• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.303-307
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• 2007

This paper investigated the effect of the pad buffing process on the material removal characteristics and pad stabilization during silicon chemical mechanical polishing. The pads surface were controlled by the buffing process using a buffer made by the sandpaper. The buffing process is based on abrasive machining by using a high speed sandpaper. The controlled pad by the buffing process show less deformation deviation and stable material removal rate during the CMP process. In addition, the controlled pad ensure better uniformity of removal rate than comparative pads. As a result of monitoring, the controlled pad by the buffing process demonstrated constant and stable friction force signals from initial polishing stage. Therefore, the tufting process could control the pad surface to be uniform and improve the performance of the polishing pad.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1880-1884
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• 2008

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-steop CMP consists of Cu CMP and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the buffing is performed various conditions as a cleaning process. The buffing process combined mechanical cleaning by friction between a wafer and a buffing pad and chemical cleaning by buffing solution consists of tetramethyl ammonium hydroxide (TMAH)/benzotriazole(BTA).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.17-21
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• 2011

Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.609-613
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• 2004

On this study, electrochemical polishing is adapted to ultra-fine surface for semiconductor large radius gas-tube. The system which buffing and electrochemical polishing can be performed simultaneously was constructed in connection with developing exclusive system. Based on existing papers and the research of background, electrode gap and electrolyte flow were fixed. Current density and electrochemical precision time were chosen as variables. On this study, it is objected to find optimal precision condition and precision variables on the in-process electrochemical polishing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.537-537
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• 2008

Copper (Cu) has been widely used for interconnection structure in intergrated circuits because of its properties such as a low resistance and high resistance to electromigration compared with aluminuim. Damascene processing for the interconnection structure utilizes 2-steps chemical mechanical polishing(CMP). After polishing, the removal of abrasive particles on the surfaces becomes as important as the polishing process. In the paper, buffing process for the removal of colloidal silica from polished Cu wafer was proposed and demonstrated.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.1-8
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• 2008

We propose how to program the off-line buffing robot path along shoes' outsole shape in the footwear buffing process by a 5-axis microscribe system like robot mechanism. The microscribe system we developed consists of a 5-axis robot link with a turn table, a signal processing unit, PC and an application software program. Itmakes a robot path on the shoes' upper in accordance with the movement of a microscribe with many joints. The developed system calculates the encoder pulse values for the microscribe arm's rotation and transmits the angle pulse values to the PC through a processing unit. Denavit-Hartenberg's(D-H) direct kinematics is used to make the global coordinate from microscribe joint one. Problems with the microscribe's kinematics can be solved efficiently and systematically by D-H representation. With the coordinate values calculated by D-H equation, our system can draw a buffing gauge-line on the upper sole. We obtain shoes' outline points, which are 2 outlines coupled with the points and the normal vector based on the points. By applying the system to the buffing robot in a flexible manufacturing system, it can be used effectively to program the path of a real buffing robot.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.366-367
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• 2006

In general, HF chemistry lifts off the particles during scrubbing after polishing and effectively removes particles. It is sometimes impossible to apply HF chemistry on W plug due to the degradation of electrical characteristics of a device. In this paper, a post W CMP cleaning process is proposed to remove residue particles without applying HF chemistry. After W CMP, recessed plugs are created, therefore they easily trap slurry particles during CMP process. These particles in recessed plug are not easy to remove by brush scrubbing when $NH_4OH$ chemistry is used for the cleaning because the brush surface can not reach the recessed area of plugs. Buffing with oxide slurry was followed by W CMP due to its high selectivity to W. The buffing polishes only oxide slightly which creates higher plug profiles than surrounding oxide. Higher profiles make the brush contact much more effectively and result in a similar particle removal efficiency even in $NH_4OH$ cleaning to that in HF brush scrubbing.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.197-202
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• 2004

As a part of environmental pollution prevention and resources recycling, the regeneration of waste tire has been largely contributed to national industry. But, the worker has been evaded this regeneration process by reason of the best mischievous process condition among 3D industries. So, the first, the process condition of regenerating waste tire was analyzed. The second, the equipment or system was developed for the improvement of working strength and environment. The last, researchers intend to solve these problems

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.175-180
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• 2004

As a part of environmental pollution prevention and resources recycling, the regeneration of waste tire has been largely contributed to national industry. But, the worker has been evaded this regeneration process by reason of the best mischievous process condition among 3D industries. So, the first, the process condition of regenerating waste tire was analyzed. The second, the equipment or system was developed for the improvement of working strength and environment. The last, researchers intend to solve these problems

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.1469-1473
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• 2004

We suggest how to program off-line robot path along shoes' outsole shape in the footwear buffing process by a 5-axis microscribe system like robot arms. This microscribe system developed consists a 5-axis robot link with a turn table, signal processing circuit, PC and an application software program. It makes a robot path on the shoe's upper through the movement of a microscribe with many joints. To do this, first it reads 5-encoder's pulse values while a robot arm points a shoes' outsole shape from the initial status. This system developed calculates the encoder pulse values for the robot arm's rotation and transmits the angle pulse values to the PC through a circuit. Then, Denavit-Hartenberg's(D-H) direct kinematics is used to make the global coordinate from robot joint one. The determinant is obtained with kinematics equation and D-H variable representation. To drive the kinematics equation, we have to set up the standard coordinates first. The many links and the more complicated structure cause the difficult kinematics problem to solve in the geometrical way. Thus, we can solve the robot's kinematics problems efficiently and systematically by Denavit-Hartenberg's representation. Finally, with the coordinate values calculated above, it can draw a buffing gauge-line on the upper. Also, it can program off-line robot path on the shoes' upper. We are subjected to obtaining shoes' outline points, which are 2 outlines coupled with the points and the normal vector based on the points. These data is supposed to be transformed into .dxf file to be used for data of automatic buffing robot. This system developed is simulated by using spline curves coupled with each point from dxf file in Autocad. As a result of applying this system to the buffing robot in the flexible footwear manufacturing system, it can be used effectively to program the path of a real buffing robot.