• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.19 no.8
• /
• pp.933-939
• /
• 2008

In this paper, a new composite electromagnetic bandgap(EBG) structure using magnetic materials is proposed for simultaneous switching noise(SSN) suppression in the high-speed digital circuits. The proposed EBG structure has periodic unit cells of square-patches connected by spiral-shaped bridges. The magnetic materials are located on the unit cells of spiral-shaped EBG. The real part of the permeability shifts bandgap to the lower frequency region due to the increased effective inductance. The imaginary part of the permeability has magnetic loss that decreases parasitic LC resonance peaks from between the unit cells. As a result, the proposed structure has the lower cut-off frequency compared with conventional EBG structure and -30 dB SSN suppression bandwidth from 175 MHz to 7.7 GHz. The proposed structure is expected to improve the power integrity and reduce the size of the EBG power plane.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.2
• /
• pp.73-78
• /
• 2008

We investigated for comparison of large-area i-a-Si:H and p-a-SiC:H film quality like thickness uniformity, optical bandgap and surface roughness using both ICP-CVD and PECVD on the large-area substrate(diameter of 100 mm). As a whole, films using ICP-CVD could be achieved much uniform thickness and bandgap of that using PECVD. For i-a-Si:H films, its uniformity of thickness and optical bandgap were 2.8 % and 0.38 %, respectively. Also, thickness and optical bandgap of p-a-SiC:H films using ICP-CVD could be obtained at 1.8 % and 0.3 %, respectively. In case of surface roughness, average surface roughness (below 5 nm) of ICP-CVD film could be much better than that (below 30 nm) of PECVD film. HIT solar cell with 2 wt%-AZO/p-a-SiC:H/i-a-Si:H/c-Si/Ag structure was fabricated and characterized with diameter of 152.3 mm in this large-area ICP-CVD system. Conversion efficiency of 9.123 % was achieved with a practical area of $100\;mm\;{\times}\;100\;mm$, which can show the potential to fabrication of the large-area solar cell using ICP-CVD method.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.6
• /
• pp.52-57
• /
• 2009

This paper presents a low-noise low-dropout linear regulator that is suitable for on-chip integration with RF transceiver ICs. In the bandgap reference, a stacked diode structure is adopted for saving silicon area as well as maintaining low output noise characteristic. Theoretical analysis for supporting the approach is also described. The linear regulator is fabricated in $0.18{\mu}m$ CMOS process. It operates with an input voltage range of 2.2 V - 5 V and provide the output voltage of 1.8 V and the output current up to 90 mA. The measured line and load regulation is 0.04%/V and 0.46%, respectively. The output noise voltage is measured to be 479 nV/$^\surd{Hz}$ and 186 nV/$^\surd{Hz}$ from 100 Hz and 1 kHz offset, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.45 no.9
• /
• pp.49-54
• /
• 2008

In this paper, the power added efficiency(PAE) of class F power amplifier is improved by applying a new Photonic Bandgap (PBG) structure on the output of amplifier. The proposed spiral PBG structure is a two-dimensional (2-D) periodic lattice patterned on a dielectric slab that does not require nonplanar fabrication process. This structure bas higher suppression performance at second harmonic. Also, It has a sharp skirt property. This new PBG structure can be applied with class F power amplifier for efficiency improvement. We obtained the PAE of 73.62 % for CDMA applications, and the PAE performance is improved as much as 6.2 % compared with that of a conventional class F power amplifier.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.8
• /
• pp.1544-1551
• /
• 2007

A start-up circuit of the bandgap reference voltage generator of cascode current mirror type with wide operating voltage range and enhanced power-up characteristics is proposed in the paper. It is confirmed by simulation that the newly proposed start-up circuit does not affect the operation of the bandgap reference voltage generatory even though the supply voltage(VDDA) is higher and has more stable power-up characteristic than the conventional start-up circuit. Test chips are designed and fabricated with $0.18{\mu}m$ tripple well CMOS process and their test has been completed. The mean value of measured the reference voltage(Vref) is 738mV and The three sigma value($3{\sigma}$) is 29.88mV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.6
• /
• pp.528-533
• /
• 2019

We investigated the growth of $(Al_xGa_{1-x})_2O_3$ thin films on c-plane sapphire substrates that were grown by mist chemical vapor deposition (mist CVD). The precursor solution was prepared by mixing and dissolving source materials such as gallium acetylacetonate and aluminum acetylacetonate in deionized water. The [Al]/[Ga] mixing ratio (MR) of the precursor solution was adjusted in the range of 0~4.0. The Al contents of $(Al_xGa_{1-x})_2O_3$ thin films were increased from 8 to 13% with the increase of the MR of Al. As a result, the optical bandgap of the grown thin films changed from 5.18 to 5.38 eV. Therefore, it was determined that the optical bandgap of grown $(Al_xGa_{1-x})_2O_3$ thin films could be effectively engineered by controlling Al content.

