• Journal of the Korean Society of Propulsion Engineers
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• v.23 no.4
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• pp.92-97
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• 2019

A study was conducted to improve the adhesion of propellant, liner,and insulation. Insulation was shown to be more advantageous in improving the adhesion when a barrier coat was applied compared to a bare insulation layer. It was confirmed that the adhesion strength between the insulation and the propellant improves as the thickness of the liner coating increases. The liner was cured for 24 h. If the liner is cured for a long time, it will adversely affect adhesion. Adhesion is also improved when a bonding agent is applied. As the bonding agent content increases, the adhesion improves. There is a change in the adhesive strength depending on the type of bonding agent used. HX-868 shows slightly more improved adhesion than HX-752.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.87-92
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• 2016

The importance of heat dissipation for the electric device modules along the thickness direction is increasing. Two types of two-layered materials, metal-metal bonding and dielectric-metal bonding, have been fabricated by roll bonding process and a thermal diffusivity of the specimens was measured along the thickness direction. The thermal diffusivity of specimens with metal-metal bonding measured by light flash analysis (LFA) showed a same value independent on the direction of heat flow. However, the thermal diffusivity of specimens with dielectric-metal bonding showed a big difference of 17.5% when the direction of heat flow changed oppositely in the LFA process. The measured thermal diffusivity of specimens when the heat flows from metal to dielectric direction showed smaller value of 17.5% compared to the value when the heat flow from dielectric to metal direction. The difference in thermal diffusivity of specimens with dielectric-metal bonding dependence on direction of heat flow is due to the electron-phonon resistance that occurred transfer process of electron energy to phonon energy near the interface.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.434-438
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• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

• Journal of the Korean Ceramic Society
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• v.36 no.11
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• pp.1228-1234
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• 1999

In order to form a uniform oxidation layer and spinel crystalline phase that was supposed to help strong bonding in Kovar(Fe-29Ni-17Co)to-glass sealing the humidified nitrogen (2.3%H2O/N2) was used as an oxidation atmosphere. Kovar oxidation was diffusion-contolled and the activation energy was 2.51 kcal/mol at 600-900$^{\circ}C$ After oxidation at 600$^{\circ}C$ the oxidation layer was under 1$\mu\textrm{m}$ thickness and crystalline phase was spinel which was found to be suitable for the Kovar-to-glass sealing.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.744-750
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• 1998

Unlike common device, MEMS(micro-electro-mechanical system) device consists of very small mechanical structures which determine the performance of the device. Because of its small mechanical structure inside. MEMS device is very sensitive to thermal stress caused by CTE(coefficient of thermal expansion) mismatch between its components. Therefore, its characteristics are affected by material properties. process temperature. and dimensions of each layer such as chip, adhesive and substrate. In this study. we investigated the change of the thermal stress in the chip attached to a substrate. With computer-aided finite element method (FEM), the computer simulation of the thermal stress was conducted on variables such as bonding material, process temperature, bonding layer thickness and die size. The commercial simulation program, ABAQUS ver5.6, was used. Subsequently 3-layer test samples were fabricated, and their degree of bending were measured by 3-D coordinate measuring machine. The experimental results were in good agreement with the simulation results. This study shows that the bonding layer could be the source of stress or act as the buffer layer for stress according to its elastic modulus and CTE. Solder adhesive layer was the source of stress due to its high elastic modulus, therefore high compressive stress was developed in the chip. And the maximum tensile stress was developed in the adhesive layer. On the other hand, polymer adhesive layer with low elastic modulus acted as buffer layer, and resulted in lower compressive stress. The maximum tensile stress was developed in the substrate.

