• Title/Summary/Keyword: Bottom Potential

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Long-term radiographic evaluation of infrabony defect treated by flap operation (치주판막술에 의해 치료된 골연하 결손부의 장기적 방사선학적 변화 양사의 관찰)

  • Bae, Sang-Ryul;Park, Jin-Woo;Suh, Jo-Young;Lee, Jae-Mok
    • Journal of Periodontal and Implant Science
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    • v.38 no.3
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    • pp.429-436
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    • 2008
  • Purpose: The goal of periodontal regenerative therapy is to replace bone, cementum, and periodontal ligament on a previously diseased root surface, which has suffered the loss of these supporting structures. To accomplish the regeneration, a number of surgical procedures have been advocated throughout the years. There seems to be a potential for some spontaneous periodontal tissue regeneration in the bottom of periodontal defect following open flap debridement alone. The aim of this study was to analyse the radiographic bone changes over 2-year after flap operation. Material and Methods: Patients attending the department of periodontics of Kyungpook National University Hospital were studied. Patients had clinical and radiographic evidence of infrabony defect(s). forty two sites of 33 patients aged 26 to 65 (mean age 45.5) were treated by flap operation with or without osseous surgery. Baseline and over 2-year follow-up radiographs were collected and evaluated for this study. Radiographic assessment includes a bone fill, bone crest change, defect resolution, and % of defect resolution. Pre- and post-treatment differences between variables (maxilla and mandible, gender, defect depth, defect angle) using the paired t-test were examined. Result: We observed 0.74 mm of bone fill, 0.66 mm of crestal resorption, 1.40 mm of defect resolution, and 27% of percentage of defect resolution. Mandible, women, deeper initial defect depth, narrower initial defect angle showed greater bone fill, defect resolution, and % of defect resolution. Conclusion: The results of this study suggest that the use of flap operation did enhance the outcome in terms of radiographically detectable bone fill. Both treatment resulted in some loss of crestal bone height.

Evaluation of Stability in reinforced Earth Retaining Wall by Vehicle Collision (차량 충돌에 의한 보강토 옹벽의 안정성 평가)

  • Ahn, Kwangkuk;Heo, Yol;Hong, Kinam;Ahn, Minsu
    • Journal of the Korean GEO-environmental Society
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    • v.11 no.6
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    • pp.39-46
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    • 2010
  • The past studies on reinforced earth retaining wall have been mostly focused on the internal and external failure of reinforced earth retaining wall, and the research for external impact was limited on earthquake. However, the potential external impact such as vehicle collision to reinforced earth retaining wall near the road are increasing with development of roads. Therefore, in this study, the reinforced earth retaining wall was modeled by using LS-DYNA, which is a general purpose finite element program recognized for its reliability. The behavior of reinforced earth retaining wall by vehicle speed was analyzed with Ford single unit truck offered by NCAC (National Crash Analysis Center), which is 8 tons weight. In addition, in order to obtain stability of reinforced earth retaining wall for vehicle collision, the gravity retaining wall was applied at the bottom of reinforced earth retaining wall. With varying the height of retaining wall (0.5m, 1.0m, 1.5m), the numerical study was performed to analyze the stability and behavior of reinforced earth retaining wall.

Channel Doping Concentration Dependent Threshold Voltage Movement of Asymmetric Double Gate MOSFET (비대칭 이중게이트 MOSFET의 도핑농도에 대한 문턱전압이동)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.9
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    • pp.2183-2188
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    • 2014
  • This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

Preparation of Nanocolumnar In2O3 Thin Films for Highly Sensitive Acetone Gas Sensor

