• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.8
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• pp.1733-1739
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• 1997

An ultra-compact milimeter-wave broadband MMIC amplifier was designed using a direct-coupled topology combined with optimum feedback design. Significant reductionin the chip size was possible by employing the direct-coupled topology. Bias resistors required for the direct-coupled topology were also used as feedback elements. Feedback was optimized for millimeter-wave frequencies using reactive elements. The fabricated MMIC amplifier was realized in a chip size of 0.8mm$^{[-992]}$ and showed gains higher than 8 dB from 12 to 44 GHz. An output power of 30mW was achieved at 44 GHz with a drain efficiency of 10%.

• ETRI Journal
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• v.28 no.4
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• pp.513-516
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• 2006

Experimental demonstration of bipolar spectral encoding code-division multiple-access with modified pseudorandom noise codes is presented. Bipolar spectral encoding is achieved with an erbium-doped fiber amplifier amplified spontaneous emission source and arrayed waveguide gratings. The bit-error rate performance of 1.25 Gbps signal transmission over 80 km single mode fiber is measured in a multiple-user environment.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.105-111
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• 2004

In this paper, millimeter-wave high gain and broadband MHEMT cascode amplifiers were designed and fabricated. The 0.1 ${\mu}{\textrm}{m}$ InGaAs/InAlAs/GaAs Metamorphic HEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(f$_{T}$) is 173 GHz and the maximum oscillation frequency(f$_{max}$) is 271 GHz. By using the CPW transmission line, the cascode amplifier was designed the matched circuit for getting the broadband characteristics. The designed amplifier was fabricated by the MHEMT MIMIC process that was developed through this research. As the results of measurement, the 1 stage amplifier obtained 3 dB bandwidth of 37 GHz between 31.3 to 68.3 GHz. Also, this amplifier represents the S21 gain with the average 9.7 dB gain in bandwidth and the maximum gain of 11.3 dB at 40 GHz. The 2 stage amplifier has the broadband characteristics with 3 dB bandwidth of 29.5 GHz in the frequency range from 32.5 to 62.0 GHz. The 2 stage cascode amplifier represents the high gain characteristics with the average gain of 20.4 dB in bandwidth and the maximum gain of 22.3 dB at 36.5 GHz.z.z.

• Journal of IKEEE
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• v.26 no.3
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• pp.456-461
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• 2022

In this paper, a two-stage single-ended power amplifier (PA) with broadband gain characteristics was presented by utilizing a radio frequency (RF) transformer (TF), which is essential for a differential amplifier. The bandwidth of a PA can be improved by designing TF to have broadband characteristics and then applying it to the inter-stage matching network (IMN) of a PA. For broadband gain characteristics while maintaining the performance and area of the existing PA, an IMN was implemented on an monolithic microwave integrated circuit (MMIC) and a multi-layer printed circuit board (PCB), and the simulation results were compared. As a result of simulating the PA module designed using InGaP/GaAs HBT model, it has been confirmed that the PA employing the proposed design method has an improved fractional bandwidth of 19.8% at a center frequency of 3.3GHz, while the conventional PA showed that of 11.2%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.3C
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• pp.234-240
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• 2002

A power amplifier with AlGaAs/InGaAs/GaAs HBT's has been developed for customer premise equipments of the quasi millimeter-wave frequency-band broadband wireless local loop(BWLL) system. Parameters of the linear and nonlinear equivalent circuits for a common base HBT have been extracted by a fitting method. The amplifier has been designed through the linear and nonlinear circuit simulations and fabricated on a ceramic substrate for a hybrid IC. The amplifier has produced a 25.5-dBm output power with 35% power-added efficiency(PAE) at 24.4 GHz and achieved a 7.5-dB linear power gain at 24.8 GHz. In 24.25 ∼24.75 GHz band, the amplifier has exhibited a saturated output over larger than 22 dBm and PAE higher than 25%.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.487-488
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• 1995

Broadband Microwave Low Noise Amplifier(LNA) is designed. The matching method using the broadband BPF(BandPass Filter) is introduced in this paper. This method is that the filter having the same reflection coefficient of Microwave GaAs FET in the desired bandwidth is located on the input stage of FET. The Simulated results is obtained that the $S_{21}$ and noise figure in 2.5GHz$\sim$9GHz, band are 8.5dB $\pm$ 1.5dB, 2.5dB $\pm$ 0.3dB respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1429-1435
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• 2004

In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.5
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• pp.711-718
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• 1999

Some of modern communication systems make use of broadband digital modulation with 5 MHz and 10 MHz. In the broadband communication systems, the nonlinear properties of power amplifier have a great effect on all systems. This paper analyzed the ACPR characteristics of WLL reverse link power amplifier with the varying AM and PM nonlinearities and suggests the required backoff from 1 dB compression point to satisfy the ACPR specifications. Also the comparions between the measured and the simulated characteristics are presrnted.

• Journal of the Optical Society of Korea
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• v.15 no.1
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• pp.4-8
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• 2011

We have evaluated the performances of bidirectional optical amplifiers which were suited for the cost-effective implementation of amplified bidirectional passive optical networks (PONs). First, we measured the maximum gains of two simple bidirectional optical amplifiers implemented without using any optical components for the suppression of reflected signals. From the results, the maximum gains of two simple bidirectional amplifiers with a broadband light source (BLS) seeded optical source were limited to be 27 dB due to the reflection-induced in-band crosstalk, when the reflectance coefficients were measured to be -33 dB in both directions. Then, we have also implemented a bidirectional optical amplifier with two band splitters for the amplified bidirectional PON where the two different wavelength bands were allocated to the downstream and upstream signals transmission. In our measurement, we confirmed that the maximum gain of bidirectional optical amplifier with two band splitters could be increased to more than 30 dB owing to the efficient suppression of in-band crosstalk.

• Current Optics and Photonics
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• v.6 no.1
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• pp.32-38
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• 2022

Erbium-doped fiber amplifiers (EDFAs) have saturated the technological market but are still widely used in high-speed and long-distance communication systems. To overcome EDFA saturation and limitations, its erbium-doped fiber is co-doped with other materials such as zirconia and bismuth. This article demonstrates and compares the performance using three different fibers as the gain medium for zirconia-erbium-doped fibers (Zr-EDF), bismuth-erbium-doped fibers (Bi-EDF), and commercial silica-erbium-doped fibers (Si- EDF). The optical amplifier was configured with a double-pass amplification system, with a broadband mirror at the end of its configuration to allow double-pass operation in the system. The important parameters in amplifiers such as optical properties, optical amplification and noise values were also examined and discussed. All three fibers were 0.5 m long and entered with different input signals: 30 dBm for low input and 10 dBm for high input. Zr-EDF turned out to be the most relevant optical amplifier as it had the highest optical gain, longest transmission distance, highest average flatness gain with minimal jitter, and relevant noise figures suitable for the latest communication technology.