• Proceedings of the Korea Concrete Institute Conference
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• 2001.11a
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• pp.509-514
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• 2001

The Fibre-optic Bragg grating (FBG) sensor is broadly accepted as a structural health monitoring device for Fibre reinforced plastic (FRP) materials by either embedding into or bonding onto the structures. The accuracy of the strain measured by using the FBG sensor is highly dependent on the bonding characteristics among the bare optical fibre, protective coating, adhesive layer and host material. In general, the signal extracted from the embedded FBG sensor should reflect the straining condition of the host structure. This paper presents a theoretical model to evaluate the differential strains between the bare fibre and host material with different adhesive thickness and modulus of the protective coating of the embedded FBG sensor.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.544-551
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• 2006

The sealing technique between a glass tube and a copper heat pipe in an evacuated tube solar collector is studied. In this study two different sealing techniques, such as flame method and furnace firing, are examined. After the sealing of a copper to a glass, the oxidation state of the copper and its bonding morphology were examined by SEM and XRD. Its oxidation was retarded by coating of borate solution on the copper, and $Cu_2O(cuprite)$ turned into CuO(tenorite) with increase in a firing temperature and firing time. Porous structure was found in the oxide layer when CuO formed. The best sealing morphology was observed when the thickness of the oxidation layer was less than $20{\mu}m$. The sealing technique performed in a furnace was promising and the satisfactory result was obtained when the sample was fired at $950^{\circ}C$ for 5 min under $N_2$ atmosphere. Annealing procedure is recommended to remove the stress left at the bonding zone.

• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.116-121
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• 2010

The Mg-Zn-RE alloy cladded with the thin Al1050 sheet was fabricated by means of a roll bonding process at $280^{\circ}C$.Microstructures and mechanical properties of the clad sheets were investigated. After heat treatment at $230^{\circ}C$ for 30 min, an Mg-rich diffusion layer with about $2{\mu}m$ in thickness was developed at the Mg and Al interface. Tensile tests were carried out in a temperature range up to $300^{\circ}C$. The clad sheet exhibits superior elongation to failure not only at room temperature but also at elevated temperatures compared with those of the Mg alloy sheet. For the deformed specimens, interface debonding does not occur and the diffusion layer shows only a few cracks.

• Korean Journal of Materials Research
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• v.32 no.2
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• pp.72-79
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• 2022

A cold roll-bonding process using AA1050, AA5052 and AA6061 alloy sheets is performed without lubrication. The roll-bonded specimen is a multi-layer complex aluminum alloy sheet in which the AA1050, AA5052 and AA6061 sheets are alternately stacked. The microstructural evolution with the increase of annealing temperature for the roll-bonded aluminum sheet is investigated in detail. The roll-bonded aluminum sheet shows a typical deformation structure in which the grains are elongated in the rolling direction over all regions. However, microstructural evolution of the annealed specimen is different depending on the type of material, resulting in a heterogeneous microstructure in the thickness direction of the layered aluminum sheet. Complete recrystallization occurs at 250 ℃ in the AA5052 region, which is lower by 100K than that of the AA1050 region. Variation of the misorientation angle distribution and texture development with increase of annealing temperature also differ depending on the type of material. Differences of microstructural evolution between aluminum alloys with increase of annealing temperature can be mainly explained in terms of amounts of impurities and initial grain size.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.170-176
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• 2017

EPIG (Electroless Pd/immersion Au) process was studied to replace ENIG (electroless Ni/immersion Au) and ENEPIG (electroless Ni/electroless Pd/immersion Au) processes for bump surface treatment used in high reliable flip chip packages. The palladium and gold layers formed by EPIG process were uniform with thickness of 125 nm and 34.5 nm, respectively. EPAG (Electroless Pd/autocatalytic Au) also produced even layers of palladium and gold with the thickness of 115 nm and 100 nm. TEM results exhibited that the gold layer in EPIG surface had crystalline structure while the palladium layer was amorphous one. After annealing at 250 nm, XPS analysis indicated that the palladium layer with thickness more than 22~33 nm could act as a diffusion barrier of copper interconnects. As a result of comparing the chip shear strength obtained from ENIG and EPIG surfaces, it was confirmed that the bonding strength was similar each other as 12.337 kg and 12.330 kg, respectively.