• Journal of information and communication convergence engineering
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• v.15 no.4
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• pp.237-243
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• 2017

This paper presents an analysis of the electromagnetic interference of a heterogeneous power bus where electromagnetic bandgap (EBG) cells are irregularly arranged. To mitigate electrical-noise coupling between high-speed circuits, the EBG structure is placed between parallel plate waveguide (PPW)-based power buses on which the noise source and victim circuits are mounted. We examine a noise suppression characteristic of the heterogeneous power bus in terms of scattering parameters. The characteristics of the dispersion and scattering parameters are compared in the sensitivity analysis of the EBG structure. Electric field distributions at significant frequencies are thoroughly examined using electromagnetic simulation based on a finite element method (FEM). The noise suppression characteristics of the heterogeneous power bus are demonstrated experimentally. The heterogeneous power bus achieves significant reduction of electrical-noise coupling compared to the homogeneous power buses that are adopted in conventional high-speed circuit design. In addition, the measurements show good agreement with the FEM simulation results.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.4
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• pp.42-50
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• 2003

This paper presents an embedded RC oscillator which has temperature compensation circuits. The conventional RC oscillator has frequency deviation about 15%, which is caused by variation of resistors and the reference voltage of schmitt trigger from the temperature condition. In this paper, the proposed circuit use a CMOS bandgap reference having balanced current temperature coefficients as a triggering voltage of schmitt trigger. The constant current sources consist of current mirror circuit with the positive and negative temperature coefficient. The proposed circuit shows less 3% frequency deviation for variation of temperature, supply voltage and process parameters.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.4
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• pp.611-621
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• 2001

This paper presents a design methodology of bandpass filter by using defect modes in photonic bandgap (PBG) structures. PBG structures are realized with alternating section of microstrip line arranged in a periodical manner. A passband is created within the stopband of PBG structures with defect modes, which can be generated by changing the period of certain part of PBG structure. We also extract a simple equivalent circuit of a bandstop filter by using several LC sections.

• Journal of the Optical Society of Korea
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• v.20 no.6
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• pp.733-738
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• 2016

We calculate optical properties of guided modes of a hybrid-guiding photonic crystal fiber. The design and modeling of such hybrid-guiding PCF is made by replacing air holes with inserts of high refractive index material layer by layer in order. The optical properties such as mode intensity profile, mode dispersion, optical birefringence, confinement loss, and chromatic dispersion during transition of the guiding mechanism are analyzed and discussed. The guided modes in the hybrid-guiding region are also compared with those of reference index-guiding and bandgap-guiding photonic crystal fibers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.1
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• pp.1-6
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• 2002

This paper presents that photonic bandgap structures suppressing the propagation of surface waves can improve the performance of the patch antennas on a thick and high dielectric constant substrate. The forbidden propagation of surface wave due to the photonic bandgap enhances the radiation efficiency and reduces the back radiation drastically.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.256-258
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• 2009

현재 상용화되어 있는 결정질 태양전지의 경우 높은 실리콘 가격으로 인해 저가격화에 어려움을 격고 있다. 따라서 태양전지 저가화의 한 방법으로 박막태양전지가 주목을 받고 있다. P-I-N 구조의 박막태양전지에서 각 층의 thickness, activation energy, energy bandgap은 고효율 달성을 위한 중요한 요소이다. 본 논문에서는 박막태양전지 p-layer의 가변을 통하여 고효율을 달성하기 위한 simulation을 수행하였다. 가변 조건으로는 thickness $5\sim25nm$, activation energy $0.3\sim0.6$ eV 그리고 energy bandgap $1.6\sim1.8$ eV까지 단계별로 변화시켰다. 최종 simulation 결과 p-layer의 thickness 5nm, activation energy 0.3 eV 그리고 energy bandgap 1.8 eV에서 최고 효율 11.08%를 달성하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.38-41
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• 1994

The method of passivation for protecting the $Hg_{1-x}Cd_{x}$Te surface is important device fabrication process. Because the surface components are highly reactive leading to its chemical and electrical instability. Especially. the material of detecting for infrared radiation, of which composition is x=0.2 or 0.3, is narrow bandgap semi- conductor. The narrow bandgap semi conductors are largely governed by the properties of the semiconductor surface. The narrow bandgap semi-conductors are largely governed by the properties of the semiconductor surface. The electro-chemical processing of $Hg_{1-x}Cd_{x}$Te allows rigorous control of the surface chemistry and provides an in-suit monitor of surface reaction. So electro-chemical reduction at specific potential can be selectively eliminated the undesirable species on the surface and mainpulated to reproducibly attain the desired stoichiometry. This method shows to assess the quality of chemically treated good $Hg_{1-x}Cd_{x}$Te surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.808-813
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• 2009

Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of $N_2$ to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at $25^{\circ}C$ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of $32.3\;cm^2$/Vsec was observed for the film grown at $400^{\circ}C$.

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.437-447
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• 2018

Visible-light-driven wide bandgap semiconductor photocatalysts were commonly developed via doping or coupling with another narrow bandgap metal oxide. However, these approaches required extra processing. The aim of study was to evaluate the photocatalytic performance of narrow bandgap $WO_x$ nanoparticles. A mixture of $WO_2$ and $WO_3$ nanoparticles were synthesized using solution precipitation technique. The photodegradation of RhB by these nanoparticles more effective in UV light than in visible light. In antibacterial susceptibility assay, $WO_x$ nanoparticles demonstrated good antibacterial against Gram-positive bacteria. The cell wall of bacterial was the main determinant in antibacterial effect other than $W^{4+}/W^{6+}$ ions and ROS.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.4B
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• pp.406-409
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• 2001

본 논문에서는 IMT-2000 대역에서 전방급전 전력증폭기의 선형성을 개선하여 효율과 대역폭을 극대화 하기 위해 Photonic Bandgap(PBG), 전치왜곡, 2차고조파 튜닝 방식으 f동시에 주 증폭기에 적용하였다. 2차 하모닉 성분이 2차고조파 튜닝 방식에 의해 우수하게 제거되고, 3차 하모닉 성분이 전치왜곡 방식에 의해 제거되며 출력단위 PBG느 s고아대역 특성으로 4차 하모닉 이상까지 제거하는 우수한 특성을 보여주었다. 총체적으로 기존의 전방급전 전력증폭기보다 IMD가 최고 15dBc, 효율은 4%, 대역폭은 2배이상 확대됨으로 전력효율과 대역폭을 극대화시킬 수 있었다.