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Phase Stability and Electronic Properties of $Bi_2BaLnCuO_{6+δ}$ Cuprates with Structure 2201 Type

  • V. E. Fedorov;N. G. Naumov;P. P. Samoilov;N. F. Zakharchuk;N. I. Matskevich;백우현
    • Bulletin of the Korean Chemical Society
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    • v.16 no.6
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    • pp.484-489
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    • 1995
  • The synthesis of new bismuth-barium containing members of layered cuprates with 2201 type structure was reported. By solution calorimetry the formation enthalpies for Bi2MLaCuO6.5 (M=Ba, Ba0.5Sr0.5, Sr) were obtained. Crucial influence of partial oxygen pressure and size of lanthanoid on stability of layered cuprates was shown. Electronic states of variable valence atoms were studied by voltammetry of solids.

Effects of Ag-alloy sheath on thermal/electrical conductivity of Bi-2223 superconductor tapes (피복합금을 사용한 Bi-2223 선재의 열전도도 및 전기전도도 특성평가)

  • ;;;;;John Slavko Volf;Hua Kun Liu;Miles Apperley
    • Progress in Superconductivity
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    • v.4 no.2
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    • pp.180-183
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    • 2003
  • We evaluated the effect of alloying-element additions to Ag sheath on thermal conductivity of Bi-2223 superconductor tapes. In order to evaluate the effect of sheath alloys and their configuration on the properties of tape, various combinations of Ag and Ag alloys were selected as inner and outer sheath. Thermal conductivity of the tapes was measured by using thermal integral method at 10∼120 K. It is observed that the presence of alloying-elements such as Mg, Sb, and Au in Ag sheath results in decreased thermal conductivity at low temperature. Specifically, the thermal conductivity of AgMg, AgSb, and AgAu at 40 K were 411.4, 142.3, and 109.7 W/(m·K), respectively, which is about 2∼9 times lower than that of Ag (1004.6 W/(m·K)). In addition, the thermal conductivity of alloy-sheathed tape was significantly dependent on their values of constituent sheath materials.

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Parameters affecting the seismic response of buildings under bi-directional excitation

  • Fontara, Ioanna-Kleoniki M.;Kostinakis, Konstantinos G.;Manoukas, Grigorios E.;Athanatopoulou, Asimina M.
    • Structural Engineering and Mechanics
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    • v.53 no.5
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    • pp.957-979
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    • 2015
  • The present paper investigates the influence of the orientation of the ground-motion reference axes, the seismic incident angle and the seismic intensity level on the inelastic response of asymmetric reinforced concrete buildings. A single storey asymmetric building is analyzed by nonlinear dynamic analyses under twenty bi-directional ground motions. The analyses are performed for many angles of incidence and four seismic intensity levels. Moreover three different pairs of the horizontal accelerograms corresponding to the input seismic motion are considered: a) the recorded accelerograms, b) the corresponding uncorrelated accelerograms, and c) the completely correlated accelerograms. The nonlinear response is evaluated by the overall structural damage index. The results of this study demonstrate that the inelastic seismic response depends on the orientation of the ground-motion reference axes, since the three individual pairs of accelerograms corresponding to the same ground motion (recorded, uncorrelated and completely correlated) can cause different structural damage level for the same incident angle. Furthermore, the use of the recorded accelerograms as seismic input does not always lead to the critical case of study. It is also shown that there is not a particular seismic incident angle or range of angles that leads to the maximum values of damage index regardless of the seismic intensity level or the ground-motion reference axes.

Thermal Process Effects on Grain Size and Orientation in $(Bi,La)_4Ti_3O_{12}$ Thin Film Deposited by Spin-on Method (스핀 코팅법으로 증착한 $(Bi,La)_4Ti_3O_{12}$ 박막의 후속 열공정에 따른 입자 크기 및 결정 방향성 변화)

  • Kim, Young-Min;Kim, Nam-Kyeong;Yeom, Seung-Jin;Jang, Gun-Eik;Ryu, Sung-Lim;Kweon, Soon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.192-193
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    • 2006
  • A 16Mb ITIC FeRAM device was fabricated with BLT capacitors. The average value of the switchable 2 polarization obtained m the 32k-array (unit capacitor size: 068 ${mu}m^2$) capacitors was about 16 ${\mu}C/cm^2$ at 3V and the uniformity within an 8-inch wafer was about 2.8%. But a lot of cells were failed randomly during the measuring the bit-line signal of each cell. It was revealed that the Grain size and orientation of the BLT thin film were severely non-uniform. Therefore, the uniformity of the grain size and orientation was improved by changing the process conditions of post heat treatment. The temperature of nucleation step was the very effective on varying the microstructure of the BLT thin film. The optimized temperature of the nucleation step was $560^{\circ}C$.

