• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

• 한국도로학회논문집
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• 제18권5호
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• pp.31-37
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• 2016

PURPOSES : The purpose of this study is to evaluate the effect of the quiet pavement on reducing a barrier height by using a prediction tool called SoundPLAN. METHODS : Firstly, the prediction was carried out to evaluate the difference in the maximum noise level at a building facade between the normal and the quiet pavements without a barrier. After calculating the noise reduction effect by the quiet pavement, a comparable barrier height to obtain the same noise reduction effect with it was predicted according to designable factors including road-building distance(10 m, 20 m, 40 m) and road-barrier distance(5 m, 10 m, 20 m, 30 m). RESULTS : The result showed that within the considered designable factors, the maximum barrier height was 37 m, 52 m, and 55 m to have the same noise reduction effect by the quiet pavement reducing 1 dBA, 3 dBA, and 5 dBA, respectively. It was evaluated that the barrier height increased with the increase of the road-building and road-barrier distances. To simulate the real situation in urban areas and to evaluate the combined effect of the normal/quiet pavement and barrier, the barrier height was fixed as 6 m. It was predicted that the noise level would reduce to as low as 0.2 dBA by the combination of normal pavement and barrier. On the other hand, the combination of the quiet pavement and barrier reduced 1.2 dBA, 3.2 dBA, and 5.2 dBA, respectively, for quiet pavement reducing 1 dBA, 3 dBA, and 5 dBA. CONCLUSIONS : A guideline needs to be suggested to select appropriate noise abatement schemes by considering factors such as the roadbuilding and road-barrier distances.

• Wind and Structures
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• 제20권4호
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• pp.509-525
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• 2015

A three-dimensional aerodynamic model and a vehicle dynamics model are established to investigate the effect of noise barrier on the dynamic performance of a high-speed train running on an embankment in crosswind in this paper. Based on the developed model, flow structures around the train with and without noise barrier are compared. Effect of the noise barrier height on the train dynamic performance is studied. Then, comparisons between the dynamic performance indexes of the train running on the windward track and on the leeward track are made. The calculated results show that the noise barrier has significant effects on the structure of the flow field around the train in crosswind and thus on the dynamic performance of the high-speed train. The dynamic performance of the train on the windward track is better than that on the leeward track. In addition, various heights of the noise barrier will have different effects on the train dynamic performance. The dynamic performance indexes keep decreasing with the increase of the noise barrier height before the height reaches a certain value, while these indexes have an inverse trend when the height is above this value. These results suggest that optimization on the noise barrier height is possible and demonstrate that the designed noise barrier height of the existing China Railway High-speed line analysed in this article is reasonable from the view point of the flow field structure and train dynamic performance although the noise barrier is always designed based on the noise-related standard.

• 한국전기전자재료학회논문지
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• 제22권6호
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• pp.457-461
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• 2009

In this paper, barrier height between Ni-silicide and source/drain is reduced utilizing Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. It is shown that the barrier height is decreased by Pd incorporation and is dependent on the Pd thickness. Therefore, Ni-silicide using the Pd stacked structure is promising for high performance nano-cale PMOSFET.

• 한국철도학회논문집
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• 제19권2호
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• pp.124-134
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• 2016

철도 선로에 근접하여 설치하는 근접 저상 방음벽은 방음벽 높이를 저감시키기 위한 방안으로 외국에서는 많은 연구가 수행되고 있으나 국내에서의 연구는 매우 미흡한 실정이다. 본 논문에서는 근접 저상 방음벽의 음향특성을 파악하고자 축척 모형을 제작하여 성능평가를 수행하였다. 실험결과, 'ㄱ'자형 방음벽 설치 시에는 방음벽의 안쪽뿐만 아니라 상부에도 흡음재를 설치하는 것이 삽입손실의 개선효과가 있는 것으로 분석되었고, 방음벽의 삽입손실 평가를 위해 단순한 경험식 대신에 경계요소법과 같은 보다 해석적인 방법으로 삽입손실을 예측할 필요가 있다. 또한, 흡음재를 부착한 근접 방음벽을 설치하면 승객 위치에서의 소음 증가현상은 미미한 것으로 분석되었다. 그리고, 근접 방음벽의 음향성능 예측을 위해 2차원 경계요소법을 이용한 소음해석을 수행하였으며, 측정결과와의 비교 분석을 수행함으로서 예측 프로그램의 활용 가능성을 검증하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권1호
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• pp.7-15
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• 2015

We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.66-67
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• 2002

Magnetic tunnel junction에서는 spin의 tunneling이 가장 기본적인 현상이기 때문에 tunnel junction의 특성은 tunnel barrier의 성질에 크게 의존한다. Tunnel barrier로는 지금까지 $Al_2$O$_3$가 주로 사용되고 있다. 하지만 $Al_2$O$_3$의 경우는 barrier height가 2-3 eV로 높기 때문에 저 저항의 tunnel junction을 형성하기 위해서는 Al의 두께가 1nm 이하로 낮아져야 한다. 따라서 이를 극복하기 위해서 $Al_2$O$_3$ 보다 낮은 barrier height를 갖는 절연막을 tunnel barrier로 사용하고자 하는 연구가 많이 진행되고 있다 (예를 들면 TaOx [1], ZrOx [2], GaOx [3], and HfOx [4]). (중략)

• 한국도로학회논문집
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• 제17권4호
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• pp.63-68
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• 2015

PURPOSES : A study on the efforts to minimize the road traffic noise has been underway. An attempt has been made to measure the noise level using a noise map; however, the attempt is limited to certain areas only. In general, a noise barrier is employed to prevent road traffic noise; however, unplanned noise barriers developed without considering the surrounding environment, including excessively high walls, cause problems such as infringement on prospect right. Noise ceiling at daytime in Korea is 68 dB(A), which is relatively higher than in other countries. METHODS: The noise barrier used mainly for road noise reduction was analyzed to estimate the optimal height. Related variables such as road width, the height of the upper part, distance to the building, and angle (for instance, $30^{\circ}$). RESULTS : A formula to calculate the optical height of the noise barrier, considering the road environment (i.e., parameters such as road width and distance to building), was developed in this study in an attempt to mitigate the noise generated from the road. CONCLUSIONS : The formula to calculate the noise barrier is expected to lead to cost saving, accurate installation of barriers, and protection of the right of prospect.

• ETRI Journal
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• 제24권6호
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• pp.455-461
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• 2002

This paper reports on estimating the Schottky barrier height of small contacts using a thermionic-field emission model. Our results indicate that the logarithmic plot of the current as a function of bias voltage across the Schottky diode gives a linear relationship, while the plot as a function of the total applied voltage across a metal-silicon contact gives a parabolic relationship. The Schottky barrier height is extracted from the slope of the linear line resulting from the logarithmic plot of current versus bias voltage across the Schottky diode. The result reveals that the barrier height decreases from 0.6 eV to 0.49 eV when the thickness of the barrier metal is increased from 500 ${\AA}$ to 900 ${\AA}$. The extracted impurity concentration at the contact interface changes slightly with different Ti thicknesses with its maximum value at about $2.9{\times}10^{20}\;cm^{-3}$, which agrees well with the results from secondary ion mass spectroscopy (SIMS) measurements.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.618-622
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• 2014

The temperature dependent characteristics on the properties of SiC Schottky Diode has been investigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottky diode were measured in the range of 300 ~ 500 K. Divided into pre- and post- irradiated device was measured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, the barrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier height after irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottky diode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottky diode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzed the effective barrier height and ideality factor of SiC Schottky diode as function of temperature.