• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 F
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• pp.1928-1930
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• 1998

This paper proposes a new snubber circuit for multilevel inverter and converter. The snubber circuit makes use of Undeland snubber as basic snubber unit and can be regarded as a generalized Undeland snubber. The proposed snubber keeps such good features as fewer number of components, improved efficiency due to low loss snubber, capability of clamping overvoltage across main switching devices, and no unbalance problem of blocking voltage. Furthermore, the proposed concept of constructing a snubber circuit for multilevel inverter and converter can apply to any kind of basic snubber unit such as Holtz nondissipative snubber, McMurray efficient snubber, Lauritzen lossless snubber, etc which have been utilized for two-level inverter.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.230-231
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• 2001

Silica glass is a core material for optical fiber in optical telecommunications, but its centrosymmetry eliminates the second order nonlinearity. But it is experimentally well known that the space charge polarization induces the Second Harmonic Generation (SHG) when a strong DC voltage is applied to silica glass for a long period time with metal blocking electrodes. In this research, a theoretical calculation of the nonlinear optical property caused by the space charge polarization is performed, and a model of a numerical analysis to predict the small change in nonlinear optical property as functions of time and space is provided.

• ETRI Journal
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• 제18권3호
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• pp.181-193
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• 1996

A blue light emitting device has been successfully fabricated using a polymer with regulated conjugation length containing trimethylsilyl substituted phenylenevinylene units. Electroluminescence from the device has an emission maximum at 470 nm. The device shows typical diode characteristics with operating voltage of 20 V and the light becomes visible at a current density of less than $0.5;mA/cm^2$. The electroluminescence spectrum is virtually identical with the photoluminescence spectrum, indicating that the radiation mechanisms are the same for both. A light emitting device using the blend of a large band gap polymer and a small band gap polymer was also fabricated. Light emission from the small band gap polymer shows much improved quantum efficiency, but there is no light emission from the large band gap polymer. Quantum efficiency of the blend increases up to about two orders of magnitude greater than that of the small band gap polymer with increasing proportion of the large band gap polymer. The improvement in quantum efficiency is interpreted in terms of exciton transfer and the hole blocking behaviour of the large band gap polymer. Finally, we have fabricated a patterned flexible light emitting device using the high quantum efficiency polymer blend system.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.106-109
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• 2004

A high-density 3-transistor cell one-time programmable (OTP) ROM array using standard CMOS Gate-Oxide antifuse (AF) is proposed, fabricated, and characterized with $0.18{\mu}m$ CMOS process. The proposed non-volatile high-density OTP ROM is composed of an array of 3-T OTP cells with the 3-T consisting of an nMOS AF, a high voltage (HV) blocking transistor, and a cell access transistor, all compatible with standard CMOS technology.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 A
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• pp.552-554
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• 2003

The second harmonic component is commonly used for blocking differential relay in power transformers. However, it is difficult to distinguish between inrush and internal winding fault with differential current protective relaying. This paper proposed a new method using Nuro-Fuzzy System based on HCM(Hard C-Means). The proposed system is more objective and systematic than existing model. The data used in input are 3-phase primary voltage and fundamental harmonic of differential current. Various states of transformer are simulated using BCTRAN and HYSDAT of EMTP. As a result of the application of algorithm in various cases, the exact discrimination between internal winding fault and inrush is performed.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2005년도 전력전자학술대회 논문집
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• pp.173-175
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• 2005

Malfunction of Klippon relay in Cheju-Haenam HVDC system has been caused by the inflow of high voltage arc. In this paper, we have studied on the theoretical examination and data analysis of Klippon relay, and the countermeasures against the problems were suggested according to their causes. Grounding problem in Klippon relay is removed by one-point earth connection and by modification of grounding circuit. The effects of over current surge was removed by attaching blocking diodes by series In Klippon relay to remove surge input in Klippon relay's mercury contact. The problem of Induced overvoltage by 86re1ay excitation coil, was removed by attaching Free-wheeling diode in parallel with the excitation coil of Lock-out relay.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1309-1310
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• 2006

사이리스터 소자의 신뢰성은 HVDC, SVC, FACTs와 같은 대용량 전력 시스템의 신뢰성에 많은 영향을 미친다. 따라서 사이리스터 소자의 신뢰성을 분석하는 것은 시스템의 안정적인 운용과 신뢰성의 확보에 필수적이다. 본 논문에서는 장시간동안 전압 및 열을 인가하여 사이리스터를 가속열화 시켰을 때 사이리스터 소자의 차단전압 및 누설전류 특성의 변화에 대해 실험을 통해 분석하였다. 가속열화 시험에는 14개의 사이리스터가 사용되었고, 1000V, $100^{\circ}C$의 조건에서 가속열화를 진행하였으며, 7일에서 10일의 간격으로 소자의 누설전류 및 차단전압 특성을 측정하여 초기 특성과 비교 분석하였다.

