• Journal of the Korea institute for structural maintenance and inspection
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• v.12 no.1
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• pp.101-108
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• 2008

This study is to examine bond strength of beam reinforced with GFRP rebar under 4-point fatigue bending test by adopting BRITISH STANDARD. The variables were made to have bonding length of 5times(5db), and 15times(15db) of the nominal diameter of GFRP rebar and were done to analyze the relationship between the bonding strength and the slip. In the result of the test, pull-out failure was dominant in the 5db specimen, patterns of the pull-out failure and concrete shear failure appeared in the 15db specimen showed only concrete shear failure at the end of bonding length. Therefore, The strain development consist of three different stage : A rapid increases form 0 to about 10% of total fatigue life. A uniform increases form 10% to about 70%~90%. Then a rapid increases until failure, if failure takes place. It seems that stress level has not influence on the secant modules of elasticity. And also according to the outcome the existing strengthening method came out to be the most superiority in S-N graphs.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.312-312
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• 2011

In SiH4/H2 discharge for growth process of hydrogenated amorphous silicon (a-Si:H), silane polymers, produced by SiH2 + Sin-1H2n ${\rightarrow}$ SinH2n+2, have no reactivity on the film-growing surface. However, under the SiH2 rich condition, high silane reactive species (HSRS) can be produced by electron collision to silane polymers. HSRS, having relatively strong reactivity on the surface, can react with dangling bond and form Si-H2 networks which have a close correlation with photo-induced degradation of a-Si:H thin film solar cell [1]. To find contributions of suggested several external plasma conditions (pressure, frequency and ratio of mixture gas) [2,3] to suppressing productions of HSRS, some plasma characteristics are studied by numerical methods. For this study, a zero-dimensional global model for SiH4/H2 discharge and a one-dimensional particle-in-cell Monte-Carlo-collision model (PIC-MCC) for pure SiH4 discharge have been developed. Densities of important reactive species of SiH4/H2 discharge are observed by means of the global model, dealing 30 species and 136 reactions, and electron energy probability functions (EEPFs) of pure SiH4 discharge are obtained from the PIC-MCC model, containing 5 charged species and 15 reactions. Using global model, SiH2/SiH3 values were calculated when pressure and driving frequency vary from 0.1 Torr to 10 Torr, from 13.56 MHz to 60 MHz respectively and when the portion of hydrogen changes. Due to the limitation of global model, frequency effects can be explained by PIC-MCC model. Through PIC-MCC model for pure SiH4, EEPFs are obtained in the specific range responsible for forming SiH2 and SiH3: from 8.75 eV to 9.47 eV [4]. Through densities of reactive species and EEPFs, polymerization reactions and production of HSRS are discussed.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.406-412
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• 2003

FT-IR and thermography were used to investigate the infrared radiation characteristic of SiO$_2$ film and SiO$_2$/Fe$_2$O$_3$film coated on aluminum. Through FT-TR spectrum, SiO$_2$film showed high infrared absorption in accordance with the stretching vibration of Si-O-Si, and as$ Fe_2$$O_3$was mixed additional absorption band appeared resulting from the stretching vibration of Fe-O at $590cm^{-1}$ and the bond of Si-O-Fe at $900 cm^{-1}$ The two kinds of film measured by the integration method and the reflective method coincided with each other in the wavelength area of infrared absorption and radiation, and corresponded well with Kirchhoff's law as the infrared emissivity is high in wavelength where infrared absorption rate is high. The emissivity of $SiO_2$ film was 0.65 and that of $SiO_2$/Fe$_2$$O_3$film was 0.77, so the addition of$ Fe_2$$O_3$ raised the infrared emissivity by approximately 13%.$ SiO_2$$Fe_2$$O_3$ film is efficient as an infrared radiator at below $100^{\circ}C$. The temperature of heat radiation after 7 minutes was 117$^{\circ}C$ in aluminum plate and $155^{\circ}C$ in $SiO_2$$Fe_2$$O_3$ film, $38^{\circ}C$ higher than the former.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2007.04a
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• pp.208-211
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• 2007

Separation Devices have two functions. These two functions are to bond and to separate two bodies. This paper is about separation devices which use explosives to separate their bodies. Explosive bolt is separated with two bodies when the explosives in the body detonated. The good things of explosive bolt are that it has simple operational system and it is made of few parts. But it has side effects; fragment and pyre-shock. To avoid these side effects gas expansion separation(GES) bolt and pressure cartridge actuation separation(PAS) devices are invented. These use pressure to separate their bodies. The pressure is generated when explosives are burned. But the sizes of PAS devices are bigger than explosive bolts. And GES bolt has a mechanically lower bonding ability than that of explosive bolt. When you design separation devices, it is recommended to know operational system and characteristics of separation devices, to design best one.