• Advances in nano research
• /
• v.12 no.2
• /
• pp.213-221
• /
• 2022

Silicon carbide (SiC) is a binary carbon-silicon compound. In its two-dimensional form, monolayer SiC is composed of a monolayer carbon and silicon atoms constructed as a honeycomb lattice. SiC has recently been receiving increasing attention from researchers owing to its intriguing electronic properties. In this present work, SiC nanoribbons (SiCNRs) are modelled and simulated to obtain accurate electronic properties, which can further guide fabrication processes, through bandgap engineering. The primary objective of this work is to obtain the electronic properties of monolayer SiCNRs by applying numerical computation methods using nearest-neighbour tight-binding models. Hamiltonian operator discretization and approximation of plane wave are assumed for the models and simulation by applying the basis function. The computed electronic properties include the band structures and density of states of monolayer SiCNRs of varying width. Furthermore, the properties are compared with those of graphene nanoribbons. The bandgap of ASiCNR as a function of width are also benchmarked with published DFT-GW and DFT-GGA data. Our nearest neighbour tight-binding (NNTB) model predicted data closer to the calculations based on the standard DFT-GGA and underestimated the bandgap values projected from DFT-GW, which takes in account the exchange-correlation energy of many-body effects.

• Current Photovoltaic Research
• /
• v.11 no.3
• /
• pp.67-74
• /
• 2023

The earth-abundant element-based Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (V_oc) and short circuit current density (J_sc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.436-436
• /
• 2009

현재 상용화되어 있는 결정질 태양전지의 경우 높은 실리콘 가격으로 인해 저가화에 어려움을 격고 있다. 따라서 태양전지 저가화의 한 방법으로 박막태양전지가 주목을 받고 있다. P-I-N 구조의 박막태양전지에서 각 층의 thickness, activation energy, energy bandgap은 고효율 달성을 위한 중요한 요소이다. 본 논문에서는 박막태양전지 P-I-N layer의 가변을 통하여 고효율을 달성하기 위한 simulation을 수행하였다. 가변 조건으로는 p-layer의 thickness, activation energy 그리고 energy bandgap을 단계별로 변화시켰고 i-layer는 thickness를 n-layer는 thickness와 activation energy를 가변하여 최적의 조건을 찾아 분석하였다. 최종 simulation 결과 p-layer의 thickness 5nm, activation energy 0.3eV 그리고 energy bandgap 1.8eV에서, i-layer thickness 400nm, n-layer thickness 30nm, activation energy 0.2eV에서 최고 효율 11.08%를 달성하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.437-437
• /
• 2009

현재 상용화되어 있는 결정질 태양전지의 경우 높은 실리콘 가격으로 인해 저가화에 어려움을 격고 있다. 따라서 태양전지 저가화의 한 방법으로 박막태양전지가 주목을 받고 있다. P-I-N 구조의 박막태양전지에서 I-layer 각 층의 thickness, activation energy, energy bandgap은 고효율 달성을 위한 중요한 요소이다. 본 논문에서는 박막태양전지 P-I-N layer의 가변을 통하여 고효율을 달성하기 위한 simulation을 수행하였다. 가변 조건으로는 p-layer의 thickness, activation energy 그리고 energy bandgap을 단계별로 변화시켰고 i-layer는 thickness를 n-layer는 thickness와 activation energy를 가변하여 최적의 조건을 찾아 분석하였다. 최종 simulation 결과 p-layer의 thickness 5nm, activation energy 0.3eV 그리고 energy bandgap 1.8eV에서, i-layer thickness 400nm, n-layer thickness 30nm, activation energy 0.2eV에서 최고 효율 11.08%를 달성하였다.