• Journal of the Korean Institute of Intelligent Systems
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• v.20 no.3
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• pp.356-361
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• 2010

M. Demirci[Vague groups, J. math. Anal. Appl. vol.230, pp. 142-156, 1999] studied the vague group operation on a crisp set as a fuzzy function and estabished the vague group structure on a crisp set. In this paper we consider bi-groups which are studied by A.A.A. Agboola and L.S. Akinola. And we also will define vague bi-groups and fuzzy bi-functions and we investigate some basic operations on the vague bi-group and fuzzy bi-functions.

• Korean Journal of Mathematics
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• v.14 no.1
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• pp.95-100
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• 2006

In this paper we give some new characterizations of the intra-regular ordered semigroups in terms of bi-ideals and quasi-ideals, bi-ideals and left ideals, bi-ideals and right ideals of ordered semigroups.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.32-32
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• 2005

• Proceedings of the Korea Information Processing Society Conference
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• 2015.04a
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• pp.343-345
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• 2015

현대사회가 복잡해지면서 정보의 양이 증가하였고, 경쟁이 치열해지면서 기업의 경영 전략으로 BI 서비스를 선택하였으나, 기존 BI 기업에서는 실시간 분석 및 처리, 외부 데이터 사용 불가 동의 문제점이 있었다. 이를 위해 본 논문에서는 BI서비스 동향 및 기술을 분석하고 기업의 효율적인 BI 서비스 적용 방안을 연구하였다.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.2
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• pp.45-49
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• 2019

Herein we developed the hot extrusion technology to prepare n-type Bi-Te-Se-based thermoelectric materials with high reliability. Starting ingot was fabricated via melt-solidification process, then pulverized it into powders (${\sim}30{\mu}m$) by using high energy ball milling. By optimization of mold design and temperature-pressure conditions for hot extrusion, dense extrudate of 1.8 mm in diameter with high 00l orientation could be obtained from disc-shape compacted powders (20 mm in diameter). High power factor ${\sim}4.1mW/mK^2$ and enhanced mechanical strength ~50 MPa were simultaneously observed at 300 K.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.897-907
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• 1997

Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.

• Korean Journal of Microbiology
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• v.32 no.3
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• pp.222-231
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• 1994

Kinetic analysis was done to elucidate the reaction mechanism of purine nucleoside phosphorylase (PNP) in Saccharomyces cerevisiae. The binary complexes of PNP${\cdot}$phosphate and PNP${\cdot}$ribose 1-phosphate were involved in the reaction mechanism. The initial velocity and product inhibition studies demonstrated were consistent with the predominant mechanism of the reaction being an ordered bi, bi reaction. The phosphate bound to the enzyme first, followed by nucleoside and base were the first product to leave, followed by ribose 1-phosphate. The kinetically suggested mechanism of PNP in S. cerevisiae was in agreement with the results of protection studies against the inactivation of the enzyme by sulfhydryl reagents, p-chloromercuribenzoate (PCMB) and 5,5'-dithiobisnitrobenzoate (DTNB). PNP was protected by ribose 1-phosphate and phosphate, but not by nucleoside or base, supporting the reaction order of ordered bi, bi mechanism. PCMB or DTNB-inactivated PNP was totally reactivated by dithiothreitol (DTT) and the activity was returned to the level of 77% by 2-mercaptoethanol, indicating that inactivation was reversible. The kinetic behavior of the PCMB-inactivated enzyme had been changed with higher $K_m$ value of inosine and lower $V_m$, and was restored by DTT. Inactivation of enzyme by DTNB showed similar pattern of K sub(m) value with that by PCMB, but had not changed the $V_m$ value, significantly. Negative cooperativity was not found with PCMB or DTNB treated PNP at high concentration of phosphate.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.33-38
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• 2011

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3$ powers were fabricated by mechanical alloying and hot-pressed at temperatures of $350{\sim}550^{\circ}C$. Themoelectric properties of the hot-pressed $(Bi_{0.2}Sb_{0.8})_2Te_3$ were characterized as a function of the hot-pressing temperature. With increasing the hot-pressing temperature from $350^{\circ}C$ to $550^{\circ}C$, the Seebeck coefficient and the electrical resistivity decreased from 237 ${\mu}V/K$ to 210 ${\mu}V/K$ and 2.25 $m{\Omega}-cm$ to 1.34 $m{\Omega}-cm$, respectively. The power factor of the hot-pressed $(Bi_{0.2}Sb_{0.8})_2Te_3$ became larger from $24.95{\times}10^{-4}W/m-K^2$ to $32.85{\times}10^{-4}W/m-K^2$ with increasing the hot-pressing temperature from $350^{\circ}C$ to $550^{\circ}C$. Among the specimens hot-pressed at $350{\sim}550^{\circ}C$, the $(Bi_{0.2}Sb_{0.8})_2Te_3$ hot-pressed at $500^{\circ}C$ exhibited the maximum dimensionless figure-of-merit of 1.09 at $25^{\circ}C$ and 1.2 at $75^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.1-8
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• 2008

Effects of annealing process in a reduction ambient on thermoelectric properties of the $(Bi,Sb)_{2}Te_3$ thin films prepared by thermal evaporation have been investigated. With annealing at $300^{\circ}C$ for 2 hrs in a reduction ambient(50% $H_2$+50% Ar), the crystallinity of the $(Bi,Sb)_{2}Te_3$ thin films were substantially improved with remarkable increase in the grain size. Seebeck coefficients of the $(Bi,Sb)_{2}Te_3$ thin films increased from$\sim90{\mu}V/K$ to $\sim180{\mu}V/K$ with annealing in the reduction ambient due to decrease in the hole concentration. Power factors of the $(Bi,Sb)_{2}Te_3$ thin films were remarkably improved for $5\sim16$ times with annealing in the reduction atmosphere. After annealing in the reduction ambient, a $(Bi,Sb)_{2}Te_3$ evaporated film exhibited a maximum power factor of $18.6\times10^{-4}W/K^{2}-m$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.363-369
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• 1994

Bimuth telluride base thermoelectrics are prepared by AC current applied hot pressing method. It is possible to minimize the defects arising from the vaporization of Te, thanks to the very short processing time compared to the single crystal growing method. The optimum conditions for the AC applied hot pressing of 95 mol% $Bi_2Te_3-5 mol% Bi_2Se_3$ thermoelectrics are sintering at $400^{\circ}C$, for 2 minutes, under 1500 kgf/$\textrm{cm}^2$, with the particle size of $125 to 250 {\mu}m$, range of powder. The resultant Z value (figure of merit) was $2.2{\times}10^{-3}/K$.