• Polymer(Korea)
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• v.26 no.1
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• pp.28-36
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• 2002

In this study, we synthesized novel thiophene derivatives by the protection of the carboxyl group of 3-thiophene acetic acid with differently substituted benzyl groups. While 3-thiophene acetic acid is not electro-polymerizable, the modified monomers can be easily electro-oxidized to form stable electroactive polymers. The protecting groups can be easily removed in the solid state and the desired reactive carboxyl group can be introduced on the polymer surface. SEM observations show that obtained polymer films show a very good film surface and homogeneous morphology on the Pt electrode. After introduction of macromonomer, FT-IR spectrum shows new absorption bands at 1650 and $1550 cm^{-1}$, which is consistent with the formation of an amide bond. Electroactivity measurements were examined by cyclic voltammogram(CV). These polymers showed the characteristic electrochemical behavior of poly(3-alkylthiophene)s with reversible redox transition in the range of 0.7-0.9 V.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.6
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• pp.141-147
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• 2008

This paper describes the design of frequency down converting Mixer in the receiver to use compound semiconductor and CMOS product process. The basic theory and structure of frequency down converting Mixer is surveyed, and we design mixer circuit with active balun which use the compound semiconductor and CMOS process. This mixer convert a single ended signal to differential signal at input port of RF and LO instead of matching circuit to get dual band balanced mixer structure and characteristic broadband. This designed mixer has a conversion gain $-1{\sim}-6[dB]$ at $2{\sim}6[GHz]$ bandwidths. However, the simulation of the designed mixer with active balun has the result of a 7[dB] conversion gain for -2[dBm] LO input power and -10[dBm] input P1[dB] at 5.8[GHz].

• Steel and Composite Structures
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• v.34 no.2
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• pp.261-277
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• 2020

The main objective of this research paper is to consider vibration analysis of vacancy defected graphene sheet as a nonisotropic structure via molecular dynamic and continuum approaches. The influence of structural defects on the vibration of graphene sheets is considered by applying the mechanical properties of defected graphene sheets. Molecular dynamic simulations have been performed to estimate the mechanical properties of graphene as a nonisotropic structure with single- and double- vacancy defects using open source well-known software i.e., large-scale atomic/molecular massively parallel simulator (LAMMPS). The interactions between the carbon atoms are modelled using Adaptive Intermolecular Reactive Empirical Bond Order (AIREBO) potential. An isogeometric analysis (IGA) based upon non-uniform rational B-spline (NURBS) is employed for approximation of single-layered graphene sheets deflection field and the governing equations are derived using nonlocal elasticity theory. The dependence of small-scale effects, chirality and different defect types on vibrational characteristic of graphene sheets is investigated in this comprehensive research work. In addition, numerical results are validated and compared with those achieved using other analysis, where an excellent agreement is found. The interesting results indicate that increasing the number of missing atoms can lead to decrease the natural frequencies of graphene sheets. It is seen that the degree of the detrimental effects differ with defect type. The Young's and shear modulus of the graphene with SV defects are much smaller than graphene with DV defects. It is also observed that Single Vacancy (SV) clusters cause more reduction in the natural frequencies of SLGS than Double Vacancy (DV) clusters. The effectiveness and the accuracy of the present IGA approach have been demonstrated and it is shown that the IGA is efficient, robust and accurate in terms of nanoplate problems.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• Journal of the Korean Applied Science and Technology
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• v.35 no.4
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• pp.1031-1037
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• 2018

The formation of a complex between PVP or HPC and iodine was indicated by a red shift in the tri-iode band while PVA-iodine complex showed its characterized band around 500 nm in pure aqueous media. Addition of surfactant SDS resulted in a disapperance of the characteristic blue color of the PVA-iodine complex indicating that the complex is not formed in aqueous surfactant media. However in case of PVP or HPC, presence of the monomers of SDS favored the complex formation but in higher concentration, the micelles of SDS decreased the complex. Complexation was found to increase with increasing content of n-propanol in the system since n-propanol inhibits the formation of gels or microgels in the polymer solution. But in case of PVA-iodine complex, addition of n-propanol led to conversion of bigger polyiodides into smaller ones, which is indicative of increased intermolecular hydrogen bond interaction between propanol and PVA effecting a decrease in the PVA aggregate space.

• BMB Reports
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• v.38 no.1
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• pp.115-119
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• 2005

Replacement of valine by tryptophan or tyrosine at position $\alpha$96 of the $\alpha$ chain ($\alpha$96Val), located in the ${\alpha}_1{\beta}_2$ subunit interface of hemoglobin leads to low oxygen affinity hemoglobin, and has been suggested to be due to the extra stability introduced by an aromatic amino acid at the $\alpha$96 position. The characteristic of aromatic amino acid substitution at the $\alpha$96 of hemoglobin has been further investigated by producing double mutant r Hb ($\alpha$42Tyr$\rightarrow$ Phe, $\alpha$96Val$\rightarrow$Trp). r Hb ($\alpha$42Tyr$\rightarrow$Phe) is known to exhibit almost no cooperativity in binding oxygen, and possesses high oxygen affinity due to the disruption of the hydrogen bond between $\alpha$42Tyr and $\beta$99Asp in the ${\alpha}_1{\beta}_2$ subunit interface of deoxy Hb A. The second mutation, $\alpha$96Val$\rightarrow$Trp, may compensate the functional defects of r Hb ($\alpha$42Tyr$\rightarrow$Phe), if the stability due to the introduction of trypophan at the $\alpha$96 position is strong enough to overcome the defect of r Hb ($\alpha$42Tyr$\rightarrow$Phe). Double mutant r Hb ($\alpha$42Tyr$\rightarrow$Phe, $\alpha$96Val$\rightarrow$Trp) exhibited almost no cooperativity in binding oxygen and possessed high oxygen affinity, similarly to that of r Hb ($\alpha$42Tyr$\rightarrow$Phe). $^1$H NMR spectroscopic data of r Hb ($\alpha$42Tyr$\rightarrow$Phe, $\alpha$96Val$\rightarrow$Trp) also showed a very unstable deoxy-quaternary structure. The present investigation has demonstrated that the presence of the crucible hydrogen bond between $\alpha$42Tyr and $\beta$99Asp is essential for the novel oxygen binding properties of deoxy Hb ($\alpha$96Val$\rightarrow$Trp).