• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.273-279
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• 2010

In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.

• Korean Journal of Biological Psychiatry
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• v.14 no.1
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• pp.68-71
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• 2007

Quetiapine is an atypical antipsychotic drug with a benign side effect profile. However, recent studies have reported that thyroid dysfunction is associated with quetiapine treatment. The authors report a patient with DSM-IV bipolar I disorder who developed subclinical hypothyroidism during quetiapine treatment. The patient showed no significant clinical symptoms, but only abnormal thyroid function test findings including antithyroglobulin antibody. The abnormal thyroid function test findings were normalized after discontinuation of quetiapine. The subclinical hypothyroidism developed during quetiapine treatment may be associated with autoimmune process.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.621-622
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• 2006

This paper presents the design of LVDS(Low-Voltage-Differential-Signaling) driver circuit for Gb/s-per-pin operation using BiCMOS process technology. To reduce chip area, LVDS driver's switching devices were replaced with lateral bipolar devices. The designed lateral bipolar transister's common emitter current gain($\beta$) is 20 and device's emitter size is 2*10um. Also the proposed LVDS driver is operated at 2.5V and the maximum data rate is 2.8Gb/s approximately.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.741-746
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• 1986

A novel n-p-n bipolar transistor of which emitter is self-aligned with base contact by polyilicon is developed for using in high speed and high packing density LSI circuits. The emitter of this transistor is separated less than 0.4 \ulcorner with base contact by self-aligh technology, and the emitter feature size is less than 3x5 \ulcorner\ulcorner Because the active region of this transistor is not damaged through all the process, it has excellent electric properties. Using the n-p-n transistors by 3.0\ulcorner design rules, a NTL ring oscillator has 380 ps, a CML ring oscillator has 390ps, and a I\ulcorner ring oscillator has 5.6ns of per-gate minimum propagation delay time.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.411-414
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• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.366-370
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• 2019

In this paper, a single N+ emitter trench gate-type insulated gate bipolar transistor (IGBT) device was studied using T-CAD, in order to achieve a low on-state voltage drop (Vce-sat) and high breakdown voltage, which would reduce power loss and device reliability. Using the simulation, the threshold voltage, breakdown voltage, and on-state voltage drop were studied as a function of the temperature, the length of time in the diffusion process (drive-in) after implant, and the trench gate depth. During the drive-in process, a $20^{\circ}C$ change in temperature from 1,000 to $1,160^{\circ}C$ over a 150 minute time frame resulted in a 1 to 4 V change in the threshold voltage and a 24 to 2.6 V change in the on-state voltage drop. As a result, a 0.5 um change in the trench depth of 3.5 to 7.5 um resulted in the breakdown voltage decreasing from 802 to 692 V.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.441-447
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• 2001

A study on the TiN coating layer in small holes on the Purpose of die-casting dies application has been performed with a PACVD process. For the hole having diameter of 4 mm. the uniform TiN coating layer in the hole to the depth of 20 mm was achieved using DC pulsed power source. To understand the forming mechanism of TiN coating layer, plasma diagnosis on Ti, $N_{2}^{+}$ and A $r^{+}$ emissions was carried out during plasma coaling process by optical emirssion spectroscopy. When the duty ratio was equal or over 50%, the Peaks of Ti,$ N_{2}^{+}$ and A $r^{+}$ emission were obviously observed. While duty ratio was equal or under 28.6%, no peaks for Ti, $N_{2}^{+}$ and A $r^$ were observed and the formation of TiN coating layer was rarely observed. For the coating in 4 mm hole diameter, the coating layer with bipolar process was two times deeper than that with unipolar process.

• Resources Recycling
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• v.31 no.5
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• pp.3-19
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• 2022

Electro-membrane technology is a process for separating and purifying substances in aqueous solution by electric energy using an ion exchange membrane with selective permeability, such as electrodialysis (ED) and bipolar electrodialysis (BMED). Electro-membrane technology is attracting attention as an environmental friendly technology because it does not generate by-products during the process and the recovered base or acid can be reused during the process. In this paper, we investigate the principles of ED and BMED technologies and various characteristics and problems according to the cell configuration. In particular, by investigating and analyzing research cases related to the treatment of waste sodium sulfate (Na₂SO₄), which is generated in large amounts during the metal recovery process.

• Membrane Journal
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• v.33 no.3
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• pp.87-93
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• 2023

Electrodialysis (ED) is essential in separating ions through an ion exchange membrane. The disposal of brine generated from seawater desalination is a primary environmental concern, and its recycling through membrane separation technology is highly efficient. Alkali is produced by several chemical industries such as leather, electroplating, dyeing, and smelting, etc. A high concentration of alkali in the waste needs treatment before releasing into the environment as it is highly corrosive and has a chemical oxygen demand (COD) value. The concentration of calcium and magnesium is almost double in brine and is the perfect candidate for carbon dioxide adsorption, a major environmental pollutant. Sodium hydroxide is essential for the metal carbonation process which, is easily produced by the bipolar membrane electrodialysis process. Various strategies are available for its recovery, like reverse osmosis (RO), nanofiltration (NF), ultrafiltration (UF), and ED. This review discusses the ED process by ion exchange membrane for alkali recovery are discussed.

• Membrane Journal
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• v.17 no.3
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• pp.210-218
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• 2007

CEDI-BPM(Continuous Electrodeionization-Bipolar Membrane) has advantages due to high ion permselectivity through ion exchange membranes and the production of $H^+$ and $OH^-$ ions on the bipolar membrane surfaces for regeneration of ion exchange resin during electrodeionization operation. In this study, hardness materials were removed by the CEDI-BPM without scale formation and the ion exchange resins were electrically regenerated during the operation. The adsorption characteristic of ion exchange resin surface, the influence of flow rate on the hardness removal and electric regeneration were investigated in the study. The removal efficiency of Ca was higher than that of Mg in the CEDI-BPM, which was related to the high adsorption capacity of Ca on the cation exchange resin. With increasing flow rate, the flux of Ca and Mg was enhanced by the permselectivity of a cation exchange membrane. In the electric regeneration of CEDI-BPM, it was shown that the regeneration efficiency was higher with a lower regeneration potential applied between cathode and anode.