• 제목/요약/키워드: C$_3$A

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다결정 3C-SiC 마이크로 공진기 제작과 그 특성 (Fabrication and characterization of polycrystalline 3C-SiC mocro-resonators)

  • 이태원;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.250-250
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    • 2008
  • This paper describes the resonant characteristics of polycrystalline SiC micro resonators. The $1{\mu}m$ thick polycrystalline 3C-SiC cantilevers with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at room temperature. For the 100 ~ $40{\mu}m$ long cantilevers, the fundamental frequency appeared at 147.2 kHz - 856.3 kHz. The $100{\mu}m$ and $80{\mu}m$ long cantilevers have second mode resonant frequency at 857.5 kHz and 1.14 MHz. Therefore, polycrystalline 3C-SiC micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

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다공성 3C-SiC 기반 저항식 수소센서의 제작과 그 특성 (Fabrication of a Porous 3C-SiC Based Resistivity Hydrogen Sensor and Its Characteristics)

  • 김강산;정귀상
    • 센서학회지
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    • 제20권3호
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    • pp.168-171
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    • 2011
  • Porous 3C-SiC(pSiC) samples with different pore diameters were prepared from poly crystalline N-type 3C-SiC by electrochemical anodization. The pSiC surface was chemically modified by the sputtering of Pd and Pt nano-particles as a hydrogen catalyst. Changes in resistance were monitored with hydrogen concentrations in the range of 110 ppm - 410 ppm. The variations of the electrical resistance in the presence of hydrogen demonstrated that Pd and Pt-deposited pSiC samples have the ability to detect hydrogen at room temperature. Regardless of the catalyst, the 25 nm pore diameter samples showed good response and recovery properties. However, the 60 nm samples showed unstable and slow response. It was found that the pore size affects the catalyst reaction and consequently, results in changes of the sensitivity to hydrogen.

SiC 소결에 미치는 Al2O3-RE2O3 첨가제의 영향과 SiCf/SiC 복합체의 제조 (Effects of Al2O3-RE2O3 Additive for the Sintering of SiC and the Fabrication of SiCf/SiC Composites)

  • 유현우;카티 라주;박지연;윤당혁
    • 한국세라믹학회지
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    • 제50권6호
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    • pp.364-371
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    • 2013
  • The sintering behavior of monolithic SiC is examined using the binary sintering additive of $Al_2O_3$-rare earth oxide ($RE_2O_3$, where RE = Sc, Nd, Dy, Ho, or Yb). Through hot pressing at 20 MPa and $1750^{\circ}C$ for 1 h in an Ar atmosphere for 52 nm fine ${\beta}$-SiC powder added with 5 wt% sintering additive, a SiC density of > 97% is achieved, which indicates the effectiveness of $Al_2O_3-RE_2O_3$ system as a sintering of additive for SiC. Based on this result, 7 wt% of $Al_2O_3-Sc_2O_3$ is tested as an additive system for the fabrication of a continuous SiC fiber-reinforced SiC-matrix composite ($SiC_f$/SiC). Electrophoretic deposition combined with the application of ultrasonic pulses is used to efficiently infiltrate the matrix phase into the voids of $Tyranno^{TM}$-SA3 fabric. After hot pressing, a composite density of > 97% is obtained, along with a maximum flexural strength of 443 MPa.

Enzymatic Characterization and Comparison of Two Steroid Hydroxylases CYP154C3-1 and CYP154C3-2 from Streptomyces Species

  • Subedi, Pradeep;Kim, Ki-Hwa;Hong, Young-Soo;Lee, Joo-Ho;Oh, Tae-Jin
    • Journal of Microbiology and Biotechnology
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    • 제31권3호
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    • pp.464-474
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    • 2021
  • Bacterial cytochrome P450 (CYP) enzymes are responsible for the hydroxylation of diverse endogenous substances with a heme molecule used as a cofactor. This study characterized two CYP154C3 proteins from Streptomyces sp. W2061 (CYP154C3-1) and Streptomyces sp. KCCM40643 (CYP154C3-2). The enzymatic activity assays of both CYPs conducted using heterologous redox partners' putidaredoxin and putidaredoxin reductase showed substrate flexibility with different steroids and exhibited interesting product formation patterns. The enzymatic characterization revealed good activity over a pH range of 7.0 to 7.8 and the optimal temperature range for activity was 30 to 37℃. The major product was the C16-hydroxylated product and the kinetic profiles and patterns of the generated hydroxylated products differed between the two enzymes. Both enzymes showed a higher affinity toward progesterone, with CYP154C3-1 demonstrating slightly higher activity than CYP154C3-2 for most of the substrates. Oxidizing agents (diacetoxyiodo) benzene (PIDA) and hydrogen peroxide (H2O2) were also utilized to actively support the redox reactions, with optimum conversion achieved at concentrations of 3 mM and 65 mM, respectively. The oxidizing agents affected the product distribution, influencing the type and selectivity of the CYP-catalyzed reaction. Additionally, CYP154C3s also catalyzed the C-C bond cleavage of steroids. Therefore, CYP154C3s may be a good candidate for the production of modified steroids for various biological uses.

