• Proceedings of the KWS Conference
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• 2005.06a
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• pp.393-395
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• 2005

The bonding for Aluminum and Copper in the air is investigated in this study. This bonding method does not include the special process of removing aluminum oxide films. In case of this bending, each metal Is heated at bonding temperature where is above eutectic temperature of Al-Cu system and below melting point of Aluminum. The liquefaction around the bonding surface occurs after the diffusion at solid state of each metal. This phenomenon is predicted by the temperature range above eutectic temperature of Al-Cu equilibrium phase diagram.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.70-78
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• 1983

This paper discusses the application of Si-Borosilicate glass sealing to a new sealing method which utilizes a large electrostatic field to pormote bound formation at relatively low temperature. Bonding mechanism and the effect of bonding time bonding temperature glass thickness and surface roughness on the bond strength were investigated. Application of a de voltage across bonded specimen gradually produced a layer of glass adjacent silicon which was depleted of mobile ions. As a consequence a n increasingly larger fraction of the applied voltage appeared across the depleted region and very large electric field resulted This field accompanyed by large electrostatic force acted as driving force the of strong bond. And stronger bond was formed with increasing bonding time and temperature. A low temperature preoxidation is advantageous for the Si surface having a rougher surface finish that 1 microinch.

• 연구논문집
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• s.24
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• pp.63-79
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• 1994

This article reports a experimental study of the method to achieve a bond joint at lower temperature in a short time. DC magnetron sputtering of Sn, Sn/Pb, Sn/In and Sn/Cu on copper substrate was provided as an interlayer for Cu to Cu bonding under the air environment. Various examination was conducted and investigated on the effect of experimental parameters such as coating materials, coating time(or coating thickness), bonding temperature and bonding time etc. Bonding was performed at the temperature of $210^\circC-320^\circC$ for 0sec and interfacial reaction between the coated layer and copper substrate was examined using optical, scanning electron microscope and x-ray diffractometer. From the obtained results, it was found that intermetallic compounds layer consisted of $\eta-phase(Cu_6Sn_5)$ and $\beta-phase(Cu_3Sn)$ was formed at the joint interface for almost all coating materials. But the dominant phase formed in the preetched Cu substrate coated with Sn was $\beta-phase$. A characteristic morphology looks like a reaction ring, which was believed as the strong interconnecting regions between two substrates, was found to be formed on the reaction surface of copper substrates. The morphologies and compositions of the intermetallics, which depends on the regions of the reaction surface, was appeared as greatly different. Based on above results, the new bonding process to make the joint at lower temperature for short time can be admitted as a feasible process.

• Journal of Welding and Joining
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• v.23 no.5
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• pp.55-60
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• 2005

A precise bonding technique, transmission laser bonding using energy transfer, for polymer micro devices is presented. The irradiated IR laser beam passes through the transparent part and absorbed on the opaque part. The absorbed energy is converted into heat and bonding takes place. In order to optimize the bonding quality, the temperature profile on the interface must be obtained. Using optical measurements of the both plates, the absorbed energy can be calculated. At the wavelength of 1100nm $87.5\%$ of incident laser energy was used for bonding process from the calculation. A heat transfer model was applied for obtaining the transient temperature profile. It was found that with the power of 29.5 mW, the interface begins to melt and bond each other in 3 sec and it is in a good agreement with experiment results. The transmission IR laser bonding has a potential in the local precise bonding in MEMS or Lab-on-a-chip applications.

• Journal of Welding and Joining
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• v.18 no.6
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• pp.62-67
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• 2000

Metallurgical characteristics of bonded region and high temperature mechanical properties of heat resistant alloy, Fe-35Ni-26Cr during liquid phase diffusion bonding were investigated employing AM17 insert metal. The insert metal for bonding, AM17 was newly developed Ni-base metal using interpolation method. Bonding of specimens were carried out at 1,403~1,463K for 600s in vacuum. The microconstituents in the bonded interlayer disappeared in the bonding temperature over 1,423K. The microstructures, alloying elements and hardness distribution in the base metal. The tensile strength and elongation of the joints at elevated temperatures were the same level as one of the base metal in the bonding temperature over 1,423K. The creep rupture strength and rupture lives of joints were almost identical to those of base metal.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.6
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• pp.543-547
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• 2008

