Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Effect of Crystallographic and Optical Properties Under Rapid Thermal Annealing Conditions on Amorphous Ga2O3 Deposited Using RF Sputtering System

RF 스퍼터링 시스템을 이용하여 증착한 비정질 Ga2O3 박막의 급속 열처리 조건에 따른 결정성과 광학적 특성 변화

  • Hyungmin Kim (Department of Electronic Engineering, Gachon University) ;
  • Sangbin Park (Department of Electronic Engineering, Gachon University) ;
  • Jeongsoo Hong (Department of Electronic Engineering, Gachon University) ;
  • Kyunghwan Kim (Department of Electronic Engineering, Gachon University)
  • Received : 2023.07.10
  • Accepted : 2023.08.14
  • Published : 2023.11.01
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Abstract

The Ga2O3 thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga2O3 thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga2O3 thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga2O3 treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga2O3 represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga2O3 can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga2O3 can be applied to various devices by controlling not only temperature but process time.

Keywords

Acknowledgement

이 연구는 2023년도 산업통상자원부 및 산업기술평가관리원(KEIT) 연구비 지원(RS-2023-00227306) 및 2022년도 정부(산업통상자원부)의 재원으로 한국산업기술진흥원의 지원을 받아 수행된 연구임(P0012451, 2022년 산업혁신인재성장지원사업).

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