한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Post-Cu CMP cleaning에서 연마입자 제거에 buffing 공정이 미치는 영향

The effect of buffing on particle removal in Post-Cu CMP cleaning

  • 김영민 (부산대학교 대학원 기계공학부 정밀가공시스템) ;
  • 조한철 (부산대학교 대학원 기계공학부 정밀가공시스템) ;
  • 정해도 (부산대학교 대학원 기계공학부 정밀가공시스템)
  • Kim, Young-Min (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.) ;
  • Cho, Han-Chul (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.) ;
  • Jeong, Hae-Do (Precision Manufacturing System Div., Graduate School of Mechanical Engineering, Pusan National Univ.)
  • 발행 : 2008.06.19
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초록

Copper (Cu) has been widely used for interconnection structure in intergrated circuits because of its properties such as a low resistance and high resistance to electromigration compared with aluminuim. Damascene processing for the interconnection structure utilizes 2-steps chemical mechanical polishing(CMP). After polishing, the removal of abrasive particles on the surfaces becomes as important as the polishing process. In the paper, buffing process for the removal of colloidal silica from polished Cu wafer was proposed and demonstrated.

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