• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.1
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• pp.15-18
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• 2003

The characteristics of accelerated soft error rate (ASER) for fabricated 8M SRAM are evaluated for various well structures. The application of the Buried NWell (BNW) and the variations of each well structure, well dose in process conditions are checked by ASER failure in time (FIT) in terms of reliability. The application of only the BNW shows the lowest ASER FIT value. The BNW added to the Buried PWell (BPW) shows a 200% increase and the BNW plus the Striped BPW (SBPW) shows a 100% increase compared to applying the BNW. The cases of applying SBPW show very high ASER FIT.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.3
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• pp.111-115
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• 2006

We investigated accelerated soft error rate(ASER) in 8M static random access memory(SRAM) cells. The effects on ASER by well structure, operational voltage, and cell transistor threshold voltage are examined. The ASER decreased exponentially with respect to operational voltage. The chips with buried nwell1 layer showed lower ASER than those either with normal well structure or with buried nwell1 + buried pwell structure. The ASER decreased as the ion implantation energy onto buried nwell1 changed from 1.5 MeV to 1.0 MeV. The lower viscosity of the capping layer also revealed lower ASER value. The decrease in the threshold voltage of driver or load transistor in SRAM cells caused the increase in the transistor on-current, resulting in lower ASER value. We confirmed that in order to obtain low ASER SRAM cells, it is necessary to also the buried nwell1 structure scheme and to fabricate the cell transistors with low threshold voltage and high on-current.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.109-109
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• 1997

• Geomechanics and Engineering
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• v.3 no.3
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• pp.169-188
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• 2011

Response of buried flexible pipe-soil system is studied, through numerical analysis, with respect to deflection and buckling in a spatially varying soil media. In numerical modeling procedure, soil parameters are modeled as two-dimensional non-Gaussian homogeneous random field using Cholesky decomposition technique. Numerical analysis is performed using random field theory combined with finite difference numerical code FLAC 5.0 (2D). Monte Carlo simulations are performed to obtain the statistics, i.e., mean and variance of deflection and circumferential (buckling) stresses of buried flexible pipe-soil system in a spatially varying soil media. Results are compared and discussed in the light of available analytical solutions as well as conventional numerical procedures in which soil parameters are considered as uniformly constant. The statistical information obtained from Monte Carlo simulations is further utilized for the reliability analysis of buried flexible pipe-soil system with respect to deflection and buckling. The results of the reliability analysis clearly demonstrate the influence of extent of variation and spatial correlation structure of soil parameters on the performance assessment of buried flexible pipe-soil systems, which is not well captured in conventional procedures.

• Journal of Power System Engineering
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• v.17 no.1
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• pp.36-41
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• 2013

A study of the possible axisymmetric modes that propagate at low frequencies in buried, water-filled pipes is presented. It is well known that for a vacuum-pipe-vacuum system the sole non-torsional axisymmetric mode that exists at low frequencies is the fundamental L(0,1) mode. When a pipe is filled with water and still surrounded by a vacuum it is also known that another mode then appears which at low frequencies is characterized by predominantly axial water-borne displacements. In addition to these modes. this paper explores two other, less well known axisymmetric modes whose exitence depends on the acoustic properties of the outer medium that surrounds a pipe. The predicted characteristics of these modes are presented and the likelihood of them propagating over any significant distance in a buried water pipe is discussed.

• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.173-176
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• 2001

Several dielectric as well as conducting cylinders buried in the lossy half space are reconstructed from the scattered fields measured along the interface between the air and the lossy ground. Iterative inversion method by using the hybrid optimization algorithm combining the genetic and the Levenberg-Marquardt algorithm enables us to find the positions, the sizes, and the medium parameters such as the permittivities and the conductivities of the buried cylinders as well as those of the background lossy half space. Illposedness of the inversion caused by the errors in the measured scattered fields are regularized by filtering the evanescent modes of the scattered fields out.

• Journal of Power System Engineering
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• v.10 no.1
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• pp.65-70
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• 2006

A study of the possible axisymmetric modes that propagate at low frequencies in buried, water-filled iron pipes is presented. It is well known that for a vacuum-pipe-vacuum system the sole non-torsional axisymmetric mode that exists at low frequencies is the fundamental L(0,1) mode. When a pipe is filled with water and still surrounded by a vacuum it is also known that another mode then appears which at low frequencies is characterized by predominantly axial water-borne displacements. In addition to these modes, this paper explores two other, less well known axisymmetric modes whose existence depends on the acoustic properties of the outer medium that surrounds a pipe. In this paper the predicted characteristics of these modes are presented.

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.86-87
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• 1999

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.669-673
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• 2003

We fabricated a buried-ridge waveguide laser diode (B-RWG LD) which has more advantages for obtaining lateral single mode operation on the same ridge width and for the planarization of the device surface, compared to the conventional RWG LD. In this LD, the difference of the lateral effective refractive index can be controlled by the thickness of the InGaAsP layer which is grown on the active and the p-InP layers. The InGaAsP multiple quantum well was grown on a n-InP substrate by the CBE. The buried ridge structure was formed by selective wet etchings, followed by liquid phase epitaxy methods. The fabricated LD with the ridge width of 7 ${\mu}{\textrm}{m}$ showed a linear increase of the optical power up to 20 ㎽ without any kinks and a saturated output power of more than 80 ㎽. By measuring the far field pattern, we demonstrate that LDs with the ridge widths of 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$ were operated in a lateral single mode up to 2.7I$_{th}$ and 2.4I$_{th}$, respectively.ely.