;Y_2O_3$ as sintering additives was used in order to promote the performance of the SiC matrix material. LPS-$SiC_f$/SiC composites were fabricated with hot press under the sintering temperature and applied pressure of $1820^{\circ}C$ and 20MPa for 1hr. The typical property of monolithic LPS-SiC materials was compared with LPS-$SiC_f$/SiC composites.

• 한국세라믹학회지
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• 제29권8호
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• pp.587-592
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• 1992

Sheets of SiC-SiC whisker maxed matrix were prepared from the mixed slurry of SiC whisker and SiC matrix by the rolling method. With the increase of SiC whisker, the pore size, the porosity and the phosphoric acid absorbency of the matrix were increased, while the bubble pressure was decreased. The activation energy for the transfer of H+ ion was decreased with the increase of mixing ratio of SiC whisker to the SiC matrix from the measurement of hydrogen ion conductivity. The activation energy was evaluated as 0.25 eV when the mixing ratio of SiC whisker to the SiC matrix was 1 : 2 and the activation energy was 0.16 eV for the 2 : 1 matrix. It means that SiC whisker matrix contributes to attain a better microstructure for the diffusion of hydrogen ion. From the measurement of single cell performance of matrix with various mixing ratio, it is concluded that if SiC-SiC whisker maxed matrix has a sufficient bubble pressure to prevent the crossover of H2 gas, the current density of a fuel cell is increased with the increase of acid absorbency of the matrix. Current density was improved from 140 mA/$\textrm{cm}^2$ for 0.25 mm thickness of matrix to 170 mA/$\textrm{cm}^2$ for the 0.20 mm one at 700 mV.

• Nuclear Engineering and Technology
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• 제45권4호
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• pp.565-572
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• 2013

The fabrication methods and requirements of the fiber, interphase, and matrix of nuclear grade $SiC_f/SiC$ composites are briefly reviewed. A CVI-processed $SiC_f/SiC$ composite with a PyC or $(PyC-SiC)_n$ interphase utilizing Hi-Nicalon Type S or Tyranno SA3 fiber is currently the best combination in terms of the irradiation performance. We also describe important material issues for the application of SiC composites to LWR fuel cladding. The kinetics of the SiC corrosion under LWR conditions needs to be clarified to confirm the possibility of a burn-up extension and the cost-benefit effect of the SiC composite cladding. In addition, the development of end-plug joining technology and fission products retention capability of the ceramic composite tube would be key challenges for the successful application of SiC composite cladding.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.454-459
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• 2003

We investigate the structure and properties of SiC (Silicon Carbide) nanotubes using molecular dynamics simulation based on the Tersoff bond-order potential. For small diameter tubes, the Si-C bond distance of SiC nanotubes decreases as the nanotube diameter is decreased, due to curvature of the nanotube surface. We find that Young's modulus of SiC nanotubes is somewhat smaller than that of the other nanotubes considered so far. However, Young's modulus for SiC nanotubes is larger than that of ${\beta}$-SiC and almost equal to the experimental value for SiC nanorod and SiC whisker. The strain energy of the SiC nanotubes is also lower than that of the other nanotubes. The lower strain energy of SiC nanotubes raises the possibility of synthesis of SiC nanotubes.

• 한국세라믹학회지
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• 제45권4호
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• pp.204-207
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• 2008

This paper presents a new process for producing SiC fiber-SiC matrix(SiC/SiC) composites by reaction sintering. The processing strategy for the fabrication of the SiC/SiC composites involves the following: (1) infiltration of the SiC fiber fabric using a slurry consisting of Si and C precursors, (2) stacking the slurry-infiltrated SiC fiber fabric at room temperature, (3) cross-linking the stacked composites, (4) pyrolysis of the stacked composites, and (5) hot-pressing of the pyrolyzed composites. It was possible to obtain dense SiC/SiC composites with relative densities of >96% and a typical flexural strength of ${\sim}400$ MPa.

• 전기전자학회논문지
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• 제26권1호
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• pp.111-118
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• 2022

본 논문에서는 고전압 SiC Power 소자와 집적이 가능한 4H-SiC CMOS에 대해 연구하였다. SiC CMOS 소자 연구를 통해 고출력 SiC Power 소자와 함께 제작을 가능하게 함으로써 SiC 전력소자를 이용하는 고출력 시스템의 효율 및 비용면에서 우수한 성능을 기대할 수 있다. 따라서 4H-SiC 기판에서 CMOS를 설계한 후 TCAD 시뮬레이션을 통해 전기적 특성 및 고온 동작 신뢰성을 비교하였다. 특히 높은 온도에서 신뢰성 있는 동작을 위해 gate dielectric으로 HfO₂를 변경함으로써 SiO₂보다 열적 특성이 개선됨을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.199-200
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• 2009

This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at $1200^{\circ}C$ with hexamethyldisilane (HMDS: $Si_2$ $(CH_3)_6)$ as a single precursor and 0 ~ 100 sccm of $N_2$ as the dopant source gas. The peaks of the SiC (111) and the Si-C bonding were observed for the poly 3C-SiC thin films grown on $SiO_2/Si$ substrates by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses, respectively. The resistivity of the poly 3C-SiC thin films decreased from $8.35\;{\Omega}{\cdot}cm$ for $N_2$ of 0 sccm to $0.014\;{\Omega}{\cdot}cm$ with $N_2$ of 100 sccm. The carrier concentration of the poly 3C-SiC films increased with doping from $3.0819\;{\times}\;10^{17}$ to $2.2994\;{\times}\;10^{19}\;cm^{-3}$, and their electronic mobilities increased from 2.433 to $29.299\;cm^2/V{\cdot}S$.