• The Korean Journal of Pharmacology
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• v.23 no.1
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• pp.25-31
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• 1987

The present study examines firstly, the inhibition of collagen gelation to explore the possible involvement of $Cu^{++}$-catalyzed peroxidation in rheumatoid arthritis and secondly, the effect of sodium salicylate on this peroxidative reaction to provide a possible explanation for its mechanism of anti-inflammatory action. Incubation of collagen obtained from rat skin with $Cu^{++}$ and $H_2O_2$ resulted in the inhibition of gelation in terms of maximal turbidity and lag phase, but either $Cu^{++}$ or $H_2O_2$ alone essentially gave no effect in the collagen gelation. In the presence of sodium salicylate the inhibited gelation of collagen induced by $Cu^{++}$ and $H_2O_2$ was reversed with the dependency of the concentration of sodium salicylate. Moreover, the rate of $H_2O_2$ decomposition by $Cu^{++}$ was accelerated by sodium salicylate and this decomposition of $H_2O_2$ was found to be saturable in terms of concentration of this drugs. Thus it can be expected that $Cu^{++}$ -catalyzed peroxidation attacks collagen resulting in change of structural or functional integrity of collagen, and sodium salicylate may act on this peroxidative process, possibly through the enhancement of catalatic action of $Cu^{++}$. From these results $Cu^{++}$-catalyzed peroxidation can be in part responsible for degradation of joint tissue in rheumatoid arthritis and sodium salicylate may exert its anti-inflammatory action by this peroxidative reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.263-266
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• 2003

The fine $YBa_2Cu_3O_x$ powder ($0.2{\sim}1.0\;{\mu}m$) is produced by sol-gel method, and electrophoresis deposition is used for the preparation of $YBa_2Cu_3O_x$ thick films which are deposited on Ag wire. The oriented $YBa_2Cu_3O_x$ was tried to be prepared by the zone-melting method under low oxygen partial pressure. The orientation and the phase composition were examined by the X-ray diffraction and the superconductivities were measured by 4 line method. The critical current densities are still quite low, which may be due to unsuitable technical parameters for zone-melting of $YBa_2Cu_3O_x$ thick films. Therefore the heat treatment condition and controlling of low oxygen partial pressure should be improved in the future experiment.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1193-1196
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• 2009

Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.614-618
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• 2006

The thermal stability of Cu/Ti(or Ta)/NiSi contacts was investigated. Ti(Ta)-capping layers deposited to form NiSi was utilized as the Cu diffusion barrier. Ti(Ta)/NiSi contacts was thermally stable upto $600^{\circ}C$. However when Cu/Ti(Ta)/NiSi contacts were furnace-annealed at $300{\sim}400^{\circ}C$ for 40 min., the Cu diffusion was found to be effectively suppressed, but NiSi was dissociated and then Ni diffused into the Cu layer to form Cu-Ni solutions. On the other hand, the Ni diffusion did not occur for the Al/Ti/NiSi system. The thermal instability of Cu/Ti(Ta)/NiSi contacts was attributed to the high heat of solution of Ni in Cu.

• Journal of Surface Science and Engineering
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• v.38 no.1
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• pp.28-36
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• 2005

In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16～0.24 11m with aspect ratio of 4.17～6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.

• Journal of Surface Science and Engineering
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• v.53 no.4
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• pp.190-199
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• 2020

Copper pyrophosphate baths were employed in order to study the dependencies of current efficiency, residual stress, surface morphology and microstructure of electrodeposited Cu thin layers on applied current density. The current efficiency was obtained to be more than about 90 %, independent of the applied current density. Residual stress of Cu electrodeposits was measured to be in the range of -30 MPa and 25 MPa with the increase of applied current density from 0.5 to 15 mA/㎠. Relatively smooth surface morphologies of the electodeposited Cu layers were obtained at an intermediate current range between 3 and 4 mA/㎠. The Cu electrodeposits showed FCC(111), FCC(200), and FCC(220) peaks and any preferred orientation was not observed in this study. The average crystalline size of Cu thin layers was measured to be in the range of 44~69 nm.