구조방정식 모형을 이용한 사이버진로상담 활성화 영향요인에 관한 연구 (A Study on the Factors affecting Cyber-Career-Counseling-Activation based on Structural Equation Model(SEM))

  • 이영자;백현기
    • 디지털콘텐츠학회 논문지
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    • 제9권3호
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    • pp.379-388
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    • 2008
  • 본 논문은 사이버진로상담 활성화(C-C-C-A)의 개념을 재정의 하고 경기지역 인문계 고등학교 수준에서 사이버 상담활성화 영향요인들의 효과를 검정하는데 있다. 이 연구에서, 연구자는 독립변인으로서 3개의 요인들이 <사이버진로상담 활성화>를 증진시킬 것이라는 가정을 하고 있다. 본 가설을 논의하기 위해, AMOS 5.0 프로그램을 사용하여, 2007년 12월, 사이버진로상담 경험자 322명의 학생자료를 분석하였다. 3개의 핵심요소가 사이버진로상담 활성화에 미치는 영향요인을 측정하기 위한 문항들의 신뢰도 검사를 위해서는 탐색적 요인분석이, 사이버 진로상담활성화모형 타당도와 적합도 검정을 위해서는 확인적 요인분석이 시행되었다. 그 결과들은 다음과 같다: 첫째, 3개의 요인들(상담기회 확대, 상담서비스 내실화, 상담서비스체제구축)은 사이버 진로상담 활성화를 증가시킨다. 둘째, 확정요인분석결과로 나타난 적합도 지수들(GFI AGFI, CFI, RMSEA)의 양호함은 사이버진로상담 활성화모형의 통계적 유의미성과 적합도를 증명해 주고 있다. 그러므로, 3개의 선택된 요소들은 사이버진로상담 활성화 모형을 구성하는 유의미한 요소들이라고 말할 수 있다.

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다결정 3C-SiC 마이크로 공진기의 특성 (Characteristics of polycrystalline 3C-SiC micro resonator)

  • 이태원;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.69-70
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    • 2008
  • Micro resonators have been actively investigated for bio/chemical sensors and RF M/NEMS devices. Among various materials, SiC is a very promising material for micro/nano resonators since the ratio of its Young's modulus, E, to mass density, $\rho$, is significantly higher than other semiconductor materials, such as, Si and GaAs. Polycrystalline 3C-SiC cantilever with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and its fundamental resonance was measured by a laser vibrometer in air and vacuum at room temperature, respectively. For the cantilever with $100{\mu}m$ length, $10{\mu}m$width and $1.3{\mu}m$ thickness, the fundamental frequency appeared at 147.2 kHz.

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Moieties of Complement iC3b Recognized by the I-domain of Integrin αXβ2

  • Choi, Jeongsuk;Buyannemekh, Dolgorsuren;Nham, Sang-Uk
    • Molecules and Cells
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    • 제43권12호
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    • pp.1023-1034
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    • 2020
  • Complement fragment iC3b serves as a major opsonin for facilitating phagocytosis via its interaction with complement receptors CR3 and CR4, also known by their leukocyte integrin family names, αMβ2 and αXβ2, respectively. Although there is general agreement that iC3b binds to the αM and αX I-domains of the respective β2-integrins, much less is known regarding the regions of iC3b contributing to the αX I-domain binding. In this study, using recombinant αX I-domain, as well as recombinant fragments of iC3b as candidate binding partners, we have identified two distinct binding moieties of iC3b for the αX I-domain. They are the C3 convertase-generated N-terminal segment of the C3b α'-chain (α'NT) and the factor I cleavage-generated N-terminal segment in the CUBf region of α-chain. Additionally, we have found that the CUBf segment is a novel binding moiety of iC3b for the αM I-domain. The CUBf segment shows about a 2-fold higher binding activity than the α'NT for αX I-domain. We also have shown the involvement of crucial acidic residues on the iC3b side of the interface and basic residues on the I-domain side.

