• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.348-351
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• 1995

A modified silicon direct bonding method has been developed alloying an intimate contact between grooved and smooth mirror-polished oxide-free silicon wafers. A regular set of grooves was formed during preparation of heavily doped $p^+$-type grid network by oxide-masking und boron diffusion. Void-free bonded interfaces with filing of the grooves were observed by x-ray diffraction topography, infrared, optical. and scanning electron microscope techniques. The presence of regularly formed grooves in bending plane results in the substantial decrease of dislocation over large areas near the interface. Moreover two strongly misoriented waters could be successfully bonded by new technique. Diodes with bonded a pn-junction yielded a value of the ideality factor n about 1.5 and the uniform distribution of series resistance over the whole area of horded pn-structure. The suitability of the modified technique was confirmed by I - V characteristics of power diodes and reversly switched-on dynistor(RSD) with a working area about $12cm^2$. Both devices demonstrated breakdown voltages close to the calculation values.

• 전기의세계
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• v.19 no.4
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• pp.18-23
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• 1970

A neutron detector, in general, can not be utilized as the thermal neutron detecting chamber in the nuclear power reactor, especially P.W.R. due to the characteristics of high temperature, high pressure and high neutron flux in a reactor vessel. We have performed an experiment to detect the thermal neutrons at 400.deg. C and high flux of thermal neutron in a power reactor. Coating boron-10 on the aluminium plates by means of surface diffusion method at 600.deg. C for 5 hours in an electric furace, also we made a typical chamber which was compensated ionization chamber filled with free air as an ionization gas. It was checked the chamber characteristics in the TRIGA MARK-II Reactor at the power level from zero to 250KW. The chamber current showed a perfect linear increase to power increase. However, many variation of the measured current were observed within the power of 50KW.

• Proceedings of the Korean Information Science Society Conference
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• 1998.10c
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• pp.674-676
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• 1998

소자가 sub-quarter um급으로 축소됨에 따라 STI(Shallow Trench Isolation) 기술은 고 집적도의 ULSI 구현에 있어서 중요한 격리 방법으로 많이 사용되고 있다. 현재의 STI 기술은 주로 실리콘 기판을 식각 후 절연물질로 빈 공백이 없이 채우는 (void-free gap filling) 방법 [1,2]과 절연물질을 다시 표면 근처까지 CMP(Chemical Mechnical Polishing)로 etchback하여 평탄화를 하는 방법이 주요한 기술이 되고 있다. 또한 STI 구조로된 격리구조에서 만들어진 MOSFET의 전기적인 특성은 트랜치 격리의 상부 부분의 형태와 gap-filling 물질에 따라 큰 영향을 받게된다. 따라서 본 논문에서는 STI 구조로 만들어진 격리 구조에서 MOSFET의 hump 특성에 관해 연구하였다. 그 결과 hump는 STI 모서리에서 필드 옥사이드의 recess에 의한 모서리 부분에서의 전계 집중과 boron의 segration에 기인한 농도 감소로 인해 hump가 발생하는 것으로 나타났다.

• Journal of Powder Materials
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• v.1 no.2
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• pp.135-144
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• 1994

Silicon carbide powder was prepared from mixtures of Sangdong silica sand and carbon black by SHS (Self propagating High temperature Synthesis) method which utilizes magnesiothermic reduction of silica. In the powder preparation process, the reacted powder was leached by chloric acid to remove the magnesium oxide and was subsequently roasted to remove free carbon. The impurities were mostly eliminated by hot acid treatment. The resultant SiC powder showed the mean particle size of 0.22 ${\mu}{\textrm}{m}$ and the specific surface area of $66.55 m^2/g$. The SiC powder was mixed with 1 wt% of boron and of carbon to increase densification rate. The mixed powder was pressed and sintered pressurelessly at $2100^{\circ}C$ for 30 min in argon gas. The sintered body showed the hardness of $2550 kg{\cdot}f/mm^2$ and the fracture toughness, KIC of $3.47 MN/m^{3/2}$.

• Bulletin of the Korean Chemical Society
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• v.9 no.3
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• pp.176-179
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• 1988

3-Methoxy-4-cyano-2,9-dioxabicyclo[4.3.0]non-3-e ne (1) was prepared by (4 + 2) cycloaddition reaction of methyl ${\alpha}$-cyanoacrylate with 2,3-dihydrofuran. Compound 1 was ring-open polymerized by cationic catalyst such as boron trifluoride etherate to obtain alternating head-to-head (H-H) copolymer (2) of methyl $\alpha$ -cyanoacrylate and 2,3-dihydrofuran. For comparison, head-to-tail (H-T) copolymer (3) was also prepared by free radical copolymerization of the corresponding monomers. The H-H copolymer exhibited minor differences in its $^1H$-NMR and IR spectra, but in the $^{13}C$-NMR spectra significant differences were observed between the H-H and H-T copolymers. All of the H-H and H-T copolymers were soluble in common solvents and the inherent viscosities were in the range 0.2-0.3 dl/g.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.735-740
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• 2005

