• Advances in nano research
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• 제15권5호
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• pp.385-399
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• 2023

Hexagonal boron nitride (h-BN), commonly referred to as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator characterized by high thermal stability and a wide bandgap semiconductor property. This study delves into the electronic properties of two BNNR configurations: Armchair BNNRs (ABNNRs) and Zigzag BNNRs (ZBNNRs). Utilizing the nearest-neighbour tight-binding approach and numerical methods, the electronic properties of BNNRs were simulated. A simplifying assumption, the Hamiltonian matrix is used to compute the electronic properties by considering the self-interaction energy of a unit cell and the interaction energy between the unit cells. The edge perturbation is applied to the selected atoms of ABNNRs and ZBNNRs to simulate the electronic properties changes. This simulation work is done by generating a custom script using numerical computational methods in MATLAB software. When benchmarked against a reference study, our results aligned closely in terms of band structure and bandgap energy for ABNNRs. However, variations were observed in the peak values of the continuous curves for the local density of states. This discrepancy can be attributed to the use of numerical methods in our study, in contrast to the semi-analytical approach adopted in the reference work.

• 한국항행학회논문지
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• 제28권1호
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• pp.129-135
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• 2024

본 연구에서는 고속 반도체 패키지 및 PCB 내 노이즈 저감에 활용되는 비주기 전자기 밴드갭 기반 전원분배망에 대한 해석 방안을 제안한다. 비주기 전자기 밴드갭은 고속 반도체 시스템 성능 저하의 주요 원인 중 하나인 고주파·광대역 전원 노이즈를 효율적으로 감쇠할 수 있는 방안이지만 해석 시간 증대로 인해서 노이즈 감쇠 특성을 예측하는 데 어려움이 있다. 제안하는 해석적 방법에서는 전자기 밴드갭 단위셀 결합 구조에 대한 임피던스 파라미터를 도출하며 국소 배치된 전자기 밴드갭 구조를 포함하는 전원분배망의 전체 임피던스 파라미터를 도출한다. 국소배치된 전자기 밴드갭 구조의 임피던스 파라미터와 기존 전원분배망 구조의 임피던스를 효율적으로 등가치환할 수 있는 수식적인 방안을 제시한다. 제안하는 해석적 방법을 검증하기 위해서 전자기 밴드갭 구조가 국소배치된 PCB 테스트 샘플을 제작했다. 이 구조에 대한 3차원 전자장 시뮬레이션 결과, 측정결과, 제안 방안 결과를 비교한 결과 제안하는 해석적 방안은 높은 정확도를 보여줬으며 기존 3차원 전자장 시뮬레이션 기반 해석 방법 대비 99.7 % 해석 시간 단축을 달성했다.

• Advances in nano research
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• 제17권2호
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• pp.137-147
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• 2024

Graphene nanoribbons (GNRs) are considered a promising alternative to graphene for future nanoelectronic applications. However, GNRs-based device modeling is still at an early stage. This research models the electronic properties of n-doped rough-edged 13-armchair graphene nanoribbons (13-AGNRs) and quantum transport properties of n-doped rough-edged 13-armchair graphene nanoribbon field-effect transistors (13-AGNRFETs) at different doping concentrations. Step-up and edge doping are used to incorporate doping within the nanostructure. The numerical real-space nearest-neighbour tight-binding (NNTB) method constructs the Hamiltonian operator matrix, which computes electronic properties, including the sub-band structure and bandgap. Quantum transport properties are subsequently computed using the self-consistent solution of the two-dimensional Poisson and Schrödinger equations within the non-equilibrium Green's function method. The finite difference method solves the Poisson equation, while the successive over-relaxation method speeds up the convergence process. Performance metrics of the device are then computed. The results show that highly doped, rough-edged 13-AGNRs exhibit a lower bandgap. Moreover, n-doped rough-edged 13-AGNRFETs with a channel of higher doping concentration have better gate control and are less affected by leakage current because they demonstrate a higher current ratio and lower off-current. Furthermore, highly n-doped rough-edged 13-AGNRFETs have better channel control and are less affected by the short channel effect due to the lower value of subthreshold swing and drain-induced barrier lowering. The inclusion of dopants enhances the on-current by introducing more charge carriers in the highly n-doped, rough-edged channel. This research highlights the importance of optimizing doping concentrations for enhancing GNRFET-based device performance, making them viable for applications in nanoelectronics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1523-1525
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• 1999

