• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.331-332
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• 2008

Couplings between electric, magnetic, and structural order parameters result in the so-called multiferroic phenomena with two or more ferroic phenomena such as ferroelectricity, ferromagnetism, or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) permits potential applications in information storage, spintronics, and magnetic or electric field sensors. The perovskite BiFeO3(BFO) is known to be antiferromagnetic below the Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors responsible for leakage current in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is to make donor-doped BFO compounds and thin films. In this study, (Bi1-x,Ndx)(Fe1-y,Tiy)O3 thin films have been deposited on Pt(111)/TiO2/SiO2/Si substrates by pulsed laser deposition. The effect of dopants on the phase evolution and surface morphology are analyzed. Furthermore, electrical and magnetic properties are measured and their coupling characteristics are discussed.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.52-57
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• 2010

$BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.137-146
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• 1994

This experiments were focused on a modification of mechamical properties and structure in porous aluminum titanate ceramics by new additives which have been not researched yet. These were consisted of four kinds of additives i.e. Bi2O3, FeO, ZnO and NiO by addition amount of 1 wt% and 5 wt% respectively. The addition of Bi2O3 retarded a degree of syntehsis of aluminum titanate and accelerated in FeO, ZnO, NiO additives. Also, the most effective accelerator in synthesis of alunium titanate was FeO. A additives for the most effective of modification of microstructure, sharp distribtion of pore size and mechanical proterties was on ZnO addition and showed the lowest average pore size and narrowed pore size distribution. In order to improve of microstructure and pore size distribution in porous aluminum titanate ceramics was desired the addition amount of 1 wt% compare to 5 wt%.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.28-28
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• 2012

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• Rapid Communication in Photoscience
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• v.3 no.2
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• pp.35-37
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• 2014

PEC (photoelectrochemical) water splitting for $O_2/H_2$ production is one of the promising but difficult way to utilize solar energy. Among photocatalytic materials for PEC water oxidation, $BiVO_4$ (Eg = 2.4 eV) has been recently intensively studied since it has various advantageous properties. But its maximum efficiency has not been realized owing to kinetic factors - slow water oxidation at surface & insufficient stability. These problems can be simultaneously solved by application of oxygen evolution catalyst (OEC) such as $CoO_x$, Co-Pi, $IrO_x$ etc. Herein we report the first successful application of $NiFeO_x$ OEC on $BiVO_4$, showing good performance compared to other effective OEC applied on $BiVO_4$ under basic conditions. The enhanced activity of OEC loaded $BiVO_4$ has been supported by the surface charge separation efficiency and electrochemical impedance studies.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1829-1831
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• 2005

Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_3O_{12}$(BNdT) thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying post-annealing temperatures. Increasing post-annealing temperature, the (117) peak was increased. An increase of rod type grains of BNdT films with increasing post-annealing temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with post-annealing temperature of $700^{\circ}C$ were 418 and 0.37, respectively.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.144-144
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.91.1-91
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.318-319
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• 2008

In this article, magnetic properties of multiferroic bi-layer $BiFeO_3$ (BFO)/$BaTiO_3$ (BTO) thin films were studied. It was found that the magnetization increased by the insertion of BTO buffer layer even though the interfacial stress was slightly relaxed, which indicated a coupling between the ferroelectric and ferromagnetic orders. Furthermore, with slightly increase of BFO film thickness, both BFO and BFO/BTO bi-layer films showed anisotropic magnetic properties with higher in-plane magnetization than the values measured out-of-plane. These are attributable to strain constraint effect at the interface.