• Journal of Welding and Joining
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• v.13 no.2
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• pp.122-131
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• 1995

The effects of cooling rate on the microstructures, precipitation of Cu-cluster, .epsilon.-Cu and impact toughness of high strength low alloy(HSLA) steel were studied using hardness tester, impact tester, DSC(differential scanning calorimetry), AES(auger electron spectroscopy) and TEM(transmission electron microscopy). Not only the Cu-precipitates but also the segregation of Cu, As, Sb, P, S, N, Sn along grain boundary were not observed at the specimens heat treated from 800.deg. C to 300.deg. C with the cooling time of 12-125 sec. The Cu-cluster, .epsilon.-Cu are formed by introducing ageing after cooling and the effect of precipitates on hardening increase after cooling was the same in all cooling rate. The peak hardness was obtained at an ageing of 500.deg. C in all cooling conditions. The impact energy become higher as the cooling time increases. This fact can be explained to be due to the tempering effect applied on the cooling stage since the present alloy has a relatively high Ms temperature and the local high concentration of the retained austenite.

• Journal of Korean Society for Atmospheric Environment
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• v.9 no.4
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• pp.288-294
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• 1993

Flue gas control systems for small-scale combustors must be designed to provide highly effective removal of three criteria pollutants (S $O_{2}$, N $O_{x}$ and particulate matter), and must be safe, reliable and small. These requirements make dry, regenerative clean-up process particularly attractive and this paper describes a new concept for integrated pollutant control : a filter comprised of layered, gas permeable membranes that act as an S $O_{2}$ sorbant, a N $O_{x}$ reduction catalyst and a particulate filter. A mixed metal oxide sorbent, Cu-Ce was used as a sorbent/catalyst and the activity was compared with Cu-7Al. The S $O_{2}$ removal eficiency of Cu-Ce was increased with temperature increase up to 500$^{\circ}$C and the catalytic activity for NO was higher than that of Cu-7Al. By the sulfation of Cu-Ce, the reduction activity was increased at the temperature higher than 350$^{\circ}$C. The regeneration of Cu-Ce was very fast and some amount of elemental sulfar was found.

• Journal of Technologic Dentistry
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• v.27 no.1
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• pp.65-71
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• 2005

Experimental Ti-13%Zr and Ti-13%Zr-5%Cu alloys were made in an argon-arc melting furnace. The grade 2 CP Ti was used to control. The alloys were cast into phosphate bonded $SiO_2$ investment molds using an argon-arc casting machine, and The hardness and microstructures of the castings were investigated in order to reveal their possible use for new dental casting materials and to collect useful data for alloy design. The hardness of the Ti-13%Zr-5%Cu alloy(379Hv) became higher than that of Ti-13%Zr(317Hv) alloy, and the hardness of this alloys became higher than that of CP Ti(247Hv). Increasing in the hardness of the Ti-13%Zr-5%Cu alloy was considered to be solid solution hardening as the Ti-Zr system shows a completely solid solution for both high temperature $\beta$phase and low temperature $\alpha$ phase and also the inclusion of the eutectoid structure($\alpha Ti+Ti_{2}Cu$). No martensitic structures are observed in the specimen made of CP Ti, but Ti-13%Zr and Ti-13%Zr-5%Cu alloys show a kind of martensitic structure. Ti-13%Zr-5%Cu shows the finest microstructure. From these results, it was concluded that new alloys for dental casting materials should be designed as Ti-Zr-Cu based alloys.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.11-16
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• 2001

CuNi alloy films are deposited by co-sputtering of dual targets (Cu and Ni, respectively). Effects of the co-sputtering conditions, such as powers applied to the targets, deposition pressures, and substrate temperatures, on the structural and electrical properties of deposited films are systematically investigated. The composition ratio of Ni/Cu is almost linearly decreased by increasing the DC power applied to the Cu target from 25.6 W to 69.7 W with the RF power applied to the Ni target unchanged(140 W). it is noted that the chamber pressure during deposition and the film thickness give rise to a change of the Ni/Cu ratio within the films deposited. The former may be due to a higher sputtering yield of Cu atom and the latter due to the re-sputtering phenomenon of Cu atoms on the surface of deposited film. The film deposited at higher pressures or at lower substrate temperatures have a smaller crystallite size, a higher electrical resistivity, and much more voids. This may be attributed to a lower surface mobility of sputtered atoms over the substrate.