• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.198-203
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• 2013

Dye-sensitized solar cells (DSSCs) based on titanium dioxide ($TiO_2$) have been extensively studied because of their promising low-cost alternatives to conventional semiconductor based solar cells. DSSCs consist of molecular dye at the interface between a liquid electrolyte and a mesoporous wide-bandgap semiconductor oxide. Most efforts for high conversion efficiencies have focused on dye and liquid electrolytes. However, interface engineering between dye and electrode is also important to reduce recombination and improve efficiency. In this work, for interface engineering, we deposited semiconducting ferroelectric $BiFeO_3$ with bandgap of 2.8 eV on $TiO_2$ nanoparticles and nanotubes. Photovoltaic properties of DSSCs were characterized as a function of thickness of $BiFeO_3$. We showed that ferroelectric $BiFeO_3$-coated $TiO_2$ electrodes enable to increase overall efficiency of DSSCs, which was associated with efficient electron transport due to internal electric field originating from electric polarization. It was suggested that engineering the dye-$TiO_2$ interface using ferroelectric materials as inorganic modifiers can be key parameter for enhanced photovoltaic performance of the cell.

• Journal of the Korean Applied Science and Technology
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• v.31 no.3
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• pp.337-344
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• 2014

In this paper, we have examined the interaction of low bandgap polymer {poly(2-heptadecyl-4-vinylthieno[3,4-d]thiazole)(PHVTT)} with ionic liquids. Further, we have studied the temperature dependent interactions between the ionic liquids [tri-butyl methyl ammonium methyl sulfate ([TBMA][$MeSO_4$]), methyl imidazolium chloride ([MIM]Cl) and butyl methyl imidazolium chloride ([BMIM]Cl)] and polymer using UV-vis spectroscopy, FT-IR spectroscopy, photoluminescence (PL) spectroscopy, as a function of temperature at 21, 28, 32, $37^{\circ}C$. These experimental results suggest that interactions of polymer with ionic liquids ([MIM]Cl, [TBMA][$MeSO_4$]) showed weak interactions by increasing temperature but [BMIM]Cl has no significant effect with increase in temperature.

• Journal of Powder Materials
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• v.26 no.3
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• pp.237-242
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• 2019

In this study, ultrasonic spray pyrolysis combined with salt-assisted decomposition, a process that adds sodium nitrate ($NaNO_3$) into a titanium precursor solution, is used to synthesize nanosized titanium dioxide ($TiO_2$) particles. The added $NaNO_3$ prevents the agglomeration of the primary nanoparticles in the pyrolysis process. The nanoparticles are obtained after a washing process, removing $NaNO_3$ and NaF from the secondary particles, which consist of the salts and $TiO_2$ nanoparticles. The effects of pyrolysis temperature on the size, crystallographic characteristics, and bandgap energy of the synthesized nanoparticles are systematically investigated. The synthesized $TiO_2$ nanoparticles have a size of approximately 2-10 nm a bandgap energy of 3.1-3.25 eV, depending on the synthetic temperature. These differences in properties affect the photocatalytic activities of the synthesized $TiO_2$ nanoparticles.

• Korean Journal of Metals and Materials
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• v.49 no.7
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• pp.583-588
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• 2011

$Cd_xZn_{1-x}O$ thin films were grown on quartz substrates by using the sol-gel spin-coating method. The mole fraction, x, of the $Cd_xZn_{1-x}O$ thin films was controlled from 0 to 1 by changes in the content ratio of the cadmium acetate dehydrate [$Cd{(CH_3COO)}_2{\cdot}2H_2O$] and zinc acetate dehydrate [$Zn{(CH_3COO)}_2{\cdot}2H_2O$]. The effects of the mole fraction on the morphological, structural, and optical properties of the $Cd_xZn_{1-x}O$ thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-visible spectroscopy. The $Cd_xZn_{1-x}O$ thin films exhibited the polygonal surface morphology and their grain size was increased ranging from 42.1 to 63.9 nm with the increase in the mole fraction. It was observed that the absorption bandgap of the $Cd_xZn_{1-x}O$ thin films decreased from 3.25 to 2.16 eV as the mole fraction increased and the Urbach energy ($E_U$) values changed inversely to the optical bandgap of the $Cd_xZn_{1-x}O$ thin films.