ZnO is a wide-bandgap II-VI semiconductor and has a variety of potential application. ZnO exhibits good piezoelectric, photoelectric and optic properties, and is good for a electroluminescence device. ZnO films have been deposited at (0001) shappire by PLD technique. Chamber was evacuated by turbomolecular pump to a base pressure of $1{\times}10^{-6}$ Torr Nd:YAG pulsed laser was operated at ${\lambda}=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C$ to $700^{\circ}C$. At aleady works, UV emission and green-yellow PL was observed. In this work, ZnO films showed UV, violet, green and yellow emissions. UV emission was enhanced by increasing partial oxygen pressure. We investigated relationship between partial oxygen pressure and UV emission.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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• pp.149-154
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• 1997

광소자 및 새로운 개념의 전력소자 응용을 위하여 Wide Bandgap 반도체에 대한 관심이 급증되고 있다. 특히 직접천이형인 GaN는 청색 발광소자 응용 및 고출력, 고주파용 전력소자 응용에 이상적인 전자물성을 갖고 있다. 따라서 본 연구에서는 GaCl$_3$와 NH$_3$를 source gas로 하는 CVPE법을 사용하여 (0001) sapphire와 비교하였다. 기판의 증착온도 104$0^{\circ}C$에서 source gas의 III/V flow rate를 2로 분석하여 45분간 성장시킨 경우 그 증착속도는 약 40 $\mu\textrm{m}$/hr 정도였으며, 이 때 XRD을 향상시키기 위하여 증착이전에 기판의 표면에 증착온도에서 NH$_3$를 이용한 nitridation 처리를 하였으며, 그 처리시간이 3분일 때 XRD의 FWHM 특성이 가하여 조사한 결과 363 nm에서 peak가 검출되었다. 본 연구에서는 양질의 GaN 박막성장을 위한 증착조건 인자중 source gas의 flow rate가 가장 중요한 변수임을 적정 온도 범위가 75$0^{\circ}C$ 근처로 조사되었다. 실험과 모사결과의 박막 증착 최적온도의 차이는 GaN 증착시의 반응 Kinetics가 느리기 때문인 것으로 해석된다.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.12-15
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• 전기학회논문지
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• 제62권4호
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• pp.517-522
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• 2013

The spurious electromagnetic radiation is generated due to the RF unbalanced current on a conductive cable connecting an electronic device to another. A metamaterial-based filtering geometry with frequency selectivity is suggested to reduce the radiation with a bandgap structure, where the right-handed inductance and capacitance stem from the transmission-like configuration between the cable and the metal protrusion, and the left-handed components come from the narrow cavities. The effect of the structure on the unbalanced current pulse and its spurious radiation is presented in the FDTD-method frame work.

• Journal of Power Electronics
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• 제12권1호
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• pp.19-23
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• 2012

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.83.1-83.1
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• 2010

Hydrogenated a-SiGe middle cell for triple junction solar cell was investigated with various process parameters. a-SiGe I-layer was deposited at substrate temperature $245^{\circ}C$ and hydrogen content(R) was up to 26.7. Low optical bandgap(1.45eV) of a-SiGe cell was applied for middle cell although a-SiGe single cell efficiency with low Ge content was higher. And this cell was applied to the middle cell of a glass superstrate type a-Si/a-SiGe/uc-Si triple junction solar cell. The triple junction solar cell was resulted in the initial efficiency of about 9%, area $0.25cm^2$, under global AM 1.5 illumination.

• 대한전자공학회논문지SD
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• 제39권10호
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• pp.9-15
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• 2002

드리프트 영역에서의 속도 오버슈트 효과를 이용하여 서브밀리미터파 주파수 영역에서 동작하는 새로운 주행 시간 소자를 제안한다. 이 소자를 속도 오버슈트 주행 시간(VOTT) 다이오드라 명명한다. 이 소자는 캐리어 주입 메커니즘으로 빠르게 이루어지는 이종구조 터널링을 이용하며, 속도 오버슈트 효과를 최적화하기 위하여 짧은 드리프트 영역을 갖는다. 변환효율을 증대시키기 위하여 에너지 대역 간극을 경사시키는 방법으로 드리프트영역을 설계한다. 모의실험결과에 따르면 이 소자는 THz 영역에서 동작하리라 기대된다.