The phase transformation of Ni-B diffusion barrier by Cu diffusion was studied. The Ni-B diffusion barrier, thickness of 10(Inn, was electrolessly deposited on the electroplated Cu interconnect. The specimens were annealed either in Ar atmosphere or in $H_2$ atmosphere from $300^{\circ}C\;to\;800^{\circ}C$ for 30min, respectively. Although the Ni-B coated specimens showed the decomposition of $Ni_3B$ above $400^{\circ}C$ in both Ar atmosphere and $H_2$ atmosphere, Ni-B powders did not show the decomposition of $Ni_3B$. The $Ni_3B$ was decomposed to Ni and B in hi atmospherr: and the metallic Ni formed the solid solution with Cu and the free B was oxidized to $B_2O_3$. However, both the boron hydride and free B were not observed in the diffusion barrier after the annealing in $H_2$ atmos There. These results revealed that the decomposition of $Ni_3B$ by Cu made the Cu diffusion continued toward the Ni-B diffusion barrier.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.368-373
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• 2012

Glasses were prepared with compositions of $(13-x)BaO-80B2_O_3-7Li_2O{\cdot}xSm_2O_3$, BBLSx(x=0.5, 0.4, 0.3) by melting the starting materials of boron oxide(99.9%), lithium oxide(99.9%), barium carbon oxide(99.9%), and samarium oxide(99.9%) and then quenching the melt at $1350^{\circ}C$. This led to good-quality BBLSx(x=0.4, 0.3) and poor-quality BBLSx(x=0.5) glasses. The physical and structural properties of the BBLSx glasses were studied by means x-ray diffraction, scanning electron microscopy(SEM), differential scanning calorimetry(DSC), and dielectric spectroscopy. From the x-ray diffraction and SEM results, the quality of the BBLSx glasses significantly depends on the $Sm_2O_3$ concentration. The x-ray diffraction pattern showed that the crystallites in the BBLSx glasses after heat treatment at $700^{\circ}C$ may be $LiBaB_9O_{15}$. From the DSC results, the glass transition temperatures($T_g$), crystallization temperatures($T_c$), and the maximum temperatures of the crystallized($T_p$) BBLSx glasses all changed with the $Sm_2O_3$ concentration. According to the dielectric spectroscopy results, the values of the real dielectric constant and Tan ${\delta}$ of the BBLSx glasses depended on the $Sm_2O_3$ concentration. The values of the real dielectric constant and Tan ${\delta}$ were also shown to depend on the measuring temperature, possibly due to the ion migration in the bulk of the BBLSx glasses.

• Current Photovoltaic Research
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• v.7 no.1
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• pp.9-14
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• 2019

Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as $MoO_x$, $WO_x$, $V_2O_5$ and $TiO_2$ replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as $MoO_x$, $WO_x$ and $V_2O_5$has been investigated. Recently $MoO_x$, $WO_x$ & $V_2O_5$ hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below $200^{\circ}C$. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.

• Journal of Energy Engineering
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• v.5 no.2
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• pp.146-152
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• 1996

A small power reactor core of 108 MW$\_$th/ was designed with some design constraints: 2 year refueling cycle length, soluble boron free operation, low power density, and proven fuel assembly design - Uljin 3'||'&'||'4 design specifications. CASMO-3 and KINS-3 was used to evaluate operational capability for power level control via control rods. Cycle length, power peaking factor, M.T.C., and power coefficients were also checked. Designed core loaded with KOFAs satisfied all design goals. We found that much more burnable poisons are to be loaded with axial enrichment zoning. Control rod assemblies should be located at every other assemblies with more than 3 banks. Additional shutdown banks are proposed for the safe plant cooldown, which could be located at core periphery.

• Journal of Powder Materials
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• v.16 no.2
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• pp.110-114
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• 2009

Mechanical coating process was applied to form 89 %-hydrolyzed poly vinyl alcohol (PVA) onto boron carbide ($B_4C$) nanopowder using one step high energy ball mill method. The polymer layer coated on the surface of B4C was changed to glass-like phase. The average particle size of core/shell structured $B_4C$/PVA was about 50 nm. The core/shell structured $B_4C$/PVA was formed by dry milling. However, the hydrolyzed PVA of $98{\sim}99%$ with high glass transition temperature ($T_g$) was rarely coated on the powder. The $T_g$ of polymer materials was one of keys for guest polymer coating on to the host powder by solvent free milling.