• Nuclear Engineering and Technology
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• v.54 no.10
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• pp.3841-3848
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• 2022

The effect of modifiers on the optical features and radiation defying ability of the Eu³⁺ ions doped multi constituent glasses was examined. XRD has established the amorphous nature of the specimen. The presence of various functional/fundamental groups in the present glasses was analyzed through FTIR spectra. The physical, structural and elastic traits of the glasses were explored. The variation in the structural compactness of the glass structure according to the incorporated modifier was enlightened to describe their suitability for a better shielding media. For the examined glasses, the metallization criterion value varied in the range 0.613-0.692, indicating the non-metallic character of the glasses with possible nonlinear optical applications. The computed elastic moduli expose the Li-containing glass (BTLi:Eu) to be tightly packed and rigid, which is a requirement for a better shielding channel. Furthermore, the optical bandgap and the Urbach energy values are calculated based on the optical absorption spectra. The evaluated bonding parameters revealed the nature of the fabricated glasses covalent. In addition, we investigated the radiation attenuation attributes of the prepared Eu³⁺ ions doped multi constituent glasses using Phy-X software. We determined the linear attenuation coefficient (LAC) and reported the influence of the five oxides Li₂O₃, CaO, BaO, SrO, and ZnO on the LAC values. The LAC varied between 0.433 and 0.549 cm^-1 at 0.284 MeV. The 39B₂O₃-25TeO₂-15Li₂O₃-10Na₂O-10K₂O-1Eu₂O₃ glass has a much smaller LAC than the other glasses.

• Journal of the Korea Society of Computer and Information
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• v.27 no.8
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• pp.211-218
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• 2022

In this paper, a computer simulation program was developed to interpret the results measured by photoreflectance spectroscopy. The developed program is implemented so that the user can easily change the factors required for optical modulation characteristic interpretation, and the result of the value can be checked simultaneously with the actual measurement result. The results obtained by photoreflectance spectroscopy are obtained by mixing a third derivative function form (TDFF) modulated around a bandgap with a Franz-Keldysh oscillation (FKO) signal due to an electric field at a surface and an interface higher than the bandgap. Through the computer simulation program, the optical characteristics that appear in the GaSb Epi layer formed as a single layer were analyzed, and very useful results were obtained by specializing in optical modulation analysis. In addition, a Fast Fourier Transform (FFT) analysis tool was added to facilitate frequency characteristics analysis of FKO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.74-80
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• 2023

Gallium oxide (Ga₂O₃) thin films were grown on c-, a-, m-, r-plane sapphire substrates using a mist chemical vapor deposition system. Various growth temperature range of 400~600℃ was applied for Ga₂O₃ thin film deposition. Then, several structural properties were characterized such as film thickness, crystal phase, lattice orientation, surface roughness, and optical bandgap. Under the certain growth temperature of 500℃, all grown Ga₂O₃ featured rhombohedral crystal structures and well-aligned preferred orientation to sapphire substrate. The films grown on c-and r-plane sapphire substrates, showed low surface roughness and large optical bandgap compared to those on a-and m-plane substrates. Therefore, various sapphire orientation can be potentially applicable for future Ga₂O₃-based electronics applications.

• Advances in materials Research
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• v.12 no.3
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• pp.179-192
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• 2023

We have studied the structural and optical properties of the non-doped and Co 0.08 at.%, Co 0.02 at.%, and Co 0.11 at.% doped ZnO nanorods (NRs) synthesized using the simple low-temperature chemical bath deposition (CBD) method at 95℃ for 2 hours. The scanning electron microscope (SEM) images confirmed the morphology of the ZnO NRs are affected by Co incorporation. As observed, the Co 0.08 at.% doped ZnO NRs have a larger dimension with an average diameter of 153.4 nm. According to the International Centre for Diffraction Data (ICDD) number #00-036-1451, the x-ray diffraction (XRD) pattern of non-doped and Co-doped ZnO NRs with the preferred orientation of ZnO NRs in the (002) plane possess polycrystalline hexagonal wurtzite structure with the space group P63mc. Optical absorbance indicates the Co 0.08 at.% doped ZnO NRs have stronger and blueshift bandgap energy (3.104 ev). The room temperature photoluminescence (PL) spectra of ZnO NRs exhibited excitonicrelates ultraviolet (UV) and defect-related green band (GB) emissions. By calculating the UV/GB intensity, the Co 0.08 at.% is the proper atomic percentage to have fewer intrinsic defects. We predict that Co-doped ZnO NRs induce a blueshift of near band edge (NBE) emission due to the Burstein-Moss effect. Meanwhile, the redshift of NBE emission is attributed to the modification of the lattice dimensions and exchange energy.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.43-51
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• 2023

In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.576-581
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• 2023

The Ga₂O₃ thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga₂O₃ thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga₂O₃ thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga₂O₃ treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga₂O₃ represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga₂O₃ can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga₂O₃ can be applied to various devices by controlling not only temperature but process time.