• Title/Summary/Keyword: BiP

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Interfacial Reaction between 42Sn-58 Bi Solder and Electroless Ni-P/Immersion Au UBM during Aging (시효 처리에 의한 42Sn-58Bi 솔더와 무전해 Ni-P/치환 Au UBM 간의 계면 반응)

  • Cho Moon Gi;Lee Hyuck Mo;Booh Seong Woon;Kim Tae-Gyu
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.95-103
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    • 2005
  • The interfacial reaction between 42Sn-58Bi solder (in wt.$\%$ unless specified otherwise) and electroless Ni-P/immersion Au has been investigated before and after thermal aging, with a focus on formation and growth of an intermetallic compound (IMC) layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 (bare Ni), 0.1, and $1{\mu}m$ was plated on the $5{\mu}m$ thick electroless Ni-P ($14{\~}15 at.\%$P) layer. Then, the 42Sn-58Bi solder balls were fabricated on three different UBM structures by screen-printing and pre-reflow. The $Ni_3Sn_4$ layer (IMC1) was formed at the joint interface after pre-reflow for all the three UBM structures. On aging at $125^{\circ}C$, a quaternary phase (IMC2) was observed above the $Ni_3Sn_4$ layer in the Au-containing UBM structures, which was identified as $Sn_{77}Ni{15}Bi_6Au_2$ (in at.$\%$). The thick $Sn_{77}Ni{15}Bi_6Au_2$ layer deteriorated the integrity of the solder joint and the shear strength of the solder bump was decreased by about $40\%$ compared with non-aged joints.

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Characterization of amorphous Sb-Bi-Te thin films as a function of Bi concentration (Bi 농도에 따른 비정질 Sb-Bi-Te 박막의 특성)

  • ;D. Mangalaraj
    • Journal of the Korean Vacuum Society
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    • v.11 no.1
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    • pp.28-34
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    • 2002
  • Thin films of $Sb_{2-x}Bi_xTe_3$ (x = 0.0, 0.5, and 1.0) are grown by vacuum evaporation. XRD analysis shows the amorphous nature of the films, and the composition studies confirm the stoichiometry of the films. Microstructural parameters of the films have been calculated and used to explain the electrical and optical properties of the films. It is observed that the carrier type has changed from p- to n-type at higher concentration (x = 1.0) of Bi. The resistivity of the films decreases rapidly with the increase of Bi concentration. However, the refractive index and optical band gap of the films increase with the Bi concentration.

Electrochemical properties of $Li_2O-P_2O_5-V_2O_5$ Glass-ceramics by Addition of $Bi_2O_3$ ($Bi_2O_3$첨가에 따른 $Li_2O-P_2O_5-V_2O_5$ 결정화유리의 전기화학적 특성변화)

  • Son, Muong-Mo;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.797-800
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    • 2002
  • Instead of a solution process producing amorphous $LiV_3O_8$ form, we prepared Lithium vanadate glass by melting $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ composition in pt. crucible and by quenching on the copper plate. From the crystallization of $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$, we could abtain glass-ceramics having crystal phase, LiV3O8 from glass matrix. The material heat-treated at lower-temperature, $250^{\circ}C$ had less crystalline and lower capacity, But the material heat-treadted at higher-temperature, $330^{\circ}C$ had higher capacity and $Li_2O-P_2O_5-V_2O_5$ glass-ceramics had higher capacity than $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics.

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Analysis of Thermodynamics for Formation of Single Phase in $Bi_2Sr_2Ca_nCu_{n+1}O_x$ Thin Films ($Bi_2Sr_2Ca_nCu_{n+1}O_x$ 박막의 단상 형성을 위한 열역학 해석)

  • Cheon, Min-Woo;Park, Yong-Pil;Kim, Jeong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1208-1211
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    • 2003
  • High quality $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin films fabricated by using the evaporation method at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $pO_3$. The correlation diagrams of the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ phases with $T_{sub}$ and $pO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on $T_{sub}$ and $pO_3$. From these results, the thermodynamic evaluation of ${\Delta}H$ and ${\Delta}S$, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

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Distribution Behavior of Bi and Pb Between Molten PbO-SiO2 Slag and Bi (용융(熔融) PbO-SiO2계(系) 슬래그와 Bi 사이의 Bi와 Pb의 분배거동(分配擧動))

  • Kim, Se-Jong;Kim, Eung-Jin;Sohn, Ho-Sang
    • Resources Recycling
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    • v.21 no.5
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    • pp.65-71
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    • 2012
  • The equilibrium distribution of bismuth and lead between molten PbO-$SiO_2$ slag and bismuth phase was studied in the temperature range of $775^{\circ}C$ to $850^{\circ}C$ in a MgO crucible. The oxygen partial pressure of atmosphere was controlled by $P_{CO2}/P_{CO}$ ratio. The value of $(%PbO)_{slag}/[%Pb]_{metal}$ increased with increasing $SiO_2$ content of slag, and the value of $(%Bi_2O_3)_{slag}/[%Bi]_{metal}$ decreased with increasing $SiO_2$ content of slag. The concentration of Pb in metal increased with increasing temperature. These experimental results agreed well with the thermodynamic prediction.

