• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.964-969
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• 2014

In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.11-11
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• 2004

나노기술은 크게 2가지 접근방법을 가진다. 하나는 위에서 아래로(Top-Down)라는 관점으로 벌크물질로부터 이온빔 등을 이용해 이를 작게 잘라가는 방식이며, 다른 하나는 아래에서 위로(Bottom-Up) 방식으로 재질을 구성하는 분자를 재구성해 원하는 물성 및 특성을 가지도록 만드는 방법이다. 이 두 가지 접근 방법은 원하는 결과를 얻기 위해 상호 보완적으로 사용되기도 한다. Top-Down방식의 대표적인 기기로는 접속이온빔 장치(FIB, Focused Ion Beam)를 등 수 있으며, Bottom-Up방식의 대표적인 기기로는 SPM(Scanning Probe Microscope)을 들 수 있다.(중략)

• Korean Journal of Animal Reproduction
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• v.12 no.1
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• pp.42-47
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• 1988

This experiment was carried out to investigate the sex ratio of produced lamb after artificial insemination into the cervix with spermatozoa from the top and bottom portion of ram semen separated by diluting semen a column of protein, and after implantation into the uterus with normal morulae and blastocyst cultured in BMOG-3 and Ham F-10 medium containing H-Y anbibody and complement treated with spleen and testis, respectively. All embryos developed to morulae and blastocyst were cultrued in medium under gas phase of 5% CO2 in air at 37$^{\circ}C$, 24 hrs. Estrus of ewes induced by a MAP vaginal sponge and 750 IU PMSG during the non-breeding season. The result obtained in these experiments were summarized as follows: 1. The ratio of heating, lambing, and prolificacy after artificial inseminatin into the cervix of ewes induced by a MAP vaginal sponge and 750 IU PMSG during the non-breeding season were 100%, 40% and 2.74 heads, respectively. 2. Involving 44 ewes, spermatozoa from the top of the protein column produced 23.1% male and 76.9% female lambs, while spermatozoa from the bottom of the column produced 81.3% male and 18.8% female offspring, respectively. 3. The sex ratio (male-to-female) of progeny produced after implantation with normal morulae and blastocyst cultured in medium containing H-Y antibody and complement treated with spleen and testis were 21.0%, 79.0% and 17.4%, 82.6%, respectively.

• Journal of Magnetics
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• v.10 no.3
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• pp.99-102
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• 2005

Modification in exchange bias of a NiFe/FeMn/NiFe trilayer, on introduction of a nonmagnetic Al layer at the top FeMn/NiFe interface, is investigated in multilayers prepared by rf magnetron sputtering. The introduction of Al layer leads to vanishing of bias of the top NiFe layer. But the bias for the bottom NiFe layer increases steadily with increasing Al layer thickness and attains bias (230 Oe) which is greater than that of the trilayer without the Al layer (150 Oe). When the top NiFe layer thickness is varied, exchange bias has highest value at 12 nm thickness for 1 nm thicknes of Al layer. Ion beam etching of the top NiFe layer also leads to an enhancement in bias for the bottom NiFe layer.

• Archives of Craniofacial Surgery
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• v.20 no.3
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• pp.164-169
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• 2019

Background: The conventional surgical method for reconstructing orbital floor fractures involves restoration of orbital continuity by covering an onlay with a thin material under the periorbital region. However, in large orbital floor fractures, the implant after inserting is often dislocated, leading to malposition. This study aimed to propose a novel implanting method and compare it with existing methods. Methods: Among patients who underwent surgery for large orbital floor fractures, 24 who underwent the conventional onlay implanting method were compared with 21 who underwent the novel ${\gamma}$ implanting method that two implant sheets were stacked and bent to resemble the shape of the Greek alphabet ${\gamma}$. When inserting a ${\gamma}$-shaped implant, the posterior ledge of the orbital floor was placed between the two sheets and the bottom sheet was impacted onto the posterior wall of the maxilla to play a fixative role while the top sheet was placed above the residual orbital floor to support orbital contents. Wilcoxon signed-rank test and Mann-Whitney U test were used for data analyses. Results: Compared to the conventional onlay method, the gamma method resulted in better restoration of orbital contents, better improvement of enophthalmos, and fewer revision surgeries. Conclusion: Achieving good surgical outcomes for extended orbital floor fractures is known to be difficult. However, better surgical outcomes could be obtained by using the novel implantation method of impacting a ${\gamma}$-shaped porous polyethylene posteriorly.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2004.11a
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• pp.40-44
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• 2004

A fact that limits a company's ability to achieve more of its goal is referred to as a 'constraint' shipbuilding industries need to identify and manage constraints. The theory of constraints is evolved out of the problems of bottleneck formation. This happens and is conserved for the formulation if various real time problems for arriving standard uniquely addressed problems If, for example, the goal of a shipbuilding industry is to make money now and in the future, it is suggested that TOC will enable th mangers of the company to do so. TOC, focuses the organization scare resources on improving the performance of the true constraints, and therefore the bottom line of the organization. An attempt is made for the implantation of the theory into real world shipyard decision support mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.8-13
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• 2014

As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.

• Clean Technology
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• v.29 no.4
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• pp.255-261
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• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.733-741
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• 1996

In this study MeV Si self ion implantations were done to reveal the intrinsic behavior of defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant ones. Self implantations were conducted using Tandem Accelerator with energy ranges from 1 to 3 MeV. Defect formation by high energy ion implantation has a significant characteristics in that the lattice damage is concentrated near Rp and isolated from the surface. In order to investigate the energy dependence on defect formation, implantation energies were varied from 1 to 3 MeV under a constant dose of $1{\times}10^{15}/cm^2$. RBS channe!ed spectra showed that the depth at which as-implanted damaged layer formed increases as energy increases and that near surface region maintains better crystallinity as energy increases. Cross sectional TEM results agree well with RBS ones. In a TEM image as-implanted damaged layer appears as a dark band, where secondary defects are formed upon annealing. In the case of 2 MeV $Si^+$ self implantation a critical dose for the secondary defect formation was found to be between $3{\times}10^{14}/cm^24$ and $5{\times}10^{14}/cm^2$. Upon annealing the upper layer of the dark band was removed while the bottom part of the dark band did not move. The observed defect behavior by TEM was interpreted by Monte Carlo computer simulations using TRIM-code. SIMS analyses indicated that the secondary defect formed after annealing gettered oxygen impurities existed in silicon.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.149-161
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• 2004

The fusion of nano technology and information technology is essential to sustain the present growth rate and to induce new industry in this ever-growing information age. Considering Korean industry whose competitiveness lies heavily on information related technologies, this field will be inevitable for future. Nano materials can be described as novel materials whose size of elemental structure has been engineered at the nanometer scale. Materials in the nanometer size range exhibit fundamentally new behavior, as their size falls below the critical length scale associated with any given property. " Bottom-up' techniques involve manipulating individual atoms and molecules. Bottom-up process usually implies controlled or directed self assembly of atoms and molecules into nano structures. It resembles more closely the processes of biology and chemistry, where atoms and molecules come together to create structures such as crystals or living cells. Nano scale sensors are included in the electronics area since the diverse sensing mechanisms are often housed on a semiconductor substrate and usually give rise to an electronic signal. The application of nano technology to the chemical sensors should allow improvements in functionality such as gas sensing. In this presentation, we will discuss about the nano scale information materials and devices fabricated by using the organic/inorganic nano templates.