• 한국생명과학회:학술대회논문집
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• 한국생명과학회 2003년도 제39회 학술심포지움
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• pp.19-22
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• 2003

• Bulletin of the Korean Chemical Society
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• 제34권3호
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• pp.773-776
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• 2013

We have prepared 1-D BiSI and 2-D BiOI nanostructures, and characterized them by scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffraction crystallography, thermogravimetric analysis/differential scanning calorimetry, and UV-visible absorption. Here, we first report clear HR-TEM image of BiSI. In addition, we first found that the growth direction of BiSI is [12-1] plane, with the neighboring distance of 0.30 nm. The crystal structures of BiSI and BiOI are found to be orthorhombic (Pnam) and tetragonal (P4/nmm), respectively. The absorption band gaps of BiSI and BiOI are measured to be 1.55 and 1.92 eV, respectively. Our study could further highlight the applications of V-VI-VII compounds.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.33.2-33.2
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• 2009

Dielectric and piezoelectric properties of Lead-free $(1-x)(Bi_{0.5}K_{0.5})TiO_3-xBiFeO_3$ceramics prepared by a conventional solid state reaction method were investigated in the range of x = 0~10 mol%. Piezoelectric coefficient was increased from 31 pC/N at x = 0 mol% to 64 pC/N at x = 6 mol% then decreased with increasing x. Electromechanical coupling factor ($K_p$) was increased up to 0.18 at x = 10 mol%. On the other hand, mechanical quality factor ($Q_m$) was decreased. Grain size was not much changed with various x and a single perovskite with tetragonal symmetry was maintained at all compositions forming a solid solution between $(Bi_{0.5}K_{0.5})TiO_3$ and $BiFeO_3$. Depolarization temperature ($T_d$) was gradually decreased with increasing x from $302^{\circ}C$ at x = 0 to $245^{\circ}C$ at x = 10 mol%.

• 대한화학회지
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• 제39권5호
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• pp.384-392
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• 1995

$BiCl_3$의 승화압과 엔탈피를 370.6에서 488.8 K까지 Knudsen 유출법을 사용하여 측정하였고, 또한 438.2에서 495.7 K까지 Torsion 유출법에 의해 추가 실험을 하였다. 평형 승화압도 이 안정상태 데이터로부터 구하였다. ${\Delta}_{sub}H^0_{298.15}$와 ${\Delta}_{sub}S^0_{298.15}$의 상관관계를 이용하여, 추천할 수 있는 p(T) 식을 $BiCl_3(s)$에 의해 아래와 같이 구하였다. $BiCl_3(s); \; log(p/Pa)=－C/(T/K)\;－2.838log(T/K)－8.097{\times}10^{-2}(K/T)^2＋22.588$, 여기서 p는 파스칼, T는 절대온도, ${\Delta}_{sub}H^0_{298.15}$의 단위는 kJ $mol^{-1}$이고, $C=({\Delta}_{sub}H^0_{298.15}＋5.9988)/1.9146{\times}10^{-2}$이다. 응축상수와 그것의 온도 의존성도 위의 두 방법에 의한 실험으로부터 유도하였다.

• 한국통신학회논문지
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• 제38B권3호
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• pp.172-179
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• 2013

본 논문에서는 양방향 링크의 채널 상태와 트래픽 부하가 비대칭적인 채널에서 네트워크 코딩을 적용하는 기법과 그 방식에 따른 성능에 대해서 살펴본다. 이러한 양방향 링크의 비대칭성을 반영하기 위해 패딩후 네트워크 코딩(Network Coding after Padding: NaP) 방식과 분할 후 네트워크 코딩(Network Coding after Fragmentation: NaF) 방식을 고려한다. NaP 방식은 지금까지 트래픽 부하의 비대칭성만을 반영하기 위해 고려된 바 있으며, 본 논문에서는 실제로 채널의 상태를 동시에 고려할 경우에는 NaP 방식이 갖는 기존의 이득이 오히려 열화되는 것을 보인다. 또한, NaF 방식이 일반적인 양방향 링크 기법뿐만 아니라 NaP 방식보다 항상 성능이 좋다는 것을 보인다.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.232-235
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• 2008

In this study, in order to develop the composition ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$, $Na_2CO_3$, ZnO as sintering aids and their piezoelectric and dielectric properties were investigated according to the Bi substitution, Bi substitution induced grain growth and increase of sinterablity, And also, Bi substitution suppress secondary phase due to the liquid phase sintering effect. Bi substitution enhanced electromechanical coupling factor ($k_p$) and dielectric constant ($\varepsilon_r$), However, mechanical quality factor($Q_m$) was deteriorated, At the sintering temperature of 870 $^{\circ}C$ and Bi substitution of 1 mol%, density, electromechanical coupling factor ($k_p$), mechanical quality factor ($Q_m$), Dielectric constant ($\varepsilon_r$) and piezoelectric constant ($d_{33}$) of specimen showed the optimum values of 7,878 $g/cm^3$, 0,608, 835, 1603 and 397 pC/N, respectively for multilayer piezoelectric actuator application.

