• ETRI Journal
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• v.26 no.1
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• pp.61-64
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• 2004

We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p-i-n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around $3{\mu}m$. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The $F_t$ and $F_{max}$ of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.63-66
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• 2000

In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.30-32
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• 2001

In this paper, a new silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed to improve the latch-up performance without current path underneath the n$^{+}$ cathode region. The improvement of latch-up performance is verified using the two- dimensional simulator MEDICI and the simulation results on the latch-up current density are 4468 A/cm2 for the proposed LIGBT and 1343 A/$\textrm{cm}^2$ for the conventional LIGBT. The proposed SOI LIGBT exhibits 3 times larger latch-up capability than the conventional SOI LIGBT.T.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.2
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• pp.1-6
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• 2009

The experimental results of exposing IGBT (Insulated Gate Bipolar Transistor) samples to gamma radiation source show shifting of threshold voltages in the MOSFET and degradation of carrier mobility and current gains. At low total dose rate, the shift of threshold voltage is the major contribution of current increases, but for more than some total dose, the current is increased because of the current gain degradation occurred in the vertical PNP at the output of the IGBTs. In the paper, the collector current characteristics as a function of gate emitter voltage (VGE) curves are tested and analyzed with the model considering the radiation damage on the devices for gate bias and different dose. In addition, the model parameters between simulations and experiments are found and studied.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.5
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• pp.33-40
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• 1998

In this paper, a design of current-mode continuous-time filters for low voltage and low frequency applications using complementary bipolar current mirrors is presented. The proposed current-mode filters consist of simple bipolar current mirrors and capacitors and are quite suitable for monolithic integration. Since the design method of the proposed current-mode filters are based on the integrator type of realization, it can be used for a wide range of applications. Since the input impedance of simple bipolar current mirror is small, in this paper, negative feedback amplifier is used to realize is designed by cascade method. The cutoff frequency of the designed filter can be easily tunable by the DC controlling current from 60kHz to 120kHz. The characteristics of the designed current-mode filters are simulated and examined by SPICE using standard bipolar transistor parameters.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.43-51
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• 2023

In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

• Journal of IKEEE
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• v.11 no.1 s.20
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• pp.69-76
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• 2007

This paper presents the design of LVDS (Low-Voltage-Differential-Signaling) transmitter for Gb/s-per-pin operation. The proposed LVDS transmitter is designed using BiCMOS technology, which can be compatible with CMOS technology. To reduce chip area and enhance the robustness of LVDS transmitter, the MOS switches of transmitter are replaced with lateral bipolar transistor. The common emitter current gain($\beta$) of designed bipolar transistor is 20 and the cell size of LVDS transmitter is $0.01mm^2$. Also the proposed LVDS driver is operated at 1.8V and the maximum data rate is 2.8Gb/s approximately In addition, a novel ESD protection circuit is designed to protect the ESD phenomenon. This structure has low latch-up phenomenon by using turn on/off character of P-channel MOSFET and low triggering voltage by N-channel MOSFET in the SCR structure. The triggering voltage and holding voltage are simulated to 2.2V, 1.1V respectively.

• Journal of the Korean Society for Railway
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• v.20 no.3
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• pp.339-348
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• 2017

Power supply for railway cars can be divided into propulsion system power supply and auxiliary power units (APU). The propulsion system power supply is for propulsion of railway cars, and regenerative braking; the APU provides power for the air compressor, lighting, car control and other auxiliary parts. According to high voltage and high current specifications, generally, an insulated-gate bipolar transistor (IGBT) is adopted for the switching component. For appropriate switching operation, a gate driver unit (GDU) is essentially required. In this paper, the technical trends of GDU for railway cars are analyzed and a design consideration for IGBT GDU is described.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.577-580
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• 1998

This paper presents the characteristics of each MOS device and Bipolar device, then investigates about how these devices take effect on BiCMOS inverter from 300K to 470K. The turn-off and Logic swing characteristics of BiCMOS inverter are degraded by the electrical characteristics of the MOS to around 400K, but over that temperature enhanced by the characteristics of the Bipolar transistor.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.971-974
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• 1999

A offset compensated class A bipolar second-generation current conveyor (CCII) for high-accuracy current-mode signal processing was proposed. The CCII adopts two diode-connection transistor between voltage input and voltage output to reduce offset voltage. Experiments show that the proposed CCII has offset voltage of 0.05 ㎷, input impedance of 2 Ω and the 3-㏈ cutoff frequency of 30 MHz when used a voltage amplifier. The power dissipation is 6 ㎷.