• Title/Summary/Keyword: Bi-2201

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Analysis of Sticking Coefficient in BSCCO Thin Film (BSCCO 박막의 부착계수 해석)

  • Chun, Min-Woo;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.252-255
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    • 2002
  • BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of $Bi_{2}O_{3}$. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of $Bi_{2}O_{3}$.

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High-Tc Superconducting Bi-Sr-Ca-Cu-O Thin Films prepared by Sputter Deposition (스퍼터 증착법으로 제작한 Bi-Sr-Ca-Cu-O 고온 초전도 박막)

  • Cheon, Min-Woo;Yang, Sung-Ho;Park, No-Bong;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.329-330
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    • 2005
  • Bi-Sr-Ca-Cu-O thin films have been fabricated by sputter deposition method. During the deposition, 10 and 90 wt%-ozone/oxygen mixture gas of typical pressure of $1\sim9\times10^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

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R-T Characteristic in BSCCO Thin Films (BSCCO 박막의 저항-온도 특성)

  • Cheon, Min-Woo;Yang, Sung-Ho;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05b
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    • pp.98-101
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    • 2005
  • BSCCO thin films fabricated by using the evaporation method. As a result, although the composition of Bi2212 was set up, the phase of Bi2201, Bi2212 and Bi2223 was formed. The formation area of these stable phases is indicated as inclined line in the direction of the right lower end from the Arrhenius plot of the substrate temperature-oxidation gas pressure, and are distributed in very small area. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation.

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Sticking Characteristics in Bi2Sr2CanCun+1Ox Thin Films Fabricated by using the Evaporation Method to Improve the Sticking Ratio (부착율 개선을 위해 증발 법으로 제작한 Bi2Sr2CanCun+1Ox 박막의 부착 특성)

  • 천민우;박용필
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.11
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    • pp.1029-1034
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    • 2003
  • The Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$, superconducting thin films arc fabricated by using the sputtering and evaporation method. Because we confirmed the sticking ratio of Bi element in the Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$ superconducting thin film fabricated by using the sputtering method was much lower than the expected value, to get the enough number of the flakes of Bi, faraday cup was used to evaporate Bi clement. As a result of the fabrication, Bi 2201 and Bi 2212 single phases could be made by the optima of deposition condition. And we confirmed the sticking coefficient of Bi element was clearly related to the temperature change of the substrate and the generation of Bi22l2 phase

Phase Stability and Electronic Properties of $Bi_2BaLnCuO_{6+δ}$ Cuprates with Structure 2201 Type

  • V. E. Fedorov;N. G. Naumov;P. P. Samoilov;N. F. Zakharchuk;N. I. Matskevich;백우현
    • Bulletin of the Korean Chemical Society
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    • v.16 no.6
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    • pp.484-489
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    • 1995
  • The synthesis of new bismuth-barium containing members of layered cuprates with 2201 type structure was reported. By solution calorimetry the formation enthalpies for Bi2MLaCuO6.5 (M=Ba, Ba0.5Sr0.5, Sr) were obtained. Crucial influence of partial oxygen pressure and size of lanthanoid on stability of layered cuprates was shown. Electronic states of variable valence atoms were studied by voltammetry of solids.

Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition

  • Yang, Sung-Ho;Park, Yong-Pil;Jang, Kyung-Uk;Oh, Geum-Gon;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.97-100
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    • 2000
  • Si$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

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A Study on the Resistivity-Temperature Characteristic of the Bi-Superconducting Thin Films Fabricated by using the Bon Beam Sputtering Method (이온 빔 스퍼링 법으로 제작한 Bismuth계 초전도 박막의 저항률-온도특성에 관한 연구)

  • Cheon, Min-Woo;Park, No-Bong;Yang, Sung-Ho;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1218-1221
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    • 2004
  • Bi2212 superconducting thin films fabricated by using the ion Beam Sputtering Method. As a result, although the composition of Bi2212 was set up, the phase of Bi2201, Bi2212 and Bi2223 was formed. The formation area of these stable phases is indicated as inclined line in the direction of the right lower end from the Arrhenius plot of the substrate temperature-oxidation gas pressure, and are distributed in very small area. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation.

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Phase Stability of Bi-2212 and Bi-2223 Thin Films Prepared by IBS Technique

  • Yang, Sung-Ho;Park, Yong-Pil
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.1
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    • pp.12-15
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    • 2001
  • Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature (T $_{sub}$) and ozone pressure(PO$_3$). It is found out that these phases are limited within very narrow temperature.e.

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Analysis of Thermodynamics in BiSrCaCuO Thin Films Fabricated by Using the i-beam sputtering method (i-beam 스퍼터링 법으로 제작한 BiSrCaCuO 박막의 열역학분석)

  • Kim, Tae-Gon;Park, yong-Pil
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.1
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    • pp.89-94
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    • 2007
  • High duality BiSrCaCuO thin films fabricated by using the i-beam sputtering method at various substrate temperatures, $T_{sub}$ and oxidation gas pressures, $pO_3$. The correlation diagrams of the BiSrCaCuO phases with Tsub and $pO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on $T_{sub}$ and $pO_3$. From these results, the thermodynamic evaluation of ${\Delta}H$ and${\Delta}S$, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

Analysis of the Staking Fault in Crystalline Phase of Thin Films Fabricated by $Bi_2Sr_2Ca_1Cu_2O_x$ Composition ($Bi_2Sr_2Ca_1Cu_2O_x$ 조성으로 제작된 박막의 결정상에 대한 고용비 해석)

  • Yang, Seung-Ho;Lee, Ho-Shik;Park, Yong-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.06a
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    • pp.524-527
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    • 2007
  • [ $Bi_2Sr_2Ca_{n-1}Cu_nO_x$ ](n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about % K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $ CaCuO_2$ was observed in all of the obtained films.

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