• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.845-848
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• 2009

Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronics circuits. Theyare also caleed power devices or when used in integrated circuits, called power ICs. Some common power devices are the power diode, thyristor, power MOSFET and IGBT (insulated gate bipolar transistor). A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.5
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• pp.857-864
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• 2020

The multi-functional VoIP phone supports the Ethernet protocol in the TIPS(: Tactical IP Switch), which is one of the sub-systems of the tactical information and communication system (TICN). It provides secured voice / video calls in conjunction with VoIP exchanges and supports differential services such as multi-party calls and command functions. In this paper, improving methods have been proposed to reduce power supply defects in the field of multi-functional VoIP phones. The power supply part was improved by applying TVS of the output voltage inlet of the dedicated adapter of the multi-functional VoIP phone, TVS of the PoE module input, adding blocking diodes, and adding DC / DC converters behind the poly-switch. Also, functional and environmental tests were performed to verify the validity of the proposed methods.

• Macromolecular Research
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• v.14 no.3
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• pp.343-347
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• 2006

A novel, blue light-emitting polymer, poly(phenyl-9,9-dioctyl-9',9'dihexanenitrile)fluorene (PPFC6N), containing an alkyl and cyano group in the side chain, was synthesized by Suzuki polymerization and characterized. The polymer structure was confirmed by $^1H-NMR$. The number average molecular weight and the weight average molecular weight of the obtained polymer were 9,725 and 9,943 respectively. The resulting polymer was thermally stable with a glass transition temperature ($T_g$) of $93^{\circ}C$, and was easily soluble in common organic solvents such as THF, toluene, chlorobenzene and chloroform. The HOMO and LUMO energy levels of the polymer were revealed as 5.8 and 2.88 eV by cyclic voltammetry study, respectively. The ITO/PEDOT:PSS (40 nm)/PPFC6N (80 m)/LiF (1 nm)/Al (150 nm) device fabricated from the polymer emitted a PL spectrum at 450 nm and showed a real blue emission for pure PPFC6N in the EL spectrum. When t-butyl PBD was introduced as a hole blocking layer, the device performance was largely improved and the EL spectrum was slightly shifted toward deep blue. The device with PPFC6N containing t-butyl PBD layer showed the maximum luminance of 3,200 $cd/m^2$ at 9.5 V with a turnon voltage of 7 V.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.4
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• pp.2037-2042
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• 2013

A TCO-less palladium (Pd) catalytic layer on the glass substrate was assessed as the counter electrode (CE) in a dye sensitized solar cell (DSSC) to confirm the stability of Pd with the $I^-/I_3{^-}$electrolyte on the DSSC performance. A 90nm-thick Pd film was deposited by a thermal evaporator. Finally, DSSC devices of $0.45cm^2$ with glass/FTO/blocking layer/$TiO_2$/dye/electrolyte(10 mM LiI + 1 mM $I_2$ + 0.1 M $LiClO_4$ in acetonitrile solution)/Pd/glass structure was prepared. We investigated the microstructure and photovoltaic property at 1 and 12 hours after the sample preparation. The optical microscopy, field emission scanning electron microscopy (FESEM), cyclic voltammetry measurement (C-V), and current voltage (I-V) were employed to measure the microstructure and photovoltaic property evolution. Microstructure analysis showed that the corrosion by reaction between the Pd layer and the electrolyte occurred as time went by, which led the decrease of the catalytic activity and the efficiency. I-V result revealed that the energy conversion efficiency after 1 and 12 hours was 0.34% and 0.15%, respectively. Our results implied that we might employ the other non-$I^-/I_3{^-}$electrolyte or the other catalytic metal layers to guarantee the long term stability of the DSSC devices.

• 전자공학회논문지 IE
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• v.43 no.4
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• pp.1-7
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• 2006

In this paper, two types of blue organic light-emitting device were designed. We have analyzed the characteristics of Type I device without a hole blocking layer, and analyzed the characteristics of Type II device using a hole blocking layer of BCP or BAlq materials with 30 ${\AA}$ thickness. We obtained the ITO having the work function value of 5.02 eV using $N_2$ plasma treatment method with the plasma power 200 W. Type I device structure was ITO/2-TNATA/$\alpha$-NPD/DPVBi/$Alq_3$/LiF/Al:Li, and type II device structure was ITO/2-TNATA/$\alpha$-NPD/DPVBi/HBL/$Alq_3$/LiF/Al:Li. We have analyzed the characteristics of Type I and Type II device. The characteristics of the device were most efficiency on occasion of using a hole blocking layer of BAlq material with 30 ${\AA}$ thickness. Current density was 226.75 $mA/cm^2$, luminance was 10310 $cd/m^2$, Current efficiency was 4.55 cd/A, power efficiency was 1.43 lm/W at an applied voltage of 10V. The maximum EL wavelength of the fabricated blue organic light-emitting device was 456nm. The full-width at half-maximum (FWHM) for the EL spectra was 57nm. CIE color coordinates were x=0.1438 and y=0.1580, which was similar to NTSC deep-blue color with CIE color coordinates of x=0.14 and y=0.08.

