• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.18-22
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• 2005

We developed a new systematic calibration procedure and applied it to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity was studied under 4 different experimental conditions. Although the indium proved to be susceptible to the TED, the RTA was effective in suppressing the TED effect and in maintaining a steep retrograde profile. Just as in the case of boron, indium demonstrated significant oxidation-enhanced diffusion in silicon and its segregation coefficients at the Si/SiO₂ interface were significantly below 1. In contrast, the segregation coefficient of indium decreased as the temperature increased. The accuracy of the proposed technique has been validated by SIMS data and 0.13-㎛ device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.211-214
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• 2004

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidationenhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data and $0.13 {\mu}m$ device characteristics such as $V_{th}$ and $Id_{sat}$ with errors less than $5 \%$ between simulation and experiment.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.31-34
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• 2003

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data with errors less than 5% between simulation and experiment.

• Journal of the Korean Society of Industry Convergence
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• v.6 no.4
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• pp.299-305
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• 2003

This research is for the relationship with heat treatment cooling temprature and the characteristic of Mechanical properties of Boron-Addition-Steel, the main material and SM25C steel, the sub material, structure viewing fractography, hardness test, tensite test and are carried out after the manufacturing small-specimen treated with heat of $750^{\circ}C$, $850^{\circ}C$, $1050^{\circ}C$. The influence to the Mechanical properties accompanied by AISI51B20, Boron-Addition-steel shows the following result. 1. The influenc of heat treatment by the content of cabon-steel is dominant. Addition of boron result is Strengthening structure effectively by segregation and improving over all mechanical characters such as good. it results from the increase of temacity by the stability of inter granular with improvement of harden-ability. 2. Boron-Addition-Steel exist in the from of martensite structure accompanied by the ferrite precipitition centering around grain boundary, and is improved to Hv 200. 3. The height of harden-ability and fatigue stress the influence of heat results from crystal structure of martensite by difference of strength level in the structure of ferrite and doesn't have am effect on sensibility of temperature, and turns out to defend on production and growth of Matrix-structure-factor.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.2
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• pp.99-107
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• 1999

The graphitization is affected by the addition of small amount of the elements(such as Si, Al, Ni, B, Cr and Mn etc.) and the pre-treatment(such as cold rolling). Boron is well known element to accelerate the graphitization of cementite in high carbon steels. Also, cold rolling is known to accelerate the graphitization. But the graphitization nucleation mechanism by cold rolling is few reported. Therefore the effect of cold rolling in Fe-0.5%C-1.0%Si-0.47%Mn-0.005%B steel on the graphitization is investigated quantitatively using hardness test, optical microscope and scanning electron microscope, neutron induced microscopic radiography. The nucleation of graphite in cold-rolled Fe-0.5%C-1.0%Si-0.47%Mn-0.005%B steel is formed at void which is formed at pearlite/pearlite boundary by cold rolling. But the effect of cold rolling on graphitization in boron addition steel is more effective than that of no boron addition steel due to segregation of BN at void in boron addition steel.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.60-60
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• 2009

본 연구는 보론이 첨가된 저합금강 용접 열영향부에서의 보론 편석 거동 연구를 위해 보론이 10ppm 첨가된 저합금강을 이용하여 다양한 용접 입열량 및 외부 응력에 따른 용접부 CGHAZ의 보론 편석거동을 분석하였다. 이를 위해 Gleeble 시스템을 이용하여 다양한 입열량에 따른 CGHAZ를 열 및 열-응력 사이클을 통하여 재현하였다. 재현된 시편의 미세조직은 OM을 통하여 분석하고, 보론의 편석거동을 SIMS와 PTA 분석법을 통하여 분석하였다. 그 결과 입열량에 따른 보론의 편석 거동은 최초 입열량이 증가함에 따라 보론의 편석이 증가하다가 다시 감소하였는데 이는 비평형 편석 후 고온에서 유지시간이 길어짐에 따라 back diffusion 발생에 따른 영향으로 판단된다. 또한 외부 응력에 의한 보론 편석 거동 분석 결과, 용접 열 사이클 중 작용하는 외부 응력에 의해 결정립계 편석 감소하였는데 이는 외부 응력에 의한 오스테나이트 결정립 크기 감소에 따른 결정립계 증가의 영향으로 판단된다.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.306-310
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• 1992

Effects of hafnium, boron and zirconium on the ductility of Ni$_3$(Al, Fe) intermetallic compounds were studied using tensile test and SIMS analysis. Ni$_3$(Al, Fe) alloy with 0.1 at.% Hf, 0.05 at.% B and 0.1 at.% Zr additions showed maximum elongations of about 30% at 300K, 10% at 300K and 14% at 473K, respectively. The fracture mode of the alloy without the additive was the mixture of intergranular and transgranular fractures, but the addition of Hf, Zr or B changed the fracture mode to transgranular only. SIMS analysis showed that the beneficial effects of Hf, Zr or B segregation on the grain boundary strength are consistent with the grain boundary cohesion theory.

• Journal of the Korea Society for Simulation
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• v.11 no.1
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• pp.23-30
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• 2002

An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• Journal of Welding and Joining
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• v.31 no.3
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• pp.66-75
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• 2013

In this study, the effect of coating thickness($20{\mu}m$ and $30{\mu}m$) on microstructure and tensile properties in Yb:YAG disk laser welds of Al-Si-coated boron steel (1.2mmt) was investigated. In the case of as welds, the quantity of ferrite was found to be higher in base metal than that in HAZ (Heat Affected Zone) and fusion zone, indicating, fracture occurrs in base metal, and the fracture position is unrelated to the coating thickness. Furthermore, yield strength, tensile strength of base metal and welded specimens showed similar behavior whereas elongation was decreased. On the other hand, base metal and HAZ showed existence of martensite after heat treatment, the fusion zone indicated the presence of full ferrite or austenite and ferrite during heat treatment ($900^{\circ}C$, 5min), After water cooling, austenite was transformed to martensite, and the quantity of ferrite in fusion zone was higher as compared with in base metal, resulting in sharply decrease of yield strength, tensile strength and elongation, which leads to fracture occured at fusion zone. In particular, results showed that because the concentration of Al was higher in 30um coating layer specimen than that of 20um coating specimen, after heat treatment, producing a higher quantity of ferrite was higher after heat treatment in the fusion zone; howevers, it leads to a lower tensile property.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.9
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• pp.1060-1067
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• 1988

In this paper, we have investigated the effects of rapid thermal process on the electrical and structural properties of silicon films. It was shown that required times and temperature for the successful activation of dopants (Boron, Phosphorus:5E15atoms/cm\ulcorner were above 1000\ulcorner, 10sec, respectively. The typical resistivities of films deposited below 600\ulcorner were in the range of 1.0 E-3ohm-cm which was 20-30% lower than that of initially polycrystalline silicon depositd above 600\ulcorner. After rapid thermal process at high temperature above 1000\ulcorner, the films did not reveal any change in resistivity due to the dopant segregation, and better electrical conductivity could be obtained by increasing the process time. The grain growth by RTA treatment was more salient in the case of the doped amorphous than that of initially polycrystalline. The surface of the films also preserved the higher structural perfection and surface smoothness.