• Journal of Yeungnam Medical Science
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• v.6 no.2
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• pp.47-55
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• 1989

High frequency ventilation (HFV) is a new ventilatory technique that uses very small tidal volume(less than the anatomic dead space) and high frequency, and classified 4 distinct types according to frequency and mode of gas delivery. The mechanism of gas transport of high frequency oscillation ventilation(HFOV) is somewhat different to other types of HFV. To evaluate the determinants of $PaCO_2$ in HFOV, a study was done with a HFOV on 9 cats, and the results are : 1) $PaCO_2$ was not correlated with frequency at the constant stroke volume(6 voltage) and bias flow (6L/minutes). 2) $PaCO_2$ was correlated with stroke volume but not with bias flow under the constant frequency(15Hz/min) and bias flow(3 to 6L/min). From above results, the main determinant of $PaCO_2$ on artificial ventilation with HFOV was stroke volume, but further study between flow, the site of delivery to the airway and humidification of bias flow and $CO_2$ elimination is required in future research.

• Journal of Aerospace System Engineering
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• v.17 no.4
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• pp.28-33
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• 2023

In this study, computational fluid dynamics was used to analyze the flow bias generated as air supplied by a fan passes through ducts, piping, and a coal separation screen. The flow bias of the air flow is mostly caused by the spatial characteristics of the fan volute and duct, and the internal baffle and the coal separation screen at the outlet cause strong pressure losses that dampen the flow bias. ANSYS CFX was used for computational fluid dynamics, and since the baffle and the coal separation screen are shaped like perforated plates with many small holes uniformly distributed, actual modeling for analysis was not possible. Therefore, the Porous Loss Model was applied. The evaluation of the flow bias was analyzed based on the velocity distribution of the Porous Loss Model at the outlet surface of the coal separation screen obtained from the computational fluid dynamics results.

• Journal of the Korean institute of surface engineering
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• v.27 no.1
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• pp.36-44
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• 1994

The TiN films were deposited on the stainless substrates using arc vapor ion deposition process to in-vestigated the wear resistance. Pin-on-disc tests were performed to measure the volume wear loss of TiN films. The substrate bias voltages and nitrogen flow rates were selected as the deposition parameters of TiN films. It was found that the wear resistance of TiN films was enhanced with increasing bias voltages(0~-300 V) and nitrogen flow rates(220~380 SCCM). The volume wear loss TiN films were about 9.5~2.1$\times$$10^{-3}mm^3$ and 3.5~2.2$\times$$10^{-3}mm^3$ with bias voltages and nitrogen flow rates, respectively.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2006.05a
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• pp.1372-1375
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• 2006

The simplified impedance model which can consider a combined flow condition was suggested. Although the strength and position of the shear layer cannot be obtained by a linear sum of two separate contributions when both flows occur together, it was simply assumed that the impedance under the combined flow follows from summing the separate flow impedance. To validate the simplified impedance model, acoustic properties of a concentric resonator was predicted and measured. The predicted transmission loss using the simplified model shows reasonable agreements with measurements. One can find that the simplified impedance model obtained by the superposition of the separate flow impedances can be adjusted to predict the acoustic properties of a concentric resonator.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.79-83
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• 2009

In this study, the characteristics of amorphous silicon etching for the formation of gate electrodes have been evaluated at the variation of several process parameters. When total flow rates composed of $Cl_2/HBr/O_2$ gas mixtures increased, the etch rate of amorphous silicon layer increased, but critical dimension (CD) bias was not notably changed regardless of total flow rate. As the amount of HBr in the mixture gas became larger, amorphous silicon etch rate was reduced by the low reactivity of Br species. In the case of increasing oxygen flow rate, etch selectivity was increased due to the reduction of oxide etch rate, enhancing the stability of silicon gate etching process. However, gate electrodes became more sloped according to the increase of oxygen flow rate. Higher source power induced the increase of amorphous silicon etch rate and CD bias, and higher bias power had a tendency to increase the etch rate of amorphous silicon and oxide.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.260-264
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• 2008

The operational characteristics of superconducting amplifier using vortex flux flow were analyzed from an equivalent circuit in which its current-voltage characteristics for the vortex motion in YBCO microbridge were reflected. For the analysis of operation as an amplifier, dc bias operational point for the superconducting amplifier is determined and then ac operational characteristics for the designed superconducting amplifier were investigated. The variation of transresistance, which describes the operational characteristics of superconducting amplifier, was estimated with respect to conditions of dc bias. The current and the voltage gains, which can be derived from the circuit for small signal analysis, were calculated at each operational point and compared with the results obtained from the numerical analysis for the small signal circuit. From our paper, the characteristics of amplification for superconducting flux flow transistor (SFFT) could be confirmed. The development of the superconducting amplifier applicable to various devices is expected.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.612-615
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• 2009

We need to control the growth orientation of CNTs on a substrate for applications to various electric devices. Generally, the flow direction of feed gases and electric field between two electrode affect to growth orientations of CNTs. In this paper, we varied tilt degrees $(0^{\circ},\;20^{\circ},\;35^{\circ},\;50^{\circ},\;65^{\circ},\;90^{\circ})$ of substrates on a cathode and DC bias voltages (0, 500, 700 V) applied between two electrodes in order to change growth orientations of CNTs. We confirmed that tilt degrees of the substrate and variation of DC bias voltages affected to the shape and orientation of the grown CNTs on the substrate.

• Journal of Magnetics
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• v.15 no.3
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• pp.132-137
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• 2010

Plasma etching of $SiO_2$ contact holes was statistically analyzed by a fractional factorial experimental design. The analysis revealed the dependence of the etch rate and DC self-bias voltage on the input factors of the magnetically enhanced reactive ion etching reactor, including gas pressure, magnetic field, and the gas flow rates of $CHF_3$, $CF_4$, and Ar. Empirical models of the DC self-bias voltage and etch rate were obtained. The DC self-bias voltage was found to be determined mainly by the operating pressure and the magnetic field, and the etch rate was related mainly to the pressure and the flow rates of Ar and $CHF_3$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.27-32
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• 2004

The diamond-like carbon (DLC) films were deposited on the Si (100) wafer by a rf-PECVD method as a function of the mixture rate of methane-hydrogen gas and bias voltage. The bonding structure and mechanical properties of these deposited DLC films were investigated using FT-IR, Raman, and nano-indenter. The deposition rates of DLC films increased with increased flow rate of methane in the gas mixtures and increased bias voltage. The $sp^3/sp^2$ bonding ratio of carbon in thin film and the hardness increased with increasing flow rate of hydrogen in the gas mixtures and increasing bias voltage.

• Journal of Institute of Control, Robotics and Systems
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• v.18 no.1
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• pp.54-61
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• 2012

In this paper, the pose estimation method for the satellite GTB (Ground Test Bed) using vision/MEMS IMU (Inertial Measurement Unit) integrated system is presented. The GTB for verifying a satellite system on the ground is similar to the mobile robot having thrusters and a reaction wheel as actuators and floating on the floor by compressed air. The EKF (Extended Kalman Filter) is also used for fusion of MEMS IMU and vision system that consists of a single camera and infrared LEDs that is ceiling landmarks. The fusion filter generally utilizes the position of feature points from the image as measurement. However, this method can cause position error due to the bias of MEMS IMU when the camera image is not obtained if the bias is not properly estimated through the filter. Therefore, it is proposed that the fusion method which uses the position of feature points and the velocity of the camera determined from optical flow of feature points. It is verified by experiments that the performance of the proposed method is robust to the bias of IMU compared to the method that uses only the position of feature points.