• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1281_1282
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• 2009

ICP-CVD를 이용하여 inverted staggered 구조를 갖는 미세결정 실리콘 (Nanocrystalline Silicon, nc-Si) 박막 트랜지스터(Thin Film Transistor, TFT)를 제작하였다. 또한, 소자의 특성과 전기적 안정성을 평가하였다. 실험 결과는 짧은 채널 길이를 갖는 nc-Si TFT가 긴 채널 길이의 소자보다 같은 드레인 전압 바이어스 하에서 덜 열화 됨을 알 수 있었다. 이는 드레인 전압 바이어스 하에서의 낮은 채널 캐리어 농도는 적은 defect state를 만들기 때문으로 짧은 채널 길이의 TFT가 긴 채널 길이의 TFT보다 $V_{TH}$ 열화가 적었다. 이러한 결과는 짧은 채널 길이의 nc-Si TFT가 디스플레이 분야에 있어 다양하게 응용될 것으로 기대된다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1348-1351
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• 2007

We demonstrated that the threshold voltage shift owing to a gate-bias stress is originated from the trapped charges at the interface between semiconductor layer and dielectric layer, and such drawback can be settled by applying long-term delay time to the gate electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1792-1795
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• 2007

We have proposed a new driving method which improve the current stability of a-Si:H TFTs for AMOLED. It performs the negative bias annealing on driving TFTs during a certain period of a frame time. In the proposed method, the range of data signals is significantly reduced by modulating VSS.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1176-1178
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• 2007

A novel integrated a-Si:H gate driver with high reliability has been designed and simulated. Since the a-Si:H TFT is easily degraded by gate bias stress, we should optimize the circuit considering the threshold voltage shift. The conventional circuit shows voltage drop at the input stage by threshold voltage of the TFT, however, the proposed circuit dose not shows voltage drop and keeps constant regardless of threshold voltage shift of the TFT.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.1877-1880
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• 2005

This paper proposed the new current feed-back amplifier for low supply voltage application. The input stage was designed to be a class-AB circuit and achieve the low supply-voltage operation down to $2V_{TH}+2V_{DS(SAT)}$. With the self-adjust bias current, the high performance can be adopted with high stability. The circuit was successfully proven by the simulation with MOSIS 0.5 ${\mu}$m MOS technology.

• International Journal of Control, Automation, and Systems
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• 제5권1호
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• pp.35-42
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• 2007

This paper presents an INS(Inertial Navigation System) grade, surface micro-machined differential resonant accelerometer(DRXL) manufactured by an epitaxially grown thick poly silicon process. The proposed DRXL system generates a differential digital output upon an applied acceleration, in which frequency transition is measured due to gap dependent electrical stiffness change. To facilitate the resonance dynamics of the electromechanical system, the micromachined DRXL device is packaged by using the wafer level vacuum sealing process. To test the DRXL performance, a nonlinear self-oscillation loop is designed based on the extended describing function technique. The oscillation loop is implemented using discrete electronic elements including precision charge amplifier and hard feedback nonlinearity. The performance test of the DRXL system shows that the sensitivity of the accelerometer is 24 Hz/g and its long term bias stability is about 2 mg($1{\sigma}$) with dynamic range of ${\sigma}70g$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.56-60
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• 2006

We review our studies on the growth of microcrystalline silicon films by the standard PECVD technique. In situ spectroscopic ellipsometry studies allow the optimization of the complex film structure with respect to competing aspects of the growth process. Fine tuning the hydrogen flux, the ion energy, and the nature of the species contributing to deposition produces unique films with a fully crystallized interface with silicon nitride. These materials have been successfully incorporated in bottom gate TFTs which present mobility values in the range of 1 to 3 $cm^2/V.s$, and stable characteristics when submitted to a bias stress. The stability of these TFTs makes them suitable for driver applications in AMLCDs as well as pixel elements in OLED displays.

• ETRI Journal
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• 제28권1호
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• pp.45-50
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• 2006

An RC oscillator using amorphous silicon thin film transistors was developed. The oscillation frequency and its dependence on resistance and bias voltage were studied. The frequency was controlled by adjusting the feedback resistance of the oscillator. The highest measured frequency of the oscillator was around 140 kHz, which is acceptable for low-end radio frequency identification (RFID). Since a low-end RFID circuit needs low cost and a simple process, an amorphous silicon oscillator is suitable.

• 전자공학회논문지A
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• 제33A권6호
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• pp.72-80
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• 1996

This paper presetns the development of a SSPA operating at KU-band(14~14.5 GHz) in order of replace TWTA used in the terrestria transponder of a satellite communication. The driving stage of SSPA uses internally matched 2W, 4W, 8W FET and the power stage is coupled with two internally matched 8W FET by branch-line cominer. The SSPA is fabricated with oth the RF circuit and the bias circuitry operating temperature compensation, regulation and sequence on aluminum housing. The SSPA testing resutls implemented in this way show 24.8$\pm$1dB small-signal gain, 41dBm P1dB power, a typical two tone C/IM3, -33dBc with single carrier backed off 6dB from p1dB, and gain stability over temeprature (-30~50)$\pm$1dB.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2006년도 춘계학술대회논문집
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• pp.396-401
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• 2006

Dynamic behaviors of the impact damper are studied experimentally and numerically. In order to investigate wide range of excitation frequencies and amplitudes, a simple but high amplifying and bias-free experimental setup is designed. Experiments focused on the harsh operation condition demonstrate Accelerated mass loading which not only deteriorates the performance of the impact damper but also involves the structural resonance which should be avoided for the stability of the system. In the previous studies, instability or deterioration of the performance was reported for the off resonance frequency region. But this paper shows that the performance deterioration and structural resonances can be predicted. Using finite element modeling and analysis, accurate system parameters were derived and used for the numerical modeling employing the conservation of the momentum. Numerical study of the transient responses using 4th-order Runge-Kutta method demonstrates general performance of the system, and shows that accelerated mass loading phenomenon is deeply related with the vibration amplitudes and the mass of the auxiliary system.