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http://dx.doi.org/10.6109/jkiice.2017.21.5.861

Quantitative Analysis on Near Band Edge Images in GaAs Wafer  

Kang, Seong-jun (Department of Electronics, Information and Communication Engineering, Mokpo National University)
Na, Cheolhun (Department of Electronics, Information and Communication Engineering, Mokpo National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.21, no.5, 2017 , pp. 861-868 More about this Journal
Abstract
Near band infrared imaging technique has adopted for imaging EL2 and shallow level distributions in undoped semi-insulating LEC GaAs. This technique, which relies on the mapping of near bandgap infrared transmission, is both rapid and non-destructive. Until now no quantitative analysis has been reported for near band edge region which gives the reverse contrast on EL2 absorption images. This paper presents the spectral, spatial and temperature dependence of photoquenching forward and inverse mechanism in the band edge domain for cells and walls and for direct and inverted contrast conditions during transitory regimes. The difference in the threshold for the EL2w and EL2b defects could be attributed to the contribution of a different electrical assistance due to a different species of impurities. Quantitative analysis results show an increased density of EL2w and a small reduction of EL2b in the region of the walls where there is a high density of dislocations.
Keywords
Defect concentration; Spectral imaging; LEC grown SI GaAs; Near band edge;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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