• 전기학회논문지
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• 제56권7호
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• pp.1282-1287
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• 2007

We investigated the damage of the CMOS IC which manufactured three different technologies by high power microwave. The tests separated the two methods in accordance with the types of the CMOS IC located inner waveguide. The only CMOS IC which was located inner waveguide was occurred breakdown below the max electric field (23.94kV/m) without destruction but the CMOS IC which was connected IC to line organically was located inner waveguide and it was occurred breakdown and destruction below the max electric field. Also destructed CMOS IC was removed their surface and a chip condition was analyzed by SEM. The SEM analysis of the damaged devices showed onchuipwire and bondwire destruction like melting due to thermal effect. The tested results are applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial electromagnetic wave environment and are applied to the data which understand electromagnetic wave effects of electronic equipments.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.11-13
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• 1992

The dielectric reliability of the Thin $SiO_2$ films of wet oxidation on n-type Si substrates has been studied by using self-healing method of breakdown and according to injection time high frequence C-V tests. These experiments have been performed to investigate the dielectric breakdown mechanism of a thin film in which positive charge generation during high-field Fowler-Nordheim tunneling are considered. In addition, The weak spots and robust areas are distinguished so that the localized dielectric breakdown could be described.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.46-48
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• 2004

A micro-scale discharge device has been fabricated using MEMS technology and failure mechanisms during DC discharge are investigated for the microstructure. The failure of sustaining the plasma is mainly caused by either open or short of the micro-electrodes, both resulting from the sputtered metal atoms during the DC discharge. The glow discharge lifetime of the microstructures is found to depend on bias circuit scheme as well as the electrode structure. Based on the understanding of the failure mechanism, a novel microstructure is suggested to improve discharge lifetime and the longer lifetime is experimentally demonstrated. In addition to the failure mechanism, an electric breakdown between two electrodes with microns gap are studied using micromachined metal structures. The electrode gap is able to be accurately controlled by thickness of a sacrificial layer and the electric breakdown was measured while varying the gap from $2{\mu}m$ to $20{\mu}m$. The electric breakdown behavior was found to highly depend on the electrode material, which was not considered in Paschen's law.

• 한국산업융합학회 논문집
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• 제5권1호
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• pp.39-43
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• 2002

In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.232-235
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• 2003

To realize the development of HTS power apparatus, various breakdown test of L$N_2$ should be carried out and the mechanism should be understood more. Moreover the dielectric design technology that the basic dielectric experimental data applied to the HTS power system should be developed. In this paper, the electric fields for the insulation design were calculated for example with the analysis of Weibull distribution. And V-t characteristics of L$N_2$ were discussed. Around the breakdown voltage the n values were less than 1.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.302-305
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• 1989

Ac, dc and impulse dielectric strengths of $LN_2$ at 0.1MPa were investigated experimentally, referring to the behavior of thermally induced bubble, which might be generated at quenching condition of immerged-cooling superconducting devices. The experimental results show that the bubble shape under electric field stress depends significantly on the applied voltage waveform. With ac voltage, the breakdown voltage of $LN_2$ falls suddenly near to one of the saturated gas at the threshold heater power of boiling onset. In control to this, the reduction of impulse breakdown voltage with heater peter is gradual and the time to breakdown depends on the existence of thermal bubble. These breakdown characteristics can be explained satisfactorily by the bubble behavior under electric fields.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.756-760
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• 1988

The paper presents the measurement results on the parameters affecting the breakdown mechanism of a large air spacing under switching impulse voltages. Measured parameters are the velocities of leader channels, predischarge currents, electric charges injected into the rod-plane air gap and electric field intensities on the plane. For the 3m air gap under switching impulse voltages, the velocities of leader channel have been measured to be of 1cm/${\mu}s$ - 5cm/${\mu}s$, electric field intensity of 2kv/cm, predischarge current of 1.2A - 1.6A, the charges injected into the air gap of 11 - 40 ${\mu}$C for 400-887kV impulse voltages.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.551-557
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• 1995

For the observation of treeing, a visual measurement with an optical microscope has been used to explain breakdown mechanism in high-voltage systems. The conventional directed visual method of tree aging observation is difficult to measure in short time processing, and it is impossible to analyze on tree degradation area, progressed direction, tree pattern, etc. By using an image processing technique, the tree features which appear immediately after the tree initiation as well as changes in the configuration of the tree can be easily measured and observed than using the conventional visual methods. In this paper, we have developed a tree observating system by using image processing for tree growth, degradation area and other treeing progress. As an experimental result, it can be concluded that the image processing method is a more effective alternative than directed visual observation method. As a matter of fact, it is possible to record the image of tree propagation immediately after its first appearance and explain the characteristics of tree growth froth the computer processing image.

• 전기전자학회논문지
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• 제27권4호
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• pp.567-572
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• 2023

본 논문에서는 Partial isolation lateral double diffused metal oxide semiconductor(Pi-LDMOS)의 항복전압에 대해 시뮬레이션을 통해 분석하였다. 항복전압 변화는 Partial buried oxide(P-BOX)의 다양한 파라미터(길이, 두께, 위치)에 따라 조사되었고, 그 메커니즘에 대해 명기하였다. 또한 항복전압과 trade-off 관계에 있는 온저항의 변화를 P-BOX 파라미터 변화에 따라 분석하였고 Figure of merit(FOM)을 계산하여 비교하였다. 제안된 구조에서 L_box=5㎛, t_box=2㎛, L_bc=2㎛일 경우 138V의 가장 높은 항복전압을 나타내었고, L_box=5㎛, t_box=1.6㎛, L_bc=2㎛일 경우 가장 높은 FOM을 나타내었다. 이는 conventional LDMOS 대비 항복전압은 123%, FOM은 3.89배 향상된 수치이다. 따라서 Pi-LDMOS는 높은 항복전압과 FOM을 가져 Power IC의 안정적인 동작범위 향상에 기여할 수 있다.

• Bulletin of the Korean Chemical Society
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• 제16권9호
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• pp.839-844
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• 1995

The kinetics and mechanism of the reactions of phenyl benzoates with benzylamines and pyrrolidine are investigated in acetonitrile. The variations of ρX (ρXY>0) and ρZ (ρYZ<0) with respect to the substituent in the substrate (σY) indicate that the reactions proceed through a tetrahedral intermediate, T±, with its breakdown in the rate determining step. The large magnitudes of ρZ, ρXY and ρYZ as well as the effects of secondary kinetic isotope effects involving deuterated nucleophiles are also in line with the proposed mechanism.