폐 SiC 슬러지를 이용하여 제조한 연속다공질 SiC-Si3N4 복합체의 미세조직 (Microstructures Of Continuously Porous SiC-Si3N4 Composites Fabricated Using Waste SiC Sludge)

  • ;이희정;장희동;이병택
    • 한국재료학회지
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    • 제15권3호
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    • pp.177-182
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    • 2005
  • Large amounts of the waste SiC sludge containing small amounts of Si and organic lubricant were produced during the wire cutting process of the single silicon crystal ingots. The waste SiC sludge was purified by the washing process and the purified SiC powders were used to fabricate continuously porous $SiC-Si_3N_4$ composites using a fibrous monolithic process, in which carbon, $6wt\%\;Y_2O_3-2\;wt\%\;A1_2O_3$ and ethylene vinyl acetate were added as a pore-forming agent, sintering additives, and binder, respectively. In the burning-out process, carbon was fully removed and continuously porous $SiC-Si_3N_4$ composites were successfully fabricated. The green bodies containing SiC, Si particles and sintering additives were nitrided at $1410^{\circ}C$ in a flowing $N_2+10\%\;H_2$ gas mixture. Continuously porous composites were combined with SiC, ${\alpha}Si_3N_4,\;\beta-Si_3N_4$ and a few $\%$ of Fe phases. The pore size of the 2nd and the 3rd passed $SiC-Si_3N_4$ composites was $260\;{\mu}m$ and $35\;{\mu}m$ in diameter, respectively.

Si(100) 기판위에 성장된 3C-SiC의 RIE 특성 (Reactive ion Etching Characteristics of 3C-SiC Grown on Si(100) Wafers)

  • 정수용;우형순;진동우;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.892-895
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    • 2003
  • This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. During RIE of 3C-SiC films in this work, $CHF_3$ gas is used to form of polymer as a side wall for excellent anisotropy etching. From this process, etch rates are obtained a $60{\sim}980{\AA}/min$ by various conditions such as $CHF_3$ gas flux, $O_2$ addition ratio, RF power and electrode distance. Also, approximately $40^{\circ}$ mesa structures are successfully formed at 100 mTorr $CHF_3$ gas flow ratio, 200 W RF power and 30 mm electrode distance. Moreover, vertical side wall is fabricated by anisotropy etching with 50% $O_2$ addition ratio and 25 mm electrode distance. Therefore, RIE of 3C-SiC films using $CHF_3$ could be applicable as fabrication process technology for high-temperature 3C-SiC MEMS applications.

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$^{13}$C NMR Study of the Application of the 'Tool of Increasing Electron Demand' to the 9-Aryl-tricyclo[3.3.1.0$^{2,8}$]non-9-yl, and 8-Aryl-Tetracyclo[3.2.1.0$^{2,7}$.0$^{4,6}$]oct-8-yl cations

  • Wie-Chang Jin;Gweon-Young Ryu;Chun Yoon;Shin Jung Hyu
    • Bulletin of the Korean Chemical Society
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    • 제10권6호
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    • pp.591-595
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    • 1989
  • The$^{13}C$ NMR shifts of a series of para-substituted 9-aryl-tricyclo$[3.3.1.0^{2,8}]$non-9-yl and 8-aryl-tetracyclo$[3.2.1.0^{2,7}.0^{4,6}]$-oct-8-yl cations were measured in $FSO_3H/SO_2ClF \;at\; -90^{\circ}C\; or\; -70^{\circ}C$ in order to examine whether the ${\rho}^{c+}$ values can be used to explain the mechanism for the stabilization of the geometrically rigid cyclopropylcarbinyl cations. Plots of the ${\Delta}{\delta}^{c+}$ shifts against ${\sigma}^{c+}$ reveal excellent linear correlation. The tricyclononyl systems yield a ${\rho}^{c+}$ value of -4.95 with a correlation coefficient r = 0.9948. The tetracyclo-octanyl systems give a ${\rho}^{c+}$ value of -6.39 with r = 0.9943. A fair parallelism exists between the results of $^{19}F$ nmr studies and the change of ${\rho}^{c+}$ values in these cations. Accordingly, the present study established that the ${\rho}^{c+}$ value can be used as a mearsure of the geometric influence for the charge delocalization in cyclopropylcarbinyl cations.