• Journal of IKEEE
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• v.11 no.4
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• pp.158-164
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• 2007

In this study, three types of a novel Trench IGBTs(Insulated Gate Bipolar Transistor) are proposed. The first structure has P-collector which is isolated by $SiO_2$ layer to enhance anode-injection-efficiency and enable the device to have a low on-state voltage drop(Von). And the second structure has convex P-base region between both gates. This structure may be effective to distributes electric-field crowded to gate edge. So this structure can have higher breakdown voltage(BV) than conventional trench-type IGBT(TIGBT). The process and device simulation results show improved on-state, breakdown and switching characteristics in each structure. The first one was presented lower on state voltage drop(2.1V) than that of conventional one(2.4V). Also, second structurehas higher breakdown voltage(1220V) and faster turn off time(9ns) than that of conventional structure. Finally, the last one of the proposed structure has combined the two structure (the first one and second one). This structure has superior electric characteristics than conventional structure about forward voltage drop and blocking capability, turnoff characteristics.

• ETRI Journal
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• v.35 no.3
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• pp.425-430
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• 2013

In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage ($BV_{DS}$) and on-state current ($I_{D,MAX}$), are strongly dependent on the gate configuration and its bias condition. In the nitride_RSO process, the thick single insulation layer ($SiO_2$) of a conventional RSO power MOSFET is changed to a multilayered insulator ($SiO_2/SiN_x/TEOS$). The inserted $SiN_x$ layer can create the selective etching of the TEOS layer between the gate oxide and poly-Si layers. After additional oxidation and the poly-Si filling processes, the gates are automatically separated into three parts. Moreover, to confirm the variation in the electrical properties of TGRMOSs, such as $BV_{DS}$ and $I_{D,MAX}$, simulation studies are performed on the function of the gate configurations and their bias conditions. $BV_{DS}$ and $I_{D,MAX}$ are controlled from 87 V to 152 V and from 0.14 mA to 0.24 mA at a 15-V gate voltage. This $I_{D,MAX}$ variation indicates the specific on-resistance modulation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.167-173
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• 2017

In this paper, the characterization of the vertical position of trapped charges in the charge-trap flash (CTF) memory is performed in the novel CTF memory cell with gate-all-around structure using technology computer-aided design (TCAD) simulation. In the CTF memories, injected charges are not stored in the conductive poly-crystalline silicon layer in the trapping layer such as silicon nitride. Thus, a reliable technique for exactly locating the trapped charges is required for making up an accurate macro-models for CTF memory cells. When a programming operation is performed initially, the injected charges are trapped near the interface between tunneling oxide and trapping nitride layers. However, as the program voltage gets higher and a larger threshold voltage shift is resulted, additional charges are trapped near the blocking oxide interface. Intrinsic properties of nitride including trap density and effective capture cross-sectional area substantially affect the position of charge centroid. By exactly locating the charge centroid from the charge distribution in programmed cells under various operation conditions, the relation between charge centroid and program operation condition is closely investigated.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.411-418
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• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.

• The Korean Journal of Physiology and Pharmacology
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• v.21 no.2
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• pp.169-177
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• 2017

Lamotrigine is an antiepileptic drug widely used to treat epileptic seizures. Using whole-cell voltage clamp recordings in combination with a fast drug application approach, we investigated the effects of lamotrigine on 5-hydroxytryptamine $(5-HT)_3$ receptors in NCB-20 neuroblastoma cells. Co-application of lamotrigine ($1{\sim}300{\mu}M$) resulted in a concentration-dependent reduction in peak amplitude of currents induced by $3{\mu}m$ of 5-HT for an $IC_{50}$ value of $28.2{\pm}3.6{\mu}M$ with a Hill coefficient of $1.2{\pm}0.1$. These peak amplitude decreases were accompanied by the rise slope reduction. In addition, $5-HT_3$-mediated currents evoked by 1 mM dopamine, a partial $5-HT_3$ receptor agonist, were inhibited by lamotrigine co-application. The $EC_{50}$ of 5-HT for $5-HT_3$ receptor currents were shifted to the right by co-application of lamotrigine without a significant change of maximal effect. Currents activated by 5-HT and lamotrigine co-application in the presence of 1 min pretreatment of lamotrigine were similar to those activated by 5-HT and lamotrigine co-application alone. Moreover, subsequent application of lamotrigine in the presence of 5-HT and 5-hydroxyindole, known to attenuate $5-HT_3$ receptor desensitization, inhibited $5-HT_3$ receptor currents in a concentration-dependent manner. The deactivation of $5-HT_3$ receptor was delayed by washing with an external solution containing lamotrigine. Lamotrigine accelerated the desensitization process of $5-HT_3$ receptors. There was no voltage-dependency in the inhibitory effects of lamotrigine on the $5-HT_3$ receptor currents. These results indicate that lamotrigine inhibits $5-HT_3$-activated currents in a competitive manner by binding to the open state of the channels and blocking channel activation or accelerating receptor desensitization.