• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.2 s.173
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• pp.355-361
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• 2000

In this study, active control magnetic actuator for reducing vibration of rotor system is performed. Identification, modeling, simulation, control system design, and evaluation of active magnetic damper system have been researched. Power amplifier modeling, connected magnetic actuator and augmented by system identification, is included to establish a magnetic damper simulation which provides close performance correspondence to the physical plant. A magnetic actuator, digital controller using DSP(Digital Signal Processor), and bipolar operational power supply/amplifiers are developed to show the effectiveness of reducing rotor vibration. Also the curve fitting procedure to obtain the transfer function of frequency dependent components is developed. Two kinds of test are executed as sliding and oil bearing. Results presented in this paper will provide a well-defined technical parameters in designing magnetic damper system for the proposed rotor.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.64-70
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• 1994

In this paper, we inverstigated how a parricular internal inverter circuit, which is located far from the input protection in CMOS DRAM, can be easily damaged by external ESD stress, while the protection circuit remains intact. It is shown in a mega bit DRAM that the internal circuit can be safe from ESD by simply improving the input protection circuit. An inverter, which consists of a relatively small NMOSFET and a very large PMOSFET, is used to speed up DRAMs, and the small NMOSFET is vulnerable to ESD in case that the discharge current beyond the protection flows through the inverter to Vss or Vcc power lines on chip. This internal circuit damage can not be detected by only measuring input leakage currents, but by comparing the standby and on operating current before and after ESD stressing. It was esperimentally proven that the placement of parasitic bipolar transistor between input pad and power supply is very effective for ESD immunity.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.90-91
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• 2017

본 논문은 전략광물 탐사를 위한 25kW급 양극성 펄스전원장치에 대하여 기술한다. 고효율 LCC 공진형 컨버터를 적용한 DC/DC 전력변환 회로부와 펄스를 발생시키기 위한 풀 브릿지 기반의 양방향 펄스 스위칭부로 구성된 500V, 12.5A 단위모듈을 설계하고, 4개의 모듈을 직병렬 구성하여 탐사 방식에 따라 요구되는 고전압 저전류(2kV, 12.5A) 혹은 저전압 대전류(500V, 50A) 동작이 가능한 전략광물 탐사용 펄스전원장치를 개발한다. 본 논문에서는 공진회로, 변압기 등 단위모듈의 상세설계에 대하여 기술하고, 시뮬레이션 및 실험 결과를 통해 이를 검증한다.

• Journal of Power Electronics
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• v.16 no.2
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• pp.786-797
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• 2016

This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

• ETRI Journal
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• v.27 no.1
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• pp.75-80
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• 2005

This paper addresses a fully-integrated low phase noise X-band oscillator fabricated using a carbon-doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves -127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X-band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a $0.8mm{\times}0.8mm$ die area.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.143-152
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• 2004

A novel low-power wideband bipolar second-generation current conveyors(CCIIs) and its application to universal instrumentation amplifier(UIA) were proposed. The CCII for accuracy voltage or current transfer characteristics and low current input impedance adopted adaptive current bias circuit into conventional class Ab CCII. The UIA consists of only two CCIIs and four resistors. Three instrumentation function of the UIA can be realized by selection of input signals and resistors. The simulation results show that the CCII has input impedance of 2.0$\Omega$ and the voltage gain of 60㏈ for frequency range from 0 to 50KHz when used as a voltage amplifier. The CCII has also good characteristics of current follower for current range from -100㎃ to ＋100㎃. The simulation results show that the UIA has three instrumentation amplifier functions without resistor matching. The UIA has the voltage gain of 40㏈ for frequency range from 0 to 100KHz when used as a fully-differential instrumentation amplifier. The power dissipations of the CCII and the UIA are 0.75㎽ and 1.5㎽ at supply voltage of $\pm$2.5V, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.11
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• pp.48-56
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• 2011

Novel class-A bipolar current conveyor($CCII{\pm}$) with differential current output and its application to output current controllable CCII+ for electronic tuning systems are designed. The $CCII{\pm}$ is consists of conventional CCII+ and complementary cross current sources. The CCII+ with controllable the output current consists of the $CCII{\pm}$ and a current gain amplifier with single-ended current output. The simulation result shows that the $CCII{\pm}$ has current input impedance of $1.9{\Omega}$ and a good linearity for voltage and current follower. The proposed CCII+ has 3-dB cutoff frequency of 10MHz for the range over bias control current $100{\mu}A$ to 10mA. The range of output current control is four decade. The power dissipation of the CCII+ is 4.5mW at supply voltage of ${\pm}2.5V$.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.1
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• pp.40-48
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• 2000

1A novel bipolar linear transconductor and its application to operational transconductance amplifier(OTA) for low-voltage low-power signal processing is proposed. The transconductor consists of a npn differential-pair with emitter degeneration resistor and a pnp differential-pair connected to the npn differential-pair in cascade. The bias current of the pnp differential-pair is used with the output current of the npn differential-pair for wide linearity and temperature stability. The OTA consists of the linear transconductor and a translinear current cell followed by three current mirrors. The proposed transconductor has superior linearity and low-voltage low-power characteristics when compared with the conventional transconductor. The experimental results show that the transconductor with transconductance of 50 ${\mu}S$ has a linearity error of less than ${\pm}$0.06% over an input voltage range from -2V to +2V at supply voltage ${\pm}$3V. Power dissipation of the transconductor was 2.44 mW. A prototype OTA with a transconductance of 25 ${\mu}S$ has been built with bipolar transistor array. The linearity of the OTA was same as the proposed transconductor. The OTA circuit also exhibits a transconductance that is linearly dependent on a bias current varying over four decades with a sensitivity of 0.5 S/A.

• Proceedings of the KIEE Conference
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• 2001.10a
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• pp.180-182
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• 2001

Input Current Correction of Single-Phase Buck Rectifier is studied in the paper. To sinusoidal waveform the input current with a near-unity power factor over a wide variety of operating conditions, the output capacitor is operated with voltage reversibility for the supply by arranging the auxiliary diode and power switching device. Then the output voltage is superposed on the input voltage during on time duration of power switching devices in order to minimize the input current distortion caused by the small input voltage when changing the polarity. The tested setup, using two insulated-gate bipolar transistors(IGBT) and a microcomputer, is implemented and IGBT are switched with 20[kHz], which is out of the audible band. Moreover, a rigorous state-space analysis is introduced to predict the operation of the rectifier. The simulated results confirm that the input current can be sinusoidal waveform with a near-unity power factor and a satisfactory output voltage regulation can be achieved.

• Journal of IKEEE
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• v.17 no.3
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• pp.267-274
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• 2013

This paper presents a design of LLC resonant converter IC for LED backlight unit based on PFM/PWM dual-mode feedback. Dual output LLC resonant architecture with a single inductor is proposed, where the master output is controlled by the PFM and slave output is controlled by the PWM. To regulate the master output PFM is used as feedback to control the frequency of the power switch. On the other hand, PWM feedback is used to control the pulse width of the power switch and to regulate the slave output. This chip is fabricated in 0.35um 2P3M BC(Bipolar-CMOS-DMOS) Process and the die area is $2.3mm{\times}2.2mm$. Current consumptions is 26mA from 5V supply.