• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.7
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• pp.1282-1287
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• 2007

We investigated the damage of the CMOS IC which manufactured three different technologies by high power microwave. The tests separated the two methods in accordance with the types of the CMOS IC located inner waveguide. The only CMOS IC which was located inner waveguide was occurred breakdown below the max electric field (23.94kV/m) without destruction but the CMOS IC which was connected IC to line organically was located inner waveguide and it was occurred breakdown and destruction below the max electric field. Also destructed CMOS IC was removed their surface and a chip condition was analyzed by SEM. The SEM analysis of the damaged devices showed onchuipwire and bondwire destruction like melting due to thermal effect. The tested results are applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial electromagnetic wave environment and are applied to the data which understand electromagnetic wave effects of electronic equipments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.11-13
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• 1992

The dielectric reliability of the Thin $SiO_2$ films of wet oxidation on n-type Si substrates has been studied by using self-healing method of breakdown and according to injection time high frequence C-V tests. These experiments have been performed to investigate the dielectric breakdown mechanism of a thin film in which positive charge generation during high-field Fowler-Nordheim tunneling are considered. In addition, The weak spots and robust areas are distinguished so that the localized dielectric breakdown could be described.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.46-48
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• 2004

A micro-scale discharge device has been fabricated using MEMS technology and failure mechanisms during DC discharge are investigated for the microstructure. The failure of sustaining the plasma is mainly caused by either open or short of the micro-electrodes, both resulting from the sputtered metal atoms during the DC discharge. The glow discharge lifetime of the microstructures is found to depend on bias circuit scheme as well as the electrode structure. Based on the understanding of the failure mechanism, a novel microstructure is suggested to improve discharge lifetime and the longer lifetime is experimentally demonstrated. In addition to the failure mechanism, an electric breakdown between two electrodes with microns gap are studied using micromachined metal structures. The electrode gap is able to be accurately controlled by thickness of a sacrificial layer and the electric breakdown was measured while varying the gap from $2{\mu}m$ to $20{\mu}m$. The electric breakdown behavior was found to highly depend on the electrode material, which was not considered in Paschen's law.

• Journal of the Korean Society of Industry Convergence
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• v.5 no.1
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• pp.39-43
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• 2002

In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.232-235
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• 2003

To realize the development of HTS power apparatus, various breakdown test of L$N_2$ should be carried out and the mechanism should be understood more. Moreover the dielectric design technology that the basic dielectric experimental data applied to the HTS power system should be developed. In this paper, the electric fields for the insulation design were calculated for example with the analysis of Weibull distribution. And V-t characteristics of L$N_2$ were discussed. Around the breakdown voltage the n values were less than 1.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.302-305
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• 1989

Ac, dc and impulse dielectric strengths of $LN_2$ at 0.1MPa were investigated experimentally, referring to the behavior of thermally induced bubble, which might be generated at quenching condition of immerged-cooling superconducting devices. The experimental results show that the bubble shape under electric field stress depends significantly on the applied voltage waveform. With ac voltage, the breakdown voltage of $LN_2$ falls suddenly near to one of the saturated gas at the threshold heater power of boiling onset. In control to this, the reduction of impulse breakdown voltage with heater peter is gradual and the time to breakdown depends on the existence of thermal bubble. These breakdown characteristics can be explained satisfactorily by the bubble behavior under electric fields.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.756-760
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• 1988

The paper presents the measurement results on the parameters affecting the breakdown mechanism of a large air spacing under switching impulse voltages. Measured parameters are the velocities of leader channels, predischarge currents, electric charges injected into the rod-plane air gap and electric field intensities on the plane. For the 3m air gap under switching impulse voltages, the velocities of leader channel have been measured to be of 1cm/${\mu}s$ - 5cm/${\mu}s$, electric field intensity of 2kv/cm, predischarge current of 1.2A - 1.6A, the charges injected into the air gap of 11 - 40 ${\mu}$C for 400-887kV impulse voltages.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.551-557
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• 1995

For the observation of treeing, a visual measurement with an optical microscope has been used to explain breakdown mechanism in high-voltage systems. The conventional directed visual method of tree aging observation is difficult to measure in short time processing, and it is impossible to analyze on tree degradation area, progressed direction, tree pattern, etc. By using an image processing technique, the tree features which appear immediately after the tree initiation as well as changes in the configuration of the tree can be easily measured and observed than using the conventional visual methods. In this paper, we have developed a tree observating system by using image processing for tree growth, degradation area and other treeing progress. As an experimental result, it can be concluded that the image processing method is a more effective alternative than directed visual observation method. As a matter of fact, it is possible to record the image of tree propagation immediately after its first appearance and explain the characteristics of tree growth froth the computer processing image.

• Journal of IKEEE
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• v.27 no.4
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• pp.567-572
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• 2023

In this paper, the breakdown voltage of Pi-LDMOS (Partial isolation lateral double diffused metal oxide semiconductor) was analyzed by simulation. Breakdown voltage variation is investigated under various settings of Parial buied oxide(P-BOX) parameters(length, thickness, location) and their mechanism is specified. In addition, the change in on-resistance in the breakdown voltage and trade-off relationship was analyzed according to the change in the P-BOX parameter, and the Figure-of-merit(FOM) was calculated and compared. In proposed structure, Lbox=5 ㎛, tbox=2 ㎛, and Lbc=2 ㎛ showed the highest breakdown voltage of 138V, and Lbox=5 ㎛, tbox=1.6 ㎛, and Lbc=2 ㎛ showed the highest FOM. Compared to conventional LDMOS, the breakdown voltage is 123% and FOM is 3.89 times improved. Therefore, Pi-LDMOS has a high breakdown voltage and FOM, which can contribute to the improvement of the stable operating range of the Power IC.

• Bulletin of the Korean Chemical Society
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• v.16 no.9
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• pp.839-844
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• 1995

The kinetics and mechanism of the reactions of phenyl benzoates with benzylamines and pyrrolidine are investigated in acetonitrile. The variations of ρX (ρXY>0) and ρZ (ρYZ<0) with respect to the substituent in the substrate (σY) indicate that the reactions proceed through a tetrahedral intermediate, T±, with its breakdown in the rate determining step. The large magnitudes of ρZ, ρXY and ρYZ as well as the effects of secondary kinetic isotope effects involving deuterated nucleophiles are also in line with the proposed mechanism.