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Effect of Hydrogen in the Gate Insulator on the Bottom Gate Oxide TFT  

KoPark, Sang-Hee (Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI))
Ryu, Min-Ki (Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI))
Yang, Shin-Hyuk (Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI))
Yoon, Sung-Min (Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI))
Hwang, Chi-Sun (Oxide Electronics Research Team, Electronics Telecommunications Research Institute (ETRI))
Publication Information
Journal of Information Display / v.11, no.3, 2010 , pp. 113-118 More about this Journal
Abstract
The effect of hydrogen in the alumina gate insulator on the bottom gate oxide thin film transistor (TFT) with an InGaZnO film as the active layer was investigated. TFT with more H-containing alumina films (TFT A) fabricated via atomic layer deposition using a water precursor showed higher stability under positive and negative bias stresses than that with less H-containing alumina deposited using ozone (TFT B). While TFT A was affected by the pre-vacuum annealing of GI, which resulted in $V_{th}$ instability under NBS, TFT B did not show a difference after the pre-vacuum annealing of GI. All the TFTs showed negative-bias-enhanced photo instability.
Keywords
Oxide TFT; H effect; PBS; NBS; NBIS;
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