• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Current Applied Physics
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• v.18 no.12
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• pp.1583-1591
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• 2018

We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.8
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• pp.15-20
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• 2013

In narrowband communication systems operating in VHF and UHF bands, the performance degradation due to a frequency offset is inevitable. In this paper, we propose a frequency offset reduction scheme using the dual-band FSK modulation for narrowband communications. The proposed scheme not only offer a relatively reliable performance under a severe frequency offsets, but also can obtain a frequency diversity gain in Rayleigh fading channel.

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.339-345
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• 1993

계면의 원자구조와 전자특성간의 상관성을 연구하기 위하여 GaAs-Ge(AlAs) 이종접합에서 전자의 국소상태밀도(LDOS)를 계산하였다. 본 연구에서는 tight-binding recursion 방법을 기초로 하여 계면의 국소상태밀도로부터 band-offsets, 계면형성에너지, 계면결합의 bond order 등을 연구하는 보다 편리한 방법을 제시하였다.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.58-61
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• 2002

Photoluminescence up-conversion in semiconductor heterostructures is a phenomenon in which luminescence occurs at energies higher than that of the excitation photons. It has been observed in many semiconductor heterostructure systems, including InP/AnALAs, CdTe/CdMgTe, GaAs/ordered-(Al)GalnP, GaAs/AIGaAs, and InAs/GaAs. In this wort, GaAs/AIGaAs heterostructures are used as a model system to study the mechanism of the up-conversion process. This system is ideal for testing different models because the band offsets are quite well documented. Different heterostructures are designed to study the effect of disorder on the up-converted luminescence efficiency. In order to study the roles of different types of carriers, the effect of doping was investigated. It was found that the up-converted luminescence is significantly enhanced by p-type doping of the higher-band-gap material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.376-379
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• 2016

In this paper, the efficiency improvement of the heterojunction with intrinsic thin layer (HIT) solar cells is obtained by optimization process of p-type a-SiC:H as emitter. The optoelectronic of p-type a-SiC:H layers including the optical band-gap and conductivity under the methane gas content variation is conducted in detail. A significant increase in the Jsc by $1mA/cm^2$ and Voc by 30 mV are attributed to enhanced photon-absorption due to broader band-gap of p-a-SiC:H and reduced band-offsets at p-side interface, respectively of HIT solar cells.

• The KIPS Transactions:PartC
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• v.19C no.4
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• pp.239-246
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• 2012

The function of location estimation in WPAN has been studied and specified on the ultra wide band optionally. But the devices based on CSS(Chirp Spread Spectrum) specification has been used widely in the market because of its functionality, cheapness and support of development. As the CSS device uses 2.4GHz for a carrier frequency and the sampling frequency is lower than that of the UWB, the resolution of a timestamp is very coarse. Then actually the error of a measured distance is very large about 30cm~1m at 10 m depart. And the location error in ($10m{\times}10m$) environment is known as about 1m~2m. So for some applications which require more accurate location information, it is very natural and important to develop a sophisticated post processing algorithm after distance measurements. In this paper, we have studied extended Kalman filter with the frequency offsets of anchor nodes, and proposed a novel algorithm frequency offset compensated extended Kalman filter. The frequency offsets are composed with a variable as a common frequency offset and constants as individual frequency offsets. The proposed algorithm shows that the accurate location estimation, less than 10cm distance error, with CSS WPAN nodes is possible practically.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.10C
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• pp.965-975
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• 2005

In this paper, we propose and evaluate joint carrier and sampling frequency offset estimation schemes based on the channel estimation sequences in PLCP (Physical Layer Convergence Procedure) preamble for the proper and effcient synchronization of the MB-OFDM WB (Multi-Band Orthogonal Frequency Division Multiplexing Ultra Wide Band) systems which have recently drawn explosive attention for future W-PAN (Wireless Personal Area Network) applications. In the joint estimation schemes, we first estimate the sampling frequency offset, and then estimate the carrier frequency offset using the estimated sampling frequency offset. Moreover, to improve the reliability of the estimated offset values, each process uses a combination scheme based on weighting factors. Simulation results using IEEE 802.15 Task Group 3a UWB channel models reveal that the estimation scheme using the simple weighting factors based on easily-measurable received signal power of each sub-channel shows favorably comparable performance to the ideal scheme using the weighting factors based on the perfectly-estimated frequency response of the channel.

• ETRI Journal
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• v.28 no.6
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• pp.770-776
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• 2006

This paper presents a hyperspectral imaging technique based on laser-induced fluorescence for non-invasive detection of tumorous tissue on mouse skin. Hyperspectral imaging sensors collect image data in a number of narrow, adjacent spectral bands. Such high-resolution measurement of spectral information reveals contiguous emission spectra at each image pixel useful for the characterization of constituent materials. The hyperspectral image data used in this study are fluorescence images of mouse skin consisting of 21 spectral bands in the visible spectrum of the wavelengths ranging from 440 nm to 640 nm. Fluorescence signal is measured with the use of laser excitation at 337 nm. An acousto-optic tunable filter (AOTF) is used to capture images at 10 nm intervals. All spectral band images are spatially registered with the reference band image at 490 nm to obtain exact pixel correspondences by compensating the spatial offsets caused by the refraction differences in AOTF at different wavelengths during the image capture procedure. The unique fluorescence spectral signatures demonstrate a good separation to differentiate malignant tumors from normal tissues for rapid detection of skin cancers without biopsy.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.1
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• pp.115-121
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• 2012

In this paper, the design and fabrication of slot array in the broad wall of the waveguide for Ka-band monopulse radar are discussed. The aperture distributions are designed for the desired antenna gain, beamwidth and Side-lobe Level(SLL), and then slot parameters, such as lengths and offsets, are obtained for corresponding to each slot admittance in the equivalent circuit by using Elliot's array synthesis procedure. MWS-CST simulation shows the return loss below -10 dB, antenna gain above 32 dBi, 3 dB beamwidth of 3.7 degree and SLL of -20 dB. In order to demonstrate the expected results, the designed antenna is fabricated and measured.