• The Korean Journal of Physiology and Pharmacology
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• 제23권6호
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• pp.509-517
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• 2019

Escitalopram is one of selective serotonin reuptake inhibitor antidepressants. As an S-enantiomer of citalopram, it shows better therapeutic outcome in depression and anxiety disorder treatment because it has higher selectivity for serotonin reuptake transporter than citalopram. The objective of this study was to determine the direct inhibitory effect of escitalopram on 5-hydroxytryptamine type 3 ($5-HT_3$) receptor currents and study its blocking mechanism to explore additional pharmacological effects of escitalopram through $5-HT_3$ receptors. Using a wholecell voltage clamp method, we recorded currents of $5-HT_3$ receptors when 5-HT was applied alone or co-applied with escitalopram in cultured NCB-20 neuroblastoma cells known to express $5-HT_3$ receptors. 5-HT induced currents were inhibited by escitalopram in a concentration-dependent manner. $EC_{50}$ of 5-HT on $5-HT_3$ receptor currents was increased by escitalopram while the maximal peak amplitude was reduced by escitalopram. The inhibitory effect of escitalopram was voltage independent. Escitalopram worked more effectively when it was co-applied with 5-HT than pre-application of escitalopram. Moreover, escitalopram showed fast association and dissociation to the open state of $5-HT_3$ receptor channel with accelerating receptor desensitization. Although escitalopram accelerated $5-HT_3$ receptor desensitization, it did not change the time course of desensitization recovery. These results suggest that escitalopram can inhibit $5-HT_3$ receptor currents in a non-competitive manner with the mechanism of open channel blocking.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.103-107
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• 2000

The relationships between driving voltage and the wall charge distribution in the address period of surface discharge type AC Plasma Display Panel have been investigated. The quantity of wall charge on each electrode are detected simultaneously from the electrode current after applying only one addressing discharge pulse. The wall charge Qy on the scan electrode Y is nearly the sum of Qx on the address electrode X and Qz on the sustain electrode Z. The Qy increased with the driving voltage regardless of the kind of electrode, whereas the address time Td decreased, Qz and Qy are increased considerably with the blocking voltage Vz, whereas Qx is decreased. The increase rate of Qx, Qy and Qz for increase in Vz was $-13{\times}10^{-2}$ (pc/Vz), and $60{\times}10^{-2}$ (pc/Vz) and $70{\times}10^{-2}$(pc/Vz), respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.285-286
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• 2005

Organic photovoltaic properties were studied in ZnPc/$C_{60}$ heterojunction structure by varying the organic layer thicknesses and exiton blocking layer(EBL). Current density-voltage characteristics of organic photovoltaic cells were measured using Keithley 236 source-measure unit, a 500W xenon lamp (ORIEL 66021) for a light source and Agilent 4294A impedance analyzer in the range of 40 Hz $\sim$ 1 MHz. From the analyses of current-voltage characteristics such as short-circuit current density, open-circuit voltage and power conversion efficiency, optimum thickness of the organic layer were obtained and frequency response such as electrical conductance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.932-934
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• 1999

In this paper, the new IGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The simulations are used in order to investigate the effects of the position, width and concentration of trap injection region using 2D device simulator MEDICI. And, their electrical characteristics are analyze and the optimum design parameters are extracted. As a result of simulation, the turn off time for the proposed LIGBT model A by the trap injection is $0.78{\mu}s$. And, the latch up voltage is 3.4V and forward blocking voltage is 168V which are superior to that of conventional structure. In addition, the proposed model is achieved more efficient in switching time and process effort. Therefore, It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1830-1833
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• 2000

The relationships between driving voltage and the wall charge distribution in the address period of surface discharge type AC Plasma Display Panel have been investigated. The quantity of wall charge on each electrode are detected simultaneously from the electrode current after applying only one addressing discharge pulse. The wall charge Qy on the scan electrode Y is nearly the sum of Qx on the address electrode X and Qz on the sustain electrode 2. The Qy increased with the driving voltage regardless of the kind of electrode, whereas the address time Td decreased, Qz and Qy are increased considerably with the blocking voltage Vz, whereas Qx is decreased. The increase rate of Qx, Qy and Qz for increase in Vz was $-13{\times}10^{-2}$(pc/Vz), and $60{\times}10^{-2}$(pc/Vz) and $70{\times}10^{-2}$(pc/Vz), respectively.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제50권12호
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• pp.624-630
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• 2001

