• Journal of Sensor Science and Technology
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• v.19 no.4
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• pp.328-335
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• 2010

We have designed and fabricated an active pixel sensor(APS) using an optimized n-well/gate-tied p-channel metal oxide semiconductor field effect transistor(PMOSFET)-type photodetector with a built-in transfer gate. This photodetector has a floating gate connected to n-well and a built-in transfer gate. The photodetector has been optimized by changing the length of the transfer gate. The APS has been fabricated using a 0.35 ${\mu}m$ standard complementary metal oxide semiconductor(CMOS) process. It was confirmed that the proposed APS has a wider dynamic range than the APS using the previously proposed photodetector and a higher sensitivity than the conventional APS using a p-n junction photodiode.

• Journal of Sensor Science and Technology
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• v.23 no.4
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• pp.284-289
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• 2014

In this paper, modeling of a gate/body-tied (GBT) PMOSFET photodetector with built-in transfer gate is performed. It can control the photocurrent with a high-sensitivity. The GBT photodetector is a hybrid device consisted of a MOSFET, a lateral BJT, and a vertical BJT. This device allows for amplifying the photocurrent gain by $10^3$ due to the GBT structure. However, the operating parameters of this photodetector, including its photocurrent and transfer characteristics, were not known because modeling has not yet been performed. The sophisticated model of GBT photodetector using a process simulator is not compatible with circuit simulator. For this reason, we have performed SPICE modeling of the photodetector with reduced complexity using Cadence's Spectre program. The proposed modeling has been demonstrated by measuring fabricated chip by using 0.35 im 2-poly 4-metal standard CMOS technology.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.12-15
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• 2022

In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a built-in transfer gate was designed and fabricated via a 0.18-㎛ standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.114-118
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• 2021

In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 ㎛ complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.39 no.5
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• pp.613-621
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• 2019

In general, transfer in subway stations is defined as transfer between lines and station transfer. In transfer between lines, passengers change from one subway line to another by utilizing horizontal pedestrian facilities such as transfer passages and pedestrian way. Station transfer appears in the situation that subway lines of enter and exit gate terminals differs from those of boarding and alighting trains and passenger trips utilize both vertical pedestrian facilities such as stair and escalator and horizontal facilities. The hypothesis on these two transfers presupposes that all subway lines are operated by either local train or express in subway network. This means that in a transfer case both local and express trains are operated in the same subway line, as a case of Seoul Metro Line 9, has not been studied. This research proposes a methodology of finding the same line transfer in the Seoul metropolitan subway network built based on the smart card network data by suggesting expanded network concept and a model that passengers choose a theirs minimum time routes.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.359-362
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• 2010

In this study, inverter logic circuits on a plastic substrate are built with two top-gate FETs in series on a single ZnO nanowire. The voltage transfer characteristics of the ZnO nanowire-based inverter logic circuit exhibit a clear inverting operation. The logic swing, gain and transition width of the inverter logic circuit is about 90 %, 1.03 and 1.2 V, respectively. The result of mechanical bending cycles of the inverter logic circuit on a plastic substrate shows that the stable performance is maintained even after many hundreds of bending cycles.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.1
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• pp.73-80
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• 2016

The preliminary test for the dual mode plasma torch system was carried out to explore the operation properties in advance. The dual mode plasma torch system that is able to operate in transferred, non-transferred, or dual mode is very adequate for melting the mixed wastes including nonconductive materials such as concrete, asbestos, etc. since it exploits both the high efficiency of heat transfer to the melt in transferred mode and stable operation in non-transferred mode. Also, system operation including restarting is reliable and very easy. A stationary melter with a refractory structure was designed and manufactured considering the melting behavior of slags to minimize the refractory erosion. The power supply for the dual mode plasma torch system built with high power insulated gate bipolar transistor (IGBT) modules has functions for both current control and voltage control and is sufficient to suppress the harmonics during the operation of the plasma torch. The power supply provides two different voltages for transferred operation and non-transferred. It is confirmed that the operation voltage in transferred is always higher than non-transferred. The dual mode plasma torch system was successfully developed and is under operation for a melting experiment to optimize operation data.

• Journal of Power Electronics
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• v.8 no.4
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• pp.363-370
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• 2008

In this paper, three kinds of PWM strategies for a three-phase current-fed dc/dc converter are proposed and compared in terms of losses and voltage transfer ratio. Each PWM strategy is described graphically and their switching losses are analyzed. With the proposed PWM C strategy, one turn-off switching of each bridge switch is eliminated to reduce switching losses under the same switching frequency. In addition, RMS current through the bridge switches is lowered by using parallel connection between two bridge switches and thus, conduction losses of the switches are reduced. Further, copper losses of the transformer are decreased due to the reduced RMS current of each transformer's winding. Therefore, total losses are minimized and the efficiency of the converter is improved by using the proposed PWM C strategy. Digital signal processor (DSP: TI320LF2407) and a field-programmable gate array (FPGA: EPM7128) board are used to generate PWM patterns for three-phase bridge and clamp MOSFETs. A 500W prototype converter is built and its experimental results verify the validity of the proposed PWM strategies.

• Journal of Korean Society of Water and Wastewater
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• v.25 no.6
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• pp.869-875
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• 2011

Ministry of Environment has been promoting BTL business of the sewer rehabilitation which continues from 2005 up to now. Sewer rehabilitation is classified into three parts : wastewater pipe rehabilitation, rainwater pipe rehabilitation and drainage equipment rehabilitation. Drainage equipment rehabilitation is that drainage pipe connects wastewater pipe directly without water-purifier. In the drainage equipment construction, it is inevitable to have the damage of ground structures(wall, gate and U drain, etc) when an open excavation method is used. Therefore it is necessary to develop non-excavation method to connect drainage pipe and wastewater pipe like jacking method to avoid the damage of ground structure. This paper has conducted an analysis of the non-excavation method using a boring machine attached to backhoe, which is issued the verification certificate of environmental technology according to the Development of and Support for Environmental Technology Act, article.7. The index set in this analysis was sectionalized to the condition of construction, the grade of drainage pipe, the size of excavated hole, the amount of waste cement concrete and asphalt concrete and the benefit effect compared to open excavation method.