• Journal of IKEEE
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• v.16 no.3
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• pp.265-273
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• 2012

Data stability and leakage power dissipation have become a critical issue in scaled SRAM design. In this paper, an advanced 8T SRAM cell improving the read and write stability of data storage elements as well as reducing the leakage current in the idle mode is presented. During the read operation, the bit-cell keeps the noise-vulnerable data 'low' node voltage close to the ground level, and thus producing near-ideal voltage transfer characteristics essential for robust read functionality. In the write operation, a negative bias on the cell facilitates to change the contents of the bit. Unlike the conventional 6T cell, there is no conflicting read and write requirement on sizing the transistors. In the standby mode, the built-in stacked device in the 8T cell reduces the leakage current significantly. The 8T SRAM cell implemented in a 130 nm CMOS technology demonstrates almost 100 % higher read stability while bearing 20 % better write-ability at 1.2 V typical condition, and a reduction by 45 % in leakage power consumption compared to the standard 6T cell. The stability enhancement and leakage power reduction provided with the proposed bit-cell are confirmed under process, voltage and temperature variations.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.400-406
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• 2024

Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga2O3 are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.

• Journal of Information Display
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• v.9 no.2
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• pp.1-4
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• 2008

In this study, we investigate the capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) capacitors consisting of pentacene, as an organic semiconductor, and polymeric insulators such as poly(4-vinylphenol) (PVP) orpolystyrene (PS) prepared by spin-coating process, to analyze the interfacial characteristics between pentacene and polymeric insulators. Compared with the device with PS, the MIS capacitor with PVP exhibited a pronounced shift in the flat-band voltage according to the bias sweep direction. This hysteric feature in the C-V characteristics is thought to be attributed to the trapped charges at the interface between pentacene and PVP owing to the hydrophilicity of PVP. From the experimental results, we can conclude that surface polarity of polymeric insulator has a critical effect on the interfacial properties, thereby affecting the bias stability of organic thin-film transistors.

• Journal of Information Display
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• v.11 no.3
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• pp.113-118
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• 2010

The effect of hydrogen in the alumina gate insulator on the bottom gate oxide thin film transistor (TFT) with an InGaZnO film as the active layer was investigated. TFT with more H-containing alumina films (TFT A) fabricated via atomic layer deposition using a water precursor showed higher stability under positive and negative bias stresses than that with less H-containing alumina deposited using ozone (TFT B). While TFT A was affected by the pre-vacuum annealing of GI, which resulted in $V_{th}$ instability under NBS, TFT B did not show a difference after the pre-vacuum annealing of GI. All the TFTs showed negative-bias-enhanced photo instability.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.17-20
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• 2014

We have investigated the effect of temperature and bias current on the stability of the inverse spin-switch effect in Permalloy(Py)/Nb/Permalloy pseudo spin-valves. The inverse spin-switch operates between two orientations of the ferromagnetic moments of Py layers; parallel (ON) and antiparallel-domain (OFF) state. Measuring time scans of the resistance changes between the ON and OFF state, ${\Delta}R_{ON-OFF}$, while alternating magnetic fields between the two states at various temperatures and bias currents, revealed that enhancement of ${\Delta}R_{ON-OFF}$ is a key factor to achieve successful operation of superconducting spin switch.

• Transactions on Electrical and Electronic Materials
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• v.18 no.3
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• pp.141-143
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• 2017

Novel structured thin film transistors (TFTs) of amorphous silicon zinc tin oxide (a-SZTO) were designed and fabricated with a thin metal layer between the source and drain electrodes. A SZTO channel was annealed at $500^{\circ}C$. A Ti/Au electrode was used on the SZTO channel. Metals are deposited between the source and drain in this novel structured TFTs. The mobility of the was improved from $14.77cm^2/Vs$ to $35.59cm^2/Vs$ simply by adopting the novel structure without changing any other processing parameters, such as annealing condition, sputtering power or processing pressure. In addition, stability was improved under the positive bias thermal stress and negative bias thermal stress applied to the novel structured TFTs. Finally, this novel structured TFT was observed to be less affected by back-channel effect.

• Journal of the Korean institute of surface engineering
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• v.31 no.5
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• pp.245-250
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• 1998

There is clear pressing need to reduce bias field(Ha,) used on linear magenetomechanical resonator tag by at least a factor of two to allow low-bias operation near the frequency minimum since reducing Ha causes a dramatic increase in well depth, which implies increased stability. However, this makes it more difficult to maintain tight frequncy specs. It can be solved by a reduction of magnetomechanical coupling(k). We determined from an equivalent circuit model that optimal reduced, k, is near 0.3 Also, We determiend the material properties($lambda_s$, :saturated magenetostriction, $M_s$, and,$H_a$) that give k=0.3. From these evaluations, we suggested that on optimal comosition with adequate mathrial properties is $Fe_{55}Co_{15}Cr_6Nb_2B_{18}Si_4$.

• Journal of Electrochemical Science and Technology
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• v.12 no.3
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• pp.358-364
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• 2021

In this study, an anion exchange membrane water electrolysis (AEMWE) cell was operated for ~1000 h at a voltage bias of 1.95 V. Impedance spectra were regularly measured every ~ 100 h, and changes in the ohmic and non-ohmic resistance were traced as a function of time. While there was relatively little change in the I-V curves and the total cell resistance during the long-term test, we observed various electrochemical phenomena in the cell: 1) initial activation with a decrease in both ohmic and non-ohmic resistance; 2) momentary and non-permanent bubble resistance (non-ohmic resistance) depending on the voltage bias, and 3) membrane degradation with a slight increase in the ohmic resistance. Thus, the regular test protocol used in this study provided clear insights into the performance degradation (or improvement) mechanism of AEMWE cells.

• Journal of Construction Engineering and Project Management
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• v.8 no.2
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• pp.17-33
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• 2018

This study investigates the stability of professionals' cost variability factor-rankings across different levels of cost-variability and response scenarios. Descriptive statistics are used to examine the stability of factor-ranking for 20 cost variability factors and a Multinomial Logistic (MNL) regression model was implemented to examine the stability of cost variability factors across three cost variability levels. The finding on the descriptive statistics indicated that professionals' factors-rankings are stable only for external factors. The MNL regression results on factor-stability suggested that 8 out of the 20 evaluated factors were unstable determinant of lower cost variability levels. These factors are "risk associated with the project", "personal bias and poor professionalism of the estimators", "limited time available to complete the project", "lack of skills and experience by estimator" "geographical location of projects", "incomplete & rush designs for estimate", "unforeseen or unexpected site constraints", "high class bidders for the contractors". Similarly lack of experience and large size projects were observed to be unstable as well. These observations suggest that professionals' view on pre-tender cost variability factor-ranking yields unstable factor rankings hence should not be relied upon as the only mechanisms to mitigate cost related risks in construction projects.