• 대한금속재료학회지
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• 제47권4호
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• pp.248-255
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• 2009

A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.

• 한국환경과학회지
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• 제19권5호
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• pp.565-575
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• 2010

This study is mainly focused on micellar effect of cetylpyridinium chloride(CPyCl) solution including alkylbenzimidazole(R-BI) on dephosphorylation of diphenyl-4-nitrophenylphosphinate(DPNPIN) in carbonate buffer(pH 10.7). The reactions of DPNPIN with R-BI$^{\ominus}$ are strongly catalyzed by the micelles of CPyCl. Dephosphorylation of DPNPIN is accelerated by BI$^{\ominus}$ ion in $10^{-2}M$ carbonate buffer(pH 10.7) of $4{\times}10^{-3}M$ CPyCl solution up to 100 times as compared with the reaction in carbonate buffer by no BI solution of $4{\times}10^{-3}M$ CPyCl. The value of pseudo first order rate constant($k^m_{BI}$) of the reaction in CPyCl solution reached a maximum rate constant increasing micelle concentration. Such rate maxima are typical of micellar catalyzed bimolecular reactions. The reaction mediated by R-BI$^{\ominus}$ in micellar solutions are obviously slower than those by BI$^{\ominus}$, and the reaction rate were decreased with increase of lengths of alkyl groups. It seems due to steric effect of alkyl groups of R-BI$^{\ominus}$ in Stern layer of micellar solution. The surfactant reagent, cetylpyridinium chloride(CPyCl), strongly catalyzes the reaction of diphenyl-4-nitrophenylphosphinate(DPNPIN) with alkylbenzimidazole (R-BI) and its anion(R-BI$^{\ominus}$) in carbonate buffer(pH 10.7). For example, $4{\times}10^{-3}M$ CPyCl in $1{\times}10^{-4}M$ BI solution increase the rate constant ($k_{\Psi}=1.0{\times}10^{-2}sec^{-1}$) of the dephosphorylation by a factor ca.14, when compared with reaction ($k_{\Psi}=7.3{\times}10^{-4}sec^{-1}$) in $1{\times}10^{-4}M$ BI solution(without CPyCl). And no CPyCl solution, in $1{\times}10^{-4}M$ BI solution increase the rate constant ($k_{\Psi}=7.3{\times}10^{-4}sec^{-1}$) of the dephosphorylation by a factor ca.36, when compared with reaction ($k_{\Psi}=2.0{\times}10^{-5}sec^{-1}$) in water solution(without BI). This predicts that the reactivities of R-BI$^{\ominus}$ in the micellar pseudophase are much smaller than that of BI$^{\ominus}$. Due to the hydrophobicity and steric effect of alkyl group substituents, these groups would penetrate into the core of the micelle for stabilization by van der Waals interaction with long alkyl groups of CPyCl.

• Korean Chemical Engineering Research
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• 제53권3호
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• pp.391-396
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• 2015

n-부텐의 산화탈수소화에서 제조방법이 촉매의 반응활성에 미치는 영향을 조사하기 위하여 $BiFe_{0.65}MoP_{0.1}$ 산화물 촉매를 모델 촉매로 선정하여 공침법, 시트르산법, 수열합성법, 주형법 등의 방법으로 촉매를 제조하였다. 제조한 촉매의 물리 화학적 특성을 알아보고 반응 활성과 연관시키기 위하여 X-선 회절분석(XRD), 질소 흡착 탈착분석($N_2$ sorption), 암모니아/1-부텐-승온탈착분석($NH_3/1$-butene-TPD) 등의 특성분석을 수행하였다. 공침법으로 제조한 촉매의 활성이 가장 높게 관찰되었으며, 14시간 동안의 산화탈수소화 반응 기준으로 n-부텐의 전환율은 79.5%, 1,3-부타디엔의 선택도는 85.1%, 1,3-부타디엔 수율은 67.7%의 수치를 보였다. 암모니아 승온탈착 실험으로부터 촉매의 반응 활성은 촉매의 산특성과 밀접하게 관련이 있으며, 공침법으로 제조한 산화물 촉매가 다른 합성방법으로 제조한 촉매와 비교하여 가장 큰 산량을 갖는 것으로 관찰되었다. 또한, 1-부텐의 승온탈착 분석결과, 촉매의 활성은 흡착된 1-부텐과 촉매의 표면반응에 기인한 중간체의 흡 탈착 특성, 즉 약하게 흡착된 중간체(< $200^{\circ}C$)의 상대적인 양과 강하게 흡착된 중간체의 탈착 온도(> $200^{\circ}C$)와 밀접하게 관련이 있었다.

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1135-1140
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• 2008

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of $1.3{\mu}W$ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.