• 한국정보통신학회논문지
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• 제7권2호
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• pp.269-275
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• 2003

저전압 프로그래밍이 가능한 플래시메모리를 실현하기 위하여 0.35$\mu\textrm{m}$ CMOS 공정 기술을 이용하여 터널링산화막, 질화막 그리고 블로킹산화막의 두께가 각각 2.4nm, 4.0nm, 2.5nm인 SONOS 트랜지스터를 제작하였으며, SONOS 메모리 셀의 면적은 1.32$\mu$$m^2$이었다. 질화막의 두께를 스케일링한 결과, 10V의 동작 전압에서 소거상태로부터 프로그램상태로, 반대로 프로그램상태에서 소거상태로 스위칭 하는데 50ms의 시간이 필요하였으며, 최대 메모리윈도우는 1.76V이었다. 그리고 질화막의 두께를 스케일링함에도 불구하고 10년 후에도 0.5V의 메모리 윈도우를 유지하였으며, 105회 이상의 프로그램/소거 반복동작이 가능함을 확인하였다. 마지막으로 부유게이트 소자에서 심각하게 발생하고있는 과도소거현상이 SONOS 소자에서는 나타나지 않았다.

• The Korean Journal of Physiology and Pharmacology
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• 제16권5호
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• pp.343-348
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• 2012

Blocking or regulating $K^+$ channels is important for investigating neuronal functions in mammalian brains, because voltage-dependent $K^+$ channels (Kv channels) play roles to regulate membrane excitabilities for synaptic and somatic processings in neurons. Although a number of toxins and chemicals are useful to change gating properties of Kv channels, specific effects of each toxin on a particular Kv subunit have not been sufficiently demonstrated in neurons yet. In this study, we tested electro-physiologically if heteropodatoxin2 ($HpTX_2$), known as one of Kv4-specific toxins, might be effective on various $K^+$ outward currents in CA1 neurons of organotypic hippocampal slices of rats. Using a nucleated-patch technique and a pre-pulse protocol in voltage-clamp mode, total $K^+$ outward currents recorded in the soma of CA1 neurons were separated into two components, transient and sustained currents. The extracellular application of $HpTX_2$ weakly but significantly reduced transient currents. However, when $HpTX_2$ was added to internal solution, the significant reduction of amplitudes were observed in sustained currents but not in transient currents. This indicates the non-specificity of $HpTX_2$ effects on Kv4 family. Compared with the effect of cytosolic 4-AP to block transient currents, it is possible that cytosolic $HpTX_2$ is pharmacologically specific to sustained currents in CA1 neurons. These results suggest that distinctive actions of $HpTX_2$ inside and outside of neurons are very efficient to selectively reduce specific $K^+$ outward currents.

• Journal of Information Display
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• 제1권1호
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• pp.42-47
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• 2000

The relationship between driving voltage and the amount of wall charge in the address period of surface discharge type AC Plasma Display Panel has been investigated. The amount of wall charge on each electrode is obtained simultaneously from the current profiles after applying only one addressing discharge pulse. The wall charge $Q_y$ on the scan electrode Y is almost the sum of $Q_x$ on the address electrode X and $Q_z$ on the sustain electrode Z. The $Q_y$ increased with the driving voltage regardless of the kind of electrode, whereas the addressing $T_d$ decreased. The $Q_x$ and $Q_y$ are increased considerably by blocking voltage $V_z$, whereas $Q_x$ is decreased. The $V_z$ dependence of $Q_x$ $Q_y$ and ${\varrho}_z$ in addressing discharge was $-13{\times}10^{-2}$ (pc/$V_z$), and $60{\times}10^{-2}$ ($pc/V_z$) and $70{\times}10^{-2}(pc/V_z)$, respectively.