• Journal of information and communication convergence engineering
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• v.16 no.4
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• pp.248-251
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• 2018

To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.

• Food Science and Biotechnology
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• v.15 no.1
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• pp.133-137
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• 2006

Wheat gluten-chitosan composite film (WGCCF) can prevent moisture migration and enhance the antimicrobial properties of gluten in intermediate-moisture foods like sandwiches. To mimic the structure of actual sandwich-type products we developed multi-layer food models, where moisture content and water activity differ. Water activity gradients direct moisture migration and therefore determine product characteristics and product stability. A 10% wheat gluten film-forming solution was mixed with chitosan film-forming solution (0-3%, w/w) and evaporated to generate WGCCF. Addition of 3% chitosan enhanced the mechanical properties of the film composite, lowered its water vapor permeability, and improved its ability to protect against both, Streptococcus faecalis and Escherichia coli, in a 24 hr sandwich test (reduction of 1.3 and 2.7 log cycles, respectively, compared to controls). Best barrier and antimicrobial performance was found for 3% chitosan WGCCF at pH 5.1. Film of this type may find application as barrier film for intermediate-moisture foods.

• Food Science and Biotechnology
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• v.16 no.1
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• pp.62-66
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• 2007

Four different biopolyester films, two aliphatic polyesters including polylactides (PLA) and poly(3-hydroxy-butyrate-co-3-hydroxyvalerate (PHBV), and two aliphatic-aromatic copolyesters including Ecoplex and Biomax, were prepared using by thermo-compression, and their tensile and water barrier properties were determined. Among the films tested, PLA film was the most transparent (T: 95.8%), strongest, and stiffest (TS, 40.98 MPa; E, 1916 MPa), however it was rather brittle. In contrast, Ecoplex film was translucent while being the most flexible and resilient (EB, 766.8%). Biomax film was semitransparent and was the most brittle film tested (EB, 0.03%). All biopolyester films were water resistant exhibiting very low water solubility (WS) values ranging from 0.0.3 to 0.36%. PHBV film showed the lowest water vapor permeability (WVP) value ($1.26{\times}10^{-11}\;g{\cdot}m/m^2{\cdot}sec{\cdot}Pa$) followed by Biomax, PLA, and Ecoflex films, respectively. The water vapor barrier properties of each film were approximately 100 times higher than those of carbohydrate or protein-based films, but about 100 times lower than those of commodity polyolefin films such as low-density polyethylene (LDPE) or polypropylene (PP).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.210-210
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• 2012

Gas barrier coating from dense thin film deposition has been one of the important applications such as food-packaging and organic display. Especially for food-packaging, plastic container has been widely used due to its low price and high through-put in mass production. However, the plastic container with low surface energy like polypropylene (PP) has been limited to apply gas barrier coating. That is because a gas barrier coating could not adhere to PP due to its too low surface energy and high porosity of PP. In this research, we applied carbon coating consisting of Si and O as an interlayer between silicon oxide (SiOx) and PP. A carbon layer was found to provide better adhesion, which was experimentally proved by oxygen transmission rate (OTR) and SEM images. However, we also found that there is a limitation in the maximum thickness of a carbon layer and SiOx film due to their high stress level. For this conflict, we obtain the optimal thickness of a carbon layer and SiOx film showing optimal gas barrier property.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1634-1637
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• 2008

We will discuss encapsulation of OLEDs on both flexible and rigid glass substrates. Accelerated testing at 6CC/90RH and 85C/85RH is compared and acceleration factors for OLED and Calcium test samples are discussed.We have tested the stability and performance of our barrier coating to much higher temperatures: up to 140 C. Water Vapor Transmission rates at temperatures from 60 to 140 C are presented. Rates and methods for low cost manufacturing on a large scale are analysed.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.147-155
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• 1996

Optical properties of $TiO_2/M/Ag/M/TiO_2$ films have been changed with the diffusion barrier metal M. Optimum opticla properties of $TiO_2/M/Ag/M/TiO_2$ as the transparent heat mirror film, could be obtained with Ti among diffusion barrier metals of Ti, Cu, Zr and Al. $TiO_2/M/Ag/M/TiO_2$ film, which was fabricated by sputtering of 18 nm-thick $TiO_2$ and Ag, and 4nm-thick Ti, showed maximum transimittance of 89% at visible wavelength and infrared reflectance of 97% at wavelength of 3000 nm. Optical properties of this film was not degraded by Xenon-sunshine weather test for 240 hours. For specimens with barrier layers of Cu, Zr, and Al, degradation of optical properties by weather test was increased in a sequence of films with Cu, Zr, and Al barrier layers.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.29-31
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• 2019

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.283-287
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• 2002

We have studied Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate for application of interconnection metal in ULSI circuits. Zr(Si)N film was deposited with reactive DC magnetron sputtering system using $Ar/N_2$mixed gas. The value of the resistivity was the lowest for the ZrN film using 29 : 1 of Ar : $N_2$reactant gas ratio at room temperature and decreased with increasing of Si substrate temperature. As the value of ZrN film resistivity was decreased, the direction of crystal growth was toward to (002) plane. The barrier property of ZrN film added with Si was improved. But Si was added too much in ZrN film, the barrier property was degraded. The adhesive property was improved with increasing of Si in ZrN. For the analysis of the film, XRD, Optical microscopy, Scretch tester, so on were used.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.718-723
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• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.44-47
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• 2004

Fabrication of barrier layer on PES substrate and plastic OLED device by atomic layer deposition are carried out. Simultaneous deposition of 30nm of $AlO_x$ film on both sides of PES gives film MOCON value of 0.0615g/$m^2$.day (@38$^{\circ}C$, 100% R.H). Introduction of conformal $AlO_x$ film by ALD resulted in enhanced barrier properties for inorganic double layered film including PECVO $SiN_x$. Preliminary life time to 91% of initial luminance (1300 cd/$m^2$ ) for 100nm of PECVD $SiN_x$/30nm of ALD $AlO_x$ coated plastic OLED device was 260 hours.