  • Han, Soo Deok;Song, Young Geun;Shim, Young-Seok;Lee, Hae Ryong;Yoon, Seok-Jin;Kang, Chong-Yun
    • Journal of Sensor Science and Technology
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    • v.25 no.6
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    • pp.383-387
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    • 2016
  • Well-ordered nanocolumnar indium oxide ($In_2O_3$) thin films have been successfully fabricated by glancing angle deposition (GAD) using an e-beam evaporator. Nanocolumnar structures have a porous and large surface area with a narrow neck between nanocolumns, which allows them to detect minute amounts of gases. The nanocolumnar $In_2O_3$ thin films were fabricated by the GAD process at five different positions, viz. top, bottom, center, left, and right in a four inch substrate holder. There was a divergence in the thickness and the base resistance of each sensor. However, all the sensors exhibited extremely high sensitivity that was greater than $10^3$ times the change in electrical resistance after being exposed to 50 ppm of acetone gas at $300^{\circ}C$. Furthermore, the nanocolumnar $In_2O_3$ sensors displayed an extremely low detection limit (1.2 ppb) in dry atmosphere as well as in high humidity (80%). We demonstrated that the GAD nanocolumnar $In_2O_3$ sensors have an enormous potential for many applications owing to their particularly simple and reliable fabrication process.

Dissolution Mechanism of Abandoned Metal Ores and Formation of Ochreous Precipitates, Dalseong Mine (달성광산의 폐금속 광석의 용해메커니즘과 하상 침전물의 형성특징)

  • Choo, Chang-Oh;Lee, Jin-Kook;Jeong, Gyo-Cheol
    • The Journal of Engineering Geology
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    • v.18 no.4
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    • pp.577-586
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    • 2008
  • The formation of acid mine drainage is closely related to water chemistry and ochreous sprecipitates formed at the bottom of creeks because it is initially derived from the possible water-rock interaction in abandoned waste metals at the mine. According to analyses on water, precipitates, and alteration characters of ore metals in Dalseone mine, whitish precipitates formed at pHs above 5 while schwertmannite formed at pH $3{\sim}4$. Water chemistry vary with seasons. The water chemistry of the treatment site measured ir Octoter 2002 is characterized by lower pH, and higher Al, Zn, Cu contents relative to those in March, 2003. In the latter case, As and Cl contents are very high. $^{27}Al$ MAS NMR data show the presence of predominant octahedral Al in whitish precipitates. Metal ore minerals dissolve at margins, cleavage, or comer of crystals where reactive sites are potential. Pyrite dissolves, forming etch pits or smooth faces on the edge.

Wood and Cellular Properties of 4 New Hevea Species

  • Allwi, Norul Izani Md.;Sahri, Mohd. Hamami;Chun, Su-Kyoung
    • Journal of the Korea Furniture Society
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    • v.19 no.4
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    • pp.273-282
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    • 2008
  • Increasing demand for timber and the depletion of natural forest have encouraged utilization of many non-popular species. The understanding of wood properties and behavior is important to evaluate the potential of these species to produce high quality end products. This study determines the anatomical and physical properties of Hevea species viz Hevea pauciflora, Hevea guianensis, Hevea spruceana, Hevea benthamiana and Hevea brasiliensis. Each sample tree was cut into three different portions along the height (bottom- B, middle- M and upper -T parts) and two radial samples (outer- O and inner- I parts). H. brasiliensis clone RRIM 912 exhibited the longest fibre with $1214{\mu}m$, followed by H. benthamiana (HB, $1200{\mu}m$), H. pauciflora (HP, $1189{\mu}m$), H. spruceana (HS, $1158{\mu}m$) and H. guianensis (HG, $1145{\mu}m$). Fibre length has a positive correlation with specific gravity. The largest fibre diameter ($24.9{\mu}m$) and lumen diameter ($12.5{\mu}m$) were recorded in H. guianensis. The highest moisture content was obtained from H. spruceana (64.34%) compared to the lowest with 60.01% (Clone RRIM912). The higher moisture content is normally associated with lower strength. Overall, the properties of clone RRIM 912 is found to be comparatively better because of higher strength due to longer fibre length, thicker cell walls and higher specific gravity than the other Hevea species. Therefore, this species can be used as a general utility timber.

