• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1054-1057
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• 2002

The design and fabrication of Q-band 3-stage monolithic microwave integrated circuit(MMIC) amplifier for WLAN are presented using 0.2$\square$ AIGaAs/lnGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT). In each stage of the MMIC, a negative feedback is used for both broadband and good stability. The measurement results are achieved as an input return loss under -4dB, an output return loss under -10dB, a gain of 14dB, and a PldB of 17dBm at Q-band(36～44GHz). These results closely match with design results. The chip size is 2.8${\times}$1.3mm$^2$. This MMIC amplifier will be used as the unit cell to develop millimeter-wave transmitters for use in wideband wireless LAN systems.

• International Journal of Contents
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• v.2 no.1
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• pp.29-33
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• 2006

The common-source low noise amplifier(LNA) with inductive degeneration using a genetic algorithm is designed and tested for a down converter in an industrial, scientific and medical (ISM) band application and a wireless broadband internet service (WiBro). The genetic algorithm optimizes the reflection coefficients to be well matched the input and output ports between multistage transistor amplifiers, and it generates low voltage standing wave ratio as well as gain flatness of the amplifier. The stability and the gain flatness of the LNA have been improved by combining the matching circuits and the series feedback microstrip lines with inductive degeneration at common-source port. In the frequency range of ISM band and WiBro application operating at $2.3GHz{\sim}2.5GHz$, the measured power gain and maximum voltage standing wave ratio (VSWR) of the LNA are $41{\pm}0.5dB$ and 1.3, and the noise figure of the LNA is lower than 0.85dB. The above results are agreed well with the theoretical values of the amplifiers.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.261-264
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• 2005

In this paper, wish to improve reception performance of general receiver manufacturing broadband reception amplifier that can thread easily in VHF transmit-receive equipment into downsize, light weight, low-cost. Manufactured reception amplifier expressed Characteristic that improve reception sensitive 3dBm in 140MHz ${\cdot}$ 170MHz frequency band. Therefore, may use communications equipment that utilize VHF wide-band more efficiently. Also, practical use degree is considered to be very high because telecommunication of good quality is available.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.4B
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• pp.406-409
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• 2001

본 논문에서는 IMT-2000 대역에서 전방급전 전력증폭기의 선형성을 개선하여 효율과 대역폭을 극대화 하기 위해 Photonic Bandgap(PBG), 전치왜곡, 2차고조파 튜닝 방식으 f동시에 주 증폭기에 적용하였다. 2차 하모닉 성분이 2차고조파 튜닝 방식에 의해 우수하게 제거되고, 3차 하모닉 성분이 전치왜곡 방식에 의해 제거되며 출력단위 PBG느 s고아대역 특성으로 4차 하모닉 이상까지 제거하는 우수한 특성을 보여주었다. 총체적으로 기존의 전방급전 전력증폭기보다 IMD가 최고 15dBc, 효율은 4%, 대역폭은 2배이상 확대됨으로 전력효율과 대역폭을 극대화시킬 수 있었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.3
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• pp.276-282
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• 2015

Until recently, power amplifiers using LDMOS were Class-AB and Doherty type, and showed 55 % efficiency for narrowband of 60 MHz bandwidth. However, owing to the RRH application of base stations power amplifier module, a bandwidth expansion of at least 100 MHz and high efficiency power amplifiers of at least 60 % power efficiency are required. In this study, a Class-J power amplifier was designed by optimizing an output matching circuit so that the second harmonic load will contain a pure reactance element only and have broadband characteristics by using GaN HEMT. The measurements showed that a 45 W Class-J power amplifier with a power added efficiency of 60~75 % was achieved when continuous wave signals were input at 1.6~2.3 GHz, including W-CDMA application.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.8
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• pp.1817-1823
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• 2009

A design of cascaded distributed amplifier with a broadband amplification is described in this paper. A medium power device with 23dBm, max output power under the optimal narrow-band power matching condition is adopted for the design and fabrication of the cascaded distributed amplifier. In general, conventional distributed amplifiers with the parallel connected input ports have a low gain, and previous cascaded distributed amplifiers show a relatively low output power of 10dBm at most, which is the upper limit of small signal amplification. However, the cascaded distributed amplifier in this paper shows the gain of $18.15{\pm}0.75dB$ and output power of 20dBm over $300MHz{\sim}2GHz$ from the measurement, so it can be well adopted as a wideband driver amplifier.