The trend of the regulations on environmental issues are getting tight. Responding to this trend new technologies such as moving electrodes, wide pitch and pulsed power supply are also introduced in the electrostatic precipitator(EP) systems. The introduction of wide pitch and moving electrodes enhances the system performance of the EPs by improving air-flow and by improving the ash reentrainment on rapping. The power supplies for the EPs developed up to date include thyristor-based dc or intermittent type, SMPS(switching mode power supply) type and the pulsed-power supply type. The use of the pulsed ones is known to improve dust-collecting efficiency of high resistivity ash and reduces back corona occurrence in the collecting plate. There are two kinds of pulsed-power supplies; one with pulsed transformers and the other with direct dc switching devices. The latter uses rotary spark gap switches or semiconductor switches. Both have the merits and demerits: the spark gap switches are simple and robust but has short life time, hence, high maintenance cost, whereas the semiconductor switches have long life time but are costly. In this study, A high voltage power supply with superimposing voltage pulse on dc source was developed for EPs. This study describes circuit topology, operating principle of the scheme, and analysis of experimental results on Dong-Hae Power Plant. The pulsed power supply consists of a variable dc power supply with ratings of 60kV, 800mA and pulse generator which is made of high voltage thyristor-diode switch strings, an LC resonant tank and a blocking inductor. The pulse generator generates variable pulse-voltage up to 70kV using a high frequency resonant inverter with a variable dc source. Two prototypes were built and tested on 250MW DongHae power plant to verify the possibility of the commercial use and the normal operation in the transient states.

• 조명전기설비학회논문지
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• 제14권6호
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• pp.18-25
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• 2000

본 논문에서는 과도전압과 전원선 방해파로부터 가전기기틀 안전하게 보호할 수 있는 전자파 대용 단위세대 분전반의 설계 및 제작에 대하에 기술하였다. 제안한 분전반은 바리스터, 캐패시터 및 간선도채의 인덕턴스로 구성한 과도전업 차단장치와 전자파 필터를 내장하고 있다. 시제작한 분전반은 IEC 규격의 조합형 서지 발생장치와 회로밍 분석키를 이용하여, 과도전압에 대한차단특성과 전원선 방해파의 감쇠특성을 평가하였다. 실험 결과로부E] 본 연구에서 제안한 분전빈은 IEC 61000-4-5에 규정한 서지내생기준을 만족하였으며, 150[kHz]-30[MHz] 대역의 전원선 방해파에 대해 20[dB] 이상의 감소효과를 나타내었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.866-867
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• 2011

As part of the green growth, The Green Car has attracted wide attention. Types of the Green Car are Electric Vehicle, Plug-in Hybrid Electric Vehicle, Hybrid Electric Vehicle, Fuel Cell Vehicle and Clean Diesel Vehicle. Of these, The electric vehicle is equipped with the BDU(Battery Disconnecting Unit). BDU is supplying stable battery power and blocking it to protect electrical system of the electric vehicle. The BDU consists of electric components such as current sensor, fuse and pre-charge resistor. These must pass Voltage withstand test, Salt mist test, Thermal shock test, Vibration test and Short-circuit test commonly to verify reliability of the electric components. In addition, The current sensor should be verified whether normal operation. The breaking capacity of fuse should be verified. The durability of pre-charge resistor should be verified by supplying battery power and blocking it repeatedly. The reliability of BDU as well as the electric vehicle is secured by verifying the reliability of electric components. In addition, It will contribute to the acceleration and promotion of Green Car Technology.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.

• The Korean Journal of Physiology and Pharmacology
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• 제1권5호
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• pp.477-484
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• 1997

Intracellular recordings of oscillatory firing (bursting activity) were obtained from Purkinje cells (PCs) in rat cerebellar slices. Apamin inhibited post-burst hyperpolarizations (PBHs) progressively and finally terminated oscillatory firing activity of PCs. Apamin did not affect the amplitude or duration of the after-hyperpolarization (AHP) between spikes within the burst. In the voltage clamp mode, apamin shifted the whole-cell, quasi-steady state I/V relationship in an inward direction and abolished the zero slope resistance (ZSR) region by blocking outward current. Nickel ($Ni^{2+}$) terminated oscillatory activity and also abolished the ZSR region. However, $Ni^{2+}$ did not have progressive blocking action on the post-burst hyperpolarization before it blocked oscillatory activity. $Ni^{2+}$ blocked an inward current at potentials positive to approximately -65 mV, which was responsible for the ZSR region and outward current at more negative potentials. These data indicated that oscillatory activity of PCs is sustained by a balance between a slow $Ni^{2+}$-sensitive inward current and an apamin-sensitive outward current in the region of ZSR of the whole-cell I/V curve.