NEW SUBCLASS OF BI-UNIVALENT FUNCTIONS BY (p, q)-DERIVATIVE OPERATOR

  • Motamednezhad, Ahmad;Salehian, Safa
    • Honam Mathematical Journal
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    • v.41 no.2
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    • pp.381-390
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    • 2019
  • In this paper, we introduce interesting subclasses ${\mathcal{H}}^{p,q,{\beta},{\alpha}}_{{\sigma}B}$ and ${\mathcal{H}}^{p,q,{\beta}}_{{\sigma}B}({\gamma})$ of bi-univalent functions by (p, q)-derivative operator. Furthermore, we find upper bounds for the second and third coefficients for functions in these subclasses. The results presented in this paper would generalize and improve some recent works of several earlier authors.

Studies of Element Substitution on Superconductivity in Bi-Sr-Ca-Cu-O Oxides (Bi계 치환 고온 초전도체)

  • 권오흥;박천제
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.124-128
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    • 2000
  • The high Tc phase disappeared and low Tc phase increased in the substitution of transition elements for Bi ions. The high Tc phase decreased in the substitution of Si and Sn for Bi ions. The high Tc phase increased in the substitution of Sb, As and P which were the same group of Bi for Bi ions. The substitution of P ions was the most effective and then the high Tc phase was formed in large quantity by replacing Bi ions with 30% of P ions.

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Genetic relationships among penicillium species by characterizing RAPD markers

  • Yoon, Cheol-Sik;Bae, Kyung-Sook
    • Journal of Microbiology
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    • v.33 no.3
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    • pp.171-177
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    • 1995
  • Random amplified polymorphic DAN markers were characterized for three taxonomically problematic Penicillium species : P. aurantiogriseum var. Aurantiogriseum, P. verrucosum and P. puberulum, as well as for 25 species of mono, bi-, and terverticillate Penicillia. The relationships among mono, bi-, and terverticillate Penicillium species were determined from these RAPD markers. Eight species from mono-, eight from bi-, and nine from terverticilate Penicillia were examined. With 14 randomly chosen 10-mer primes, a 310 character by 25 species matrix was generated. Phenetic analysis separated the 25 species into three genetically distinct groups that correspond to the different arrangements of penicilli (mono-, bi-, and terverticillate). The results of this study suggest that P. aurantiogriseum var. aurantiogriseum, P. VERRUCOSUM, AND P. puberulum represent genetically distinct species, and that P. vulpinum should be included in terverticilate Penicillia. Phenogram branching patterns indicated that biverticillate species are genetically more similar to monoverticilate species than they are to terverticillate species.

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Thermoelectric Property and p-n Transition Mechanism of Hot Pressed Bi4/3Sb2/3Te3 ($Bi_{4/3}Sb_{2/3}Te_3$ 가압소결체의 열전특성과 p-n 전이기구)

  • 박태호;유한일;심재동
    • Journal of the Korean Ceramic Society
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    • v.29 no.11
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    • pp.855-862
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    • 1992
  • Thermoelectric power, electrical conductivity and Hall effect were measured, as functions of temperature in the range of 100 to 600 K, on polycrystalline Bi4/3Sb2/3Te3 which had been prepared via uniaxial hot-pressing at different temperatures in the range of 373 K to 773 K, aiming at searching a profitable processing route to a polycrystalline thermoelectric material, a promising, viable alternative to a single crystalline one. It was found that, with increasing temperature of pressing under a fixed pressure, the material, normally a p-type prior to being hot-pressed, underwent a transition to n-type. This transition was confirmed to be due to plastic deformation during hot-pressing and interpreted as being attributed to the change of the major ionic defect BiTe' into TeBi˙at temperature high enough for structure elements mobility. Thermoelectric figure-of-merit of the hot-pressed material was discussed in connection with the p-n transition in addition to microstructure.

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Dephosphpoylation of P-Nitrophenyldiphenylphosphinate by Benzimidazole Catalyzed with Ethyl tri-n-octyl Ammonium Bromide(ETABr) (ETABr 용액내에서 P-Nitrophenyldiphenylphosphinate의 탈인산화반응에 미치는 Benzimidazole의 촉매효과)

  • Kim, Jeung-Bea;Kim, Hak-Yoon
    • Journal of Environmental Science International
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    • v.16 no.5
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    • pp.641-647
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    • 2007
  • The phase transfer catalysis(PTC) reagent, ethyl tri-octyl ammonium bromide(ETABr), strongly catalyzes the reaction of p-nitrophenyi diphenyl phosphinate(p-NPDPIN) with benzimidazole(BI) and its anion($BI^{\theta}$). In ETABr solutions, the dephosphorylation reactions exhibit higher first order kinetics with respect to the nucleophile, BI, and ETABr, suggesting that reactions are occuring in small aggregates of the three species including the sub-strate(p-NPDPIN), whereas the reaction of p-NPDPIN with $OH^{\theta}$ is not catalyzed by ETABr. This behavior for the drastic rate-enhancement of the dephosphorylation is referred as 'aggregation complex model' for reaction of hydrophobic organic phosphinates with benzimidazole(BI) in hydrophobic quarternary ammonium salt(ETABr) solutions.