• Journal of electromagnetic engineering and science
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• v.11 no.1
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• pp.16-26
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• 2011

This paper presents high power and high efficiency Doherty amplifiers for 2.345 GHz wireless broadband (WiBro) applications that use a Nitronex 125-W ($P_{3dB}$) GaN high electron mobility transistor (HEMT). Two- and three-way Doherty amplifiers and a saturated Doherty amplifier using Class-F circuitry are implemented. The measured result for a center frequency of 2.345 GHz shows that the two-way Doherty amplifier attains a high $P_{3dB}$ of 51.5 dBm, a gain of 12.5 dB, and a power-added efficiency (PAE) improvement of about 16 % compared to a single class AB amplifier at 6-dB back-off power region from $P_{3dB}$. For a WiBro OFDMA signal, the Doherty amplifier provides an adjacent channel leakage ratio (ACLR) at 4.77 MHz offset that is -33 dBc at an output power of 42 dBm, which is a 9.5 dB back-off power region from $P_{3dB}$. By employing a digital pre-distortion (DPD) technique, the ACLR of the Doherty amplifier is improved from -33 dBc to -48 dBc. The measured result for the same frequency shows that the three-way Doherty amplifier, which has a $P_{3dB}$ of 53.16 dBm and a gain of 10.3 dB, and the saturated Doherty amplifier, which has a $P_{3dB}$ of 51.1 dBm and a gain of 10.3 dB, provide a PAE improvement of 11 % at the 9-dB back-off power region and 7.5 % at the 6-dB back-off region, respectively, compared to the two-way Doherty amplifier.

• Korean Journal of Optics and Photonics
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• v.8 no.4
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• pp.320-326
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• 1997

Broadband sources for fiber-optic gyroscope were constructed using erbium-doped fibers. Output power, linewidth, and mean wavelength were compared between four different source configurations. Among them, double pass configuration exhibited the highest output power, as high as 5.5 mW with 25 mW pumping at 1.48 ${\mu}{\textrm}{m}$ wavelength. It also showed nearly zero sensitivity of mean wavelength for the variation of pump power when a sufficient pumping was provided. Amplifier/Source configuration resulted in the highest detected power(power received by the gyro detector) that is more than 100 times larger than those of the other configurations, though it was the lowest of source output power. As the feedback level increased, the source power decreased while the linewidth increased, and mean wavelength varied significantly which would affect the scale factor of the gyroscope.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.05a
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• pp.693-695
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• 2015

The design and implementation of a broadband and linear HPA for TVWS are presented in this paper. The spectrum mask and transmitted power of HPAs for TVWS must be controlled and meet the regulations to minimize interference effects on the present broadcasting systems. The implemented HPA has the operating frequency of 470 ~ 698MHz with the maximum 48.63dB and minimum 43.45dB gain, input reflection coefficient of below -21.32dB, output reflection coefficient of below -4.29dB and the linearity of -45.24dBc at 28.79dBm output power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.4
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• pp.449-456
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• 2012

Herein, we design a wideband $8{\times}8$ waveguide Butler matrix in order to use in a multi-port amplifiers(MPAs) at Ka-band. To achieve the broadband characteristic, we design a binomial 6-slot 3 dB directional coupler which is used to configure the $8{\times}8$ Butler matrix. The measured results of the fabricated $8{\times}8$ Butler matrix have low insertion loss of less than 0.3 dB, good return loss of over 26 dB and high isolation of over 35 dB within the design bandwidth of 3 GHz.