• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.15-21
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• 2009

We proposed a fusion splicing method for low splicing loss between a single-mode fiber(SMF) and two different photonic crystal fibers(PCFs) such as a photonic bandgap fiber(PBGF) and highly nonlinear photonic crystal fiber(NL-PCF). The splicing loss between the SMF and PBGF is affected by air-hole collapse. Therefore, we optimized fusion splicer and reduced a splicing loss below 1.22 dB. We also inserted a Intra High Numerical Aperture(UHNA) fiber between the SMF and NL-PCF to achieve a splicing loss of below 2.59 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.861-868
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• 2017

Near band infrared imaging technique has adopted for imaging EL2 and shallow level distributions in undoped semi-insulating LEC GaAs. This technique, which relies on the mapping of near bandgap infrared transmission, is both rapid and non-destructive. Until now no quantitative analysis has been reported for near band edge region which gives the reverse contrast on EL2 absorption images. This paper presents the spectral, spatial and temperature dependence of photoquenching forward and inverse mechanism in the band edge domain for cells and walls and for direct and inverted contrast conditions during transitory regimes. The difference in the threshold for the EL2w and EL2b defects could be attributed to the contribution of a different electrical assistance due to a different species of impurities. Quantitative analysis results show an increased density of EL2w and a small reduction of EL2b in the region of the walls where there is a high density of dislocations.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.45-50
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• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.130-134
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• 2015

This research proposes the use of a composition modulated (ZrO₂)_x(Al₂O₃)_1-x film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO₂)_0.1(Al₂O₃)_0.9 or a (ZrO₂)_0.92(Al₂O₃)_0.08 trapping layer, the memory device using the composition modulated (ZrO₂)_x(Al₂O₃)_1-x as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO₂)_x(Al₂O₃)_1-x film is a promising candidate for future nonvolatile memory device applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.226-229
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• 2010

LED(Light Emitting Diode) is an emitting device which energy is same to the bandgap of p-type and n-type semiconductor junction. Recently high brightness LED is used in fish-luring light and traffic signal light alternative of normal light bulb, and widely used in the area of display pannel. Moreover nowadays LED has been used as a back light of LCD display. Recently, visible light communication(VLC) using LED, that allow two-way serial data communication between LEDs over a distance of sveral centimeters or meters, has been widely studied in the area of digital information transmission along with illumination and display. In this paper, we present LED communication system and their applications.

• Journal of the Korean institute of surface engineering
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• v.54 no.6
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• pp.340-347
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• 2021

Among various metal oxide semiconductors, ZnO has an excellent electrical, optical properties with a wide bandgap of 3.3 eV. It can be applied as a photocatalytic material due to its high absorption rate along with physical and chemical stability to UV light. In addition, it is important to control the morphology of ZnO because the size and shape of the ZnO make difference in physical properties. In this paper, we demonstrate synthesis of size-controlled ZnO tetrapods using an atmospheric pressure plasma system. A micro-sized Zn spherical powder was continuously introduced in the plume of the atmospheric plasma jet ignited with mixture of oxygen and nitrogen. The effect of plasma power and collection sites on ZnO nanostructure was investigated. After the plasma discharge for 10 min, the produced materials deposited inside the 60-cm-long quartz tube were obtained with respect to the distance from the plume. According to the SEM analysis, all the synthesized nanoparticles were found to be ZnO tetrapods ranging from 100 to 600-nm-diameter depending on both applied power and collection site. The photocatalytic efficiency was evaluated by color change of methylene blue solution using UV-Vis spectroscopy. The photocatalytic activity increased with the increase of (101) and (100) plane in ZnO tetrapods, which is caused by enhanced chemical effects of plasma process.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.60-63
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• 2023

The AlGaN/GaN heterostructure has high electron mobility due to the two-dimensional electron gas (2-DEG) layer, and has the characteristic of high breakdown voltage at high temperature due to its wide bandgap, making it a promising candidate for high-power and high-frequency electronic devices. Despite these advantages, there are factors that affect the reliability of various device properties such as current collapse. To address this issue, this paper used metal-organic chemical vapor deposition to continuously deposit AlGaN/GaN heterostructure and SiN passivation layer. Material and electrical properties of GaN HEMTs with/without SiN cap layer were analyzed, and based on the results, low-frequency noise characteristics of GaN HEMTs were measured to analyze the conduction mechanism model and the cause of defects within the channel.

• Journal of IKEEE
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• v.26 no.1
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• pp.50-55
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• 2022

SiC is a power semiconductor with a wide bandgap, high insulation failure strength, and thermal conductivity, but many deep-level defects. Defects that appear in SiC can be divided into two categories, defects that appear in physical properties and interface traps that appear at interfaces. In this paper, Z_1/2 trap concentration 0 ~ 9×10¹⁴ cm^-3 reported at room temperature (300 K) is applied to SiC substrates and epi layer to investigate turn-on characteristics. As the trap concentration increased, the current density, Shockley-read-Hall (SRH), and Auger recombination decreased, and Ron increased by about 550% from 0.004 to 0.022 mohm.