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[ $Bi_2Sr_2CaCu_2O{8+\delta}$ ] Intrinsic Josephson Junctions in a Parallel Magnetic Field

  • Lee, J.H.;Chong, Yon-Uk;Lee, Su-Youn;Khim, Z.G.
    • Progress in Superconductivity
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    • v.1 no.2
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    • pp.110-114
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    • 2000
  • We have investigated the Josephson vortex dynamics in $Bi_2Sr_2CaCu_2O{8+\delta}$ intrinsic Josephson junctions subjected to a magnetic field parallel to $CuO_2$ planes. We investigated mesas with $40\times40{\mu}m^2$ in size and containing 6 and 20. intrinsic junctions. The zero field I-V characteristics exhibited a typical hysteretic, multi-branched nature of the intrinsic Josephson effect. At high magnetic fields (H>1.5 T), I-V characteristics showed flux flow steps. The Swihart velocity obtained from this observation was about $4.2\times10^5$ m/s, which was the lowest mode electromagnetic wave velocity of N coupled stack. The experimental I-V curves fitted well into the simple model of Cherenkov radiation including Ohmic and non-linear dissipation terms. This suggests that the dissipation mechanism of Josephson vortex be due to both Cherenkov radiation and quasiparticle tunneling current.

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Engineering of Bi-/Mono-layer Graphene Film Using Reactive Ion Etching

  • Irannejad, M.;Alyalak, W.;Burzhuev, S.;Brzezinski, A.;Yavuz, M.;Cui, B.
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.4
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    • pp.169-172
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    • 2015
  • Although, there are several research studies on the engineering of the graphene layers using different etching techniques, there is not any comprehensive study on the effects of using different etching masks in the reactive ion etching (RIE) method on the quality and uniformity of the etched graphene films. This study investigated the effects of using polystyrene and conventional photolithography resist as a etching mask on the engineering of the number of graphene layers, using RIE. The effects were studied using Raman spectroscopy. This analysis indicated that the photo-resist mask is better than the polystyrene mask because of its lower post processing effects on the graphene surface during the RIE process. A single layer graphene was achieved from a bi-layer graphene after 3 s of the RIE process using oxygen plasma, and the bi-layer graphene was successfully etched after 6 s of the RIE process. The bilayer etching time was significantly smaller than reported values for graphene flakes in previous research.

Enhanced fT and fMAX SiGe BiCMOS Process and Wideband Power Efficient Medium Power Amplifier

  • Bae, Hyun-Cheol;Oh, Seung-Hyeub
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.3
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    • pp.232-238
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    • 2008
  • In this paper, a wideband power efficient 2.2 GHz - 4.9 GHz Medium Power Amplifier (MPA), has been designed and fabricated using $0.8{\mu}m$ SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage amplifier with all matching components and bias circuits integrated on-chip. A P1dB of 17.7 dBm has been measured with a power gain of 8.7 dB at 3.4 GHz with a total current consumption of 30 mA from a 3 V supply voltage at $25^{\circ}C$. The measured 3 dB bandwidth is 2.7 GHz and the maximum Power Added Efficiency (PAE) is 41 %, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of $1.7mm{\times}0.8mm$.

Dynamic Behavior of Bi Prestressed Concrete Girders (프리스트레스트 콘크리트거더의 동적응답 분석)

  • Lee, Pil-Goo;Kim, Choong-Eon
    • Proceedings of the Korea Concrete Institute Conference
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    • 2008.04a
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    • pp.353-356
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    • 2008
  • This study was performed to estimate the dynamic behavior for Bi Prestressed Concrete Girder(Bicon girder) which could introduce effectively prestressed forces into concrete girders. Dynamic behavior of PSC girder must be verified because it becomes not only slim but also long and a railway bridge which loaded regularly has risk of resonance especially. Forced vibration test using a vibration machine was executed for 20m railway bridge girder specimen to acquire dynamic characteristics(natural frequency, damping ratio) and test results showed the natural frequency of 6.632Hz and the damping ratio of 1.43%

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Static Behavior of Bi Prestressed Concrete Girders (프리스트레스트 콘크리트거더의 정적거동 평가)

  • Lee, Pil-Goo;Kim, Choong-Eon
    • Proceedings of the Korea Concrete Institute Conference
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    • 2008.04a
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    • pp.357-360
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    • 2008
  • This study was performed to estimate the workability and the static behavior for Bi Prestressed Concrete Girder(Bicon girder) which could introduce effectively prestressed forces into concrete girders. A bicon girder is manufactured by means of introducing pure bending moment that prestress simultaneously the compressive member(steel bar) and the tensile member(steel tendon). Static test was executed for 20m railway bridge girder specimen and evaluated whether pure bending moment was introduced or not, and the behaviors after cracking, and at the ultimate load. Test results showed that a bicon girder had the enough safety in the introduction of pure moment, the serviceability, and the ultimate behavior.

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