Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07b
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- Pages.892-895
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- 2003
Reactive ion Etching Characteristics of 3C-SiC Grown on Si(100) Wafers
Si(100) 기판위에 성장된 3C-SiC의 RIE 특성
- Jung, Soo-Yong (School of Information System Eng., Dongseo Univ.) ;
- Woo, Hyung-Soon (School of Information System Eng., Dongseo Univ.) ;
- Jin, Dong-Woo (School of Information System Eng., Dongseo Univ.) ;
- Chung, Gwiy-Sang (School of Information System Eng., Dongseo Univ.)
- Published : 2003.07.10
Abstract
This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. During RIE of 3C-SiC films in this work,