• Proceedings of the KIPE Conference
• /
• 1996.06a
• /
• pp.63-66
• /
• 1996

An micro model for the power insulated Gate Bipolar Transistor(IGBT) is developed. The model consistently described the IGBT steady-state current-voltage characteristics and switching transient current and voltage waveform for all loading conditions. The model is based on the equivalent circuit of a MOSFET with supplies the base current to a low-gain, high-level injection, bipolar transistor with its base virtual contact at the collector and of the base. Model results are compared with measured turn-on and turn-off waveform for different drive, load, and feedback circuits.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.3
• /
• pp.115-120
• /
• 2007

Reliability between passivated and unpassivated process with the base-exposed InGaP/GaAs HBTs was studied. A passivation of HBT was attempted by $SiO_2$ thin film deposition at $300^{\circ}C$ by means of PECVD. Base-exposed InGaP/GaAs HBTs before and after passivation were investigated and compared in terms of DC and RF performance. Over a total period of 30 days, passivated HBTs show only 2% degradation of DC current gain for the high current density of $40KA/cm^2$. The measured thermal resistance of $2{\times}30{\mu}m^2$ single emitter InGaP/GaAs HBT passivated with PECVD $SiO_2$ devices can be extracted and was founded to be 1430 K/W. The estimated MTTF was $2{\times}10^7hr\;at\;T_j=125^{\circ}C$ with an activation energy $(E_a)$ of 1.37 eV.

• Nuclear Engineering and Technology
• /
• v.54 no.2
• /
• pp.501-506
• /
• 2022

Long turn-off time limits high frequency operation of Bipolar Junction Transistors (BJTs). Turn-off time decreases with increases in the recombination rate of minority carriers at switching transients. Fast neutron irradiation on a Si BJT incurs lattice damages owing to the displacement of silicon atoms. The lattice damages increase the recombination rate of injected holes with electrons, and decrease the hole lifetime in the base region of pnp Si BJT. Fast neutrons generated from a beryllium target with 30 MeV protons by an MC-50 cyclotron were irradiated onto pnp Si BJTs in experiment. The experimental results show that the turn-off time, including the storage time and fall time, decreases with increases in fast neutron fluence. Additionally, it is confirmed that the base current increases, and the collector current and base-to-collector current amplification ratio decrease due to fast neutron irradiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.5
• /
• pp.401-406
• /
• 2005

Two dimensional MEDICI simulator is used to study the electrical characteristics of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics with the variations of p-base impurity concentrations and current flow. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have tile better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer u-base structure under the floating N+ emitter indicates to have the better characteristics of latch-up current and breakover voltage in spite of the same turn-off characteristics.

• Journal of Welding and Joining
• /
• v.16 no.4
• /
• pp.63-72
• /
• 1998

In this study, the effects of the current pulsing conditions, on the spatter generation rate during the $CO_2$ gas metal arc welding (GMAW) were investigated. Normally using the inverter type power supply, of which the welding current waveform was regulated to reduce the spatter generation rate, but in this study pulsing was imposed on the welding current. Observation of the metal transfer phenomena during the pulsed current GMAS indicated that the droplet transfer from the electrode via the short circuit transfer and the repelling transfer mode could be minimized by selecting optimum combinations of pulsing parameters, which include base and peak current, base and pak duration. It was also demonstrated in this study that proper combinations of the pulsing parameters led to reduce generation of spatters during GMAW shielded by $CO_2$ gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.10-12
• /
• 1996

AlGaAs/GaAs Heterojunotion Bipolar Transistors (HBTs) with various emitter areas were fabricated and the device size dependence on the current gain was examined. With the different emitter areas, the passivated devices having the same peripheral length were fabricated and measured. The measured base current density in the Gummel plots shows an ideality factor of nearly 2. It is found that as the emitter area becomes small, the base current density with the ideality factor of 2 increases linearly, and as the emitter perimeter/area ratio becomes large, the surface recombination current density component increases. The current gain performance in AlGaAs/GaAs HBTs is mainly determined by either the larger emitter area or the smaller ratio of the emitter perimeter to the emitter area. These results will be compared with experimental works for GaInP/GaAs HBTs

• Proceedings of the KIEE Conference
• /
• 1995.11a
• /
• pp.312-315
• /
• 1995

The base/gate drive suppression method proposed by Joshi and Bose is that which detects the output current polarity of the leg and, according to the polarity, suppresses the base/gate drive of one of the ore switching devices of the leg. This method has the merit that it does not have the conventional dead time problem, reduces the power loss of the driving circuit and others. But this method has difficulty in implementation. In this paper, a new base/gate drive suppression method by detecting not the output current polarity but the output voltage polarity is proposed. The proposed method is easier to implement than Joshi and Bose's method.

• Journal of Welding and Joining
• /
• v.31 no.1
• /
• pp.58-64
• /
• 2013

The following results were obtained, microstructures and tensile properties in arc brazed joints of DP(dual phase) steel using Cu-5.3wt%Sn insert metal was investigated as function of brazing current. 1) The Fusion Zone was composed of ${\alpha}Fe+{\gamma}Cu$ and Cu23Sn2. The reason for the formation of these solid solutions. Despite, Fe & Cu were impossible to solid solution at room temperature. It's melting & reaction to something of insert metal & Base Metal (DP Steel) by Arc. Brazing Process has faster cooling rate then Cast Process, Supersaturated solid solution at room temperature. 2) The increase Hardness of Fusion Zone was directly proportional to the rise of welding current. Because, ${\alpha}Fe+{\gamma}Cu$ phase (higher hardness than the Cu23Sn2.(104.1Hv < 271.9Hv)) Volume fraction was Growth, due to increasing the amount of base metal melting by High current. 3) The results of tensile shear test by Brazing, All specimens happen to fracture in Fusion Zone. On the other hand, when Brazing Current increasing tend to rise tensile load. but it was very small, about 26-30% of the base metal. 4) The result of fracture analysis, The crack initiate at Triple Point for meet to Upper B.M/Under B.M/Fusion Zone. This Crack propagated to Fusion zone. So ruptured by tensile strength. The Reason to in the fusion zone fracture, Fusion zone by Brazing of hardness (strength) was very lower then the base metal (DP steel). In addition the Fusion Zone's thickness in triple point was thin than the base metal's thickness in triple point.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.3
• /
• pp.147-151
• /
• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Journal of Power Electronics
• /
• v.12 no.2
• /
• pp.242-248
• /
• 2012

Self oscillating current fed push pull resonant inverters can be controlled without using special drivers. Dc current flows through the choke coil and the power switches, although the driving signals of the power switches are sinusoidal. When the base current is near zero, the transistors cannot be operated in switching mode. Hence higher switching power losses and instantaneous peak power during off transitions are observed. In this study, an alternative design has been proposed to overcome this problem. A prototype circuit has been built which provides dc bias current to the base of the transistors. Experimental results are compared with theoretical calculations to demonstrate the validity of the design. The proposed design decreases the peak and average power losses by about 8 times, when compared to conventional designs.