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Characterization of Wood Chip Ash Generated from a Power Plant (열병합 발전소에서 발생한 우드칩 분진에 대한 특성 분석)

  • Bang, Jung Won;Kim, Soo-Ryong;Kim, Younghee;Kim, Mido;Kang, Won-Seok;Cho, Kye-Hong;Kwon, Woo-Teck
    • Resources Recycling
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    • v.26 no.1
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    • pp.11-15
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    • 2017
  • The amount of the wood chip ash is expected to increase continuously as demand of wood chip-based heat and electricity increase. Thus, there is increased interest in wood chip ash utilization. In this study, as a program of utilization in wood chip ash, the physical and chemical properties of wood chip ashes generated from a combined heat and power plant were investigated. The chemical analysis showed that the main contents of wood chip ash are composed of silica, alumina and alkali. A possibility of reuse as secondary cementitious materials was investigated by the analysis of strength activity index, and compared with coal ash. The highest value for Strength activity index of wood chip fly ash was 78% at 90 days curing time. This result revealed that wood chip fly ash has the potential to be utilized as the admixture for cementitious material.

Tunneling Current of Sub-10 nm Asymmetric Double Gate MOSFET for Channel Doping Concentration (10 nm 이하 비대칭 DGMOSFET의 채널도핑농도에 따른 터널링 전류)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.7
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    • pp.1617-1622
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    • 2015
  • This paper analyzes the ratio of tunneling current for channel doping concentration of sub-10 nm asymmetric double gate(DG) MOSFET. The ratio of tunneling current for off current in subthreshold region increases in the region of channel length of 10 nm below. Even though asymmetric DGMOSFET is developed to reduce short channel effects, the increase of tunneling current in sub-10 nm is inevitable. As the ratio of tunneling current in off current according to channel doping concentration is calculated in this study, the influence of tunneling current to occur in short channel is investigated. To obtain off current to consist of thermionic emission and tunneling current, the analytical potential distribution is obtained using Poisson equation and tunneling current using WKB(Wentzel-Kramers-Brillouin). As a result, tunneling current is greatly changed for channel doping concentration in sub-10 nm asymmetric DGMOSFET, specially with parameters of channel length, channel thickness, and top/bottom gate oxide thickness and voltage.

Application based on the strictly combined method of BEM and CADMAS-SURF (BEM-CADMAS-SURF 결합해석법에 기초한 수치조파수조의 응용)

  • Kim, Sang-Ho;Yamashiro, Masaru;Yoshida, Akinori;Shin, Seung-Ho;Hong, Key-Yong
    • Journal of Navigation and Port Research
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    • v.33 no.1
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    • pp.65-70
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    • 2009
  • The hybrid numerical model is developed by combining BEM that can calculate the wave motion rapidly under the potential theory and CADMAS-SURF that solves Navier-Stokes equations for the free surface variation near the structure, In the hybrid model the calculation of wave motion in a wide field of wave reflection for deep water area is conducted by BEM but for shallow water area by CADMAS-SURF. Especially the hybrid model can calculate random wave motions for long term period more rapidly with almost similar accuracy than the calculation of wave motion which was carried out by CADMAS-SURF only. In this study the coupling model was applied to the calculation of the strong nonlinear wave motion such as wave runup and overtopping at the coastal structure on the mild-slope bottom and the results of numerical model were compared with the Toyosima's experiments of regular wave runup and Goda's design diagram of ramdom wave overtopping, respectively.

Drain Induced Barrier Lowering(DIBL) SPICE Model for Sub-10 nm Low Doped Double Gate MOSFET (10 nm 이하 저도핑 DGMOSFET의 SPICE용 DIBL 모델)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.8
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    • pp.1465-1470
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    • 2017
  • In conventional MOSFETs, the silicon thickness is always larger than inversion layer, so that the drain induced barrier lowering (DIBL) is expressed as a function of oxide thickness and channel length regardless of silicon thickness. However, since the silicon thickness is fully depleted in the sub-10 nm low doped double gate (DG) MOSFET, the conventional SPICE model for DIBL is no longer available. Therefore, we propose a novel DIBL SPICE model for DGMOSFETs. In order to analyze this, a thermionic emission and the tunneling current was obtained by the potential and WKB approximation. As a result, it was found that the DIBL was proportional to the sum of the top and bottom oxide thicknesses and the square of the silicon thickness, and inversely proportional to the third power of the channel length. Particularly, static feedback coefficient of SPICE parameter can be used between 1 and 2 as a reasonable parameter.