In the paper, we develop the ultrasonic bonding technique for LCD driver chips having small size and high pin-density. In general, the mounting technology for LCD driver ICs is a thermo-compression method utilizing the ACF (An-isotropic Conductive Film). The major drawback of the conventional approach is the long process time. It will be shown that the conventional ACF method based on thermo-compression can be remarkably enhanced by employing the ultrasonic bonding technique in terms of bonding time. The proposed approach is to apply the ultrasonic energy together with the thermo-compression methodology for the ACF bonding process. To this end, we design a bonding head that enables pre-heating, pressure and ultrasonic excitation. Through the bonding experiments mainly with LCD driver ICs, we present the procedures to select the best combination of process parameters with analysis. We investigate the effects of bonding pressure, bonding time, pre-heating temperature before bonding, and the power level of ultrasonic energy. The addition of ultrasonic excitation to the thermo-compression method reduces the pre-heating temperature and the bonding process time while keeping the quality bonding between the LCD pad and the driver IC. The proposed concept will be verified and demonstrated with experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.199-204
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• 2009

The effect of temperature on ACF thermocompression bonding for FPD assembly was investigated, It was found that Au bumps on driver IC's were not bonded to the glass substrate when the bonding temperature was below $140^{\circ}C$ so bonds were made at temperatures of $163^{\circ}C$, $178^{\circ}C$ and $199^{\circ}C$ for further testing. The bonding time and pressure were constant to 3 sec and 3.038 MPa. To test bond reliability, FPD assemblies were subjected to thermal shock storage tests ($-30^{\circ}C$, $1\;Hr\;{\leftrightarrow}80^{\circ}C$, 1 Hr, 10 Cycles) and func! tionality was verified by driver testing. It was found all of FPDs were functional after the thermal cycling. Additionally, Au bumps were bonded using ACF's with higher conductive particle densities at bonding temperatures above $163^{\circ}C$. From the experimental results, when the bonding temperature was increased from $163^{\circ}C$ to $199^{\circ}C$, the curing time could be reduced and more conductive particles were retained at the bonding interface between the Au bump and glass substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.859-864
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• 2003

We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.89-94
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• 2021

The mechanical reliability of flexible devices has become a major concern on their commercialization, where the importance of reliable bonding is highlighted. In terms of component materials' properties, it is important to consider thermal damage of polymer substrates that occupy large area of the flexible device. Therefore, room temperature bonding process is highly advantageous for implementing flexible device assemblies with mechanical reliability. Conventional epoxy resins for the bonding still require curing at high temperatures. Even after the curing procedure, the bonding joint loses flexibility and exhibits poor fatigue durability. To solve this problems, low-temperature and adhesive-free bonding are required. In this work, we develop a room temperature bonding process for polymer substrates using carbon nanotube heated by microwave irradiations. After depositing multiple-wall carbon nanotubes (MWNTs) on PET polymer substrates, they are heated locally with by microwave while the entire bonding specimen maintains room temperature and the heating induces mechanical entanglement of CNT-PET. The room temperature bonding was conducted for a PET/CNT/PET specimen at 600 watt of microwave power for 10 seconds. Thickness of the CNT bonding joint was very thin that it obtains flexibility as well. In order to evaluate the mechanical reliability of the joint specimen, we performed lap shear test, three-point bending test, and dynamic bending test, and confirmed excellent joint strength, flexibility, and bending durability from each test.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.55-60
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• 2020

The recent semiconductor packaging technology is evolving into a high-performance system-in-packaging (SIP) structure, and copper-to-copper bonding process becomes an important core technology to realize SIP. Copper-to-copper bonding process faces challenges such as copper oxidation and high temperature and high pressure process conditions. In this study, the bonding interface quality of low-temperature copper-to-copper bonding using a two-step plasma treatment was investigated through quantitative bonding strength measurements. Our two-step plasma treatment formed copper nitride layer on copper surface which enables low-temperature copper bonding. The bonding strength was evaluated by the four-point bending test method and the shear test method, and the average bonding shear strength was 30.40 MPa, showing that the copper-to-copper bonding process using a two-step plasma process had excellent bonding strength.