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http://dx.doi.org/10.4313/JKEM.2003.16.6.454

A Study on the Properties of SiC Nanotubes: Molecular Dynamics Simulation  

문원하 (중앙대학교 전자전기공학부)
함정국 (중앙대학교 전자전기공학부)
황호정 (중앙대학교 전자전기공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.6, 2003 , pp. 454-459 More about this Journal
Abstract
We investigate the structure and properties of SiC (Silicon Carbide) nanotubes using molecular dynamics simulation based on the Tersoff bond-order potential. For small diameter tubes, the Si-C bond distance of SiC nanotubes decreases as the nanotube diameter is decreased, due to curvature of the nanotube surface. We find that Young's modulus of SiC nanotubes is somewhat smaller than that of the other nanotubes considered so far. However, Young's modulus for SiC nanotubes is larger than that of ${\beta}$-SiC and almost equal to the experimental value for SiC nanorod and SiC whisker. The strain energy of the SiC nanotubes is also lower than that of the other nanotubes. The lower strain energy of SiC nanotubes raises the possibility of synthesis of SiC nanotubes.
Keywords
SiC nanotubes; Molecular Dynamics; Young's modulus; Strain energy;
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Times Cited By KSCI